DE1764682A1 - Photoleitendes Target bzw. photoleitender Bildschirm - Google Patents
Photoleitendes Target bzw. photoleitender BildschirmInfo
- Publication number
- DE1764682A1 DE1764682A1 DE19681764682 DE1764682A DE1764682A1 DE 1764682 A1 DE1764682 A1 DE 1764682A1 DE 19681764682 DE19681764682 DE 19681764682 DE 1764682 A DE1764682 A DE 1764682A DE 1764682 A1 DE1764682 A1 DE 1764682A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- photoconductive
- target
- thickness
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 16
- 229940007424 antimony trisulfide Drugs 0.000 claims description 4
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 description 7
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 206010035148 Plague Diseases 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 241000607479 Yersinia pestis Species 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 241000551547 Dione <red algae> Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- NXLOLUFNDSBYTP-UHFFFAOYSA-N retene Chemical compound C1=CC=C2C3=CC=C(C(C)C)C=C3C=CC2=C1C NXLOLUFNDSBYTP-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- -1 viourafc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4564067 | 1967-07-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1764682A1 true DE1764682A1 (de) | 1971-03-04 |
Family
ID=12724950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681764682 Pending DE1764682A1 (de) | 1967-07-17 | 1968-07-16 | Photoleitendes Target bzw. photoleitender Bildschirm |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US3571646A (enrdf_load_stackoverflow) |
| DE (1) | DE1764682A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1582561A (enrdf_load_stackoverflow) |
| GB (1) | GB1198570A (enrdf_load_stackoverflow) |
| NL (1) | NL157745B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2254605A1 (de) * | 1971-11-09 | 1973-05-24 | Matsushita Electric Ind Co Ltd | Lichtelektrisches wandlerelement |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4830193B1 (enrdf_load_stackoverflow) * | 1970-08-17 | 1973-09-18 | ||
| US3783324A (en) * | 1972-09-11 | 1974-01-01 | Rca Corp | Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface |
| US3872344A (en) * | 1972-09-15 | 1975-03-18 | Tokyo Shibaura Electric Co | Image pickup tube |
| US3985918A (en) * | 1972-10-12 | 1976-10-12 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing a target for an image pickup tube |
| JPS5246772B2 (enrdf_load_stackoverflow) * | 1973-05-21 | 1977-11-28 | ||
| US3870921A (en) * | 1973-09-24 | 1975-03-11 | Xerox Corp | Image intensifier tube with improved photoemitter surface |
| JPS60140636A (ja) | 1983-12-28 | 1985-07-25 | Toshiba Corp | 撮像管の光導電タ−ゲツトおよびその製造方法 |
| US4929867A (en) * | 1988-06-03 | 1990-05-29 | Varian Associates, Inc. | Two stage light converting vacuum tube |
| RU2145454C1 (ru) * | 1998-04-14 | 2000-02-10 | Государственное малое межотраслевое предприятие "Диаконт" | Мишень видикона |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2997630A (en) * | 1956-08-30 | 1961-08-22 | Itt | Holding switch |
| US3315108A (en) * | 1963-12-17 | 1967-04-18 | Rca Corp | High lag, high sensitivity target having solid antimony oxysulphide and porous antimony trisulphide layers |
| GB1086603A (en) * | 1966-03-08 | 1967-10-11 | Gen Precision Inc | Photoconductive thin film cell responding to a broad spectral range of light input |
| US3346755A (en) * | 1966-03-31 | 1967-10-10 | Rca Corp | Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials |
| US3403278A (en) * | 1967-02-07 | 1968-09-24 | Bell Telephone Labor Inc | Camera tube target including n-type semiconductor having higher concentration of deep donors than shallow donors |
-
1968
- 1968-07-15 US US744743A patent/US3571646A/en not_active Expired - Lifetime
- 1968-07-16 GB GB33796/68A patent/GB1198570A/en not_active Expired
- 1968-07-16 DE DE19681764682 patent/DE1764682A1/de active Pending
- 1968-07-16 NL NL6810017.A patent/NL157745B/xx not_active IP Right Cessation
- 1968-07-17 FR FR1582561D patent/FR1582561A/fr not_active Expired
-
1973
- 1973-03-21 US US34348973 patent/USRE28156E/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2254605A1 (de) * | 1971-11-09 | 1973-05-24 | Matsushita Electric Ind Co Ltd | Lichtelektrisches wandlerelement |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1198570A (en) | 1970-07-15 |
| FR1582561A (enrdf_load_stackoverflow) | 1969-10-03 |
| NL157745B (nl) | 1978-08-15 |
| USRE28156E (en) | 1974-09-10 |
| NL6810017A (enrdf_load_stackoverflow) | 1969-01-21 |
| US3571646A (en) | 1971-03-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E771 | Valid patent as to the heymanns-index 1977, willingness to grant licences |