DE1646789C3 - Zweischichtkörper, bestehend aus einem einkristallinen Substrat und einem heteroepitaktisch aufgewachsenen Film, und Verfahren zu dessen Herstellung - Google Patents
Zweischichtkörper, bestehend aus einem einkristallinen Substrat und einem heteroepitaktisch aufgewachsenen Film, und Verfahren zu dessen HerstellungInfo
- Publication number
- DE1646789C3 DE1646789C3 DE1646789A DE1646789A DE1646789C3 DE 1646789 C3 DE1646789 C3 DE 1646789C3 DE 1646789 A DE1646789 A DE 1646789A DE 1646789 A DE1646789 A DE 1646789A DE 1646789 C3 DE1646789 C3 DE 1646789C3
- Authority
- DE
- Germany
- Prior art keywords
- garnet
- substrate
- grown
- layer
- layer body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000002223 garnet Substances 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 27
- 239000000395 magnesium oxide Substances 0.000 claims description 19
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 150000004820 halides Chemical class 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 229910001507 metal halide Inorganic materials 0.000 claims description 4
- 150000005309 metal halides Chemical class 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 239000003517 fume Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 41
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 238000003776 cleavage reaction Methods 0.000 description 4
- 230000005291 magnetic effect Effects 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052566 spinel group Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- -1 chlorides Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2675—Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Iron (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48993065A | 1965-09-24 | 1965-09-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1646789A1 DE1646789A1 (de) | 1971-09-16 |
| DE1646789B2 DE1646789B2 (de) | 1975-02-13 |
| DE1646789C3 true DE1646789C3 (de) | 1975-09-25 |
Family
ID=23945872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1646789A Expired DE1646789C3 (de) | 1965-09-24 | 1966-09-21 | Zweischichtkörper, bestehend aus einem einkristallinen Substrat und einem heteroepitaktisch aufgewachsenen Film, und Verfahren zu dessen Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3429740A (enrdf_load_stackoverflow) |
| DE (1) | DE1646789C3 (enrdf_load_stackoverflow) |
| GB (1) | GB1137950A (enrdf_load_stackoverflow) |
| NL (1) | NL6613458A (enrdf_load_stackoverflow) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3486937A (en) * | 1967-03-24 | 1969-12-30 | Perkin Elmer Corp | Method of growing a single crystal film of a ferrimagnetic material |
| US3617381A (en) * | 1968-07-30 | 1971-11-02 | Rca Corp | Method of epitaxially growing single crystal films of metal oxides |
| US3982049A (en) * | 1969-06-16 | 1976-09-21 | Rockwell International Corporation | Method for producing single crystal films |
| US3615168A (en) * | 1969-08-12 | 1971-10-26 | Bell Telephone Labor Inc | Growth of crystalline rare earth iron garnets and orthoferrites by vapor transport |
| US3607390A (en) * | 1969-09-29 | 1971-09-21 | Ibm | Single crystal ferrimagnetic films |
| US3645787A (en) * | 1970-01-06 | 1972-02-29 | North American Rockwell | Method of forming multiple layer structures including magnetic domains |
| US3946124A (en) * | 1970-03-04 | 1976-03-23 | Rockwell International Corporation | Method of forming a composite structure |
| US3645788A (en) * | 1970-03-04 | 1972-02-29 | North American Rockwell | Method of forming multiple-layer structures including magnetic domains |
| US3864165A (en) * | 1970-09-08 | 1975-02-04 | Westinghouse Electric Corp | Fabrication of ferrite film for microwave applications |
| US3837911A (en) * | 1971-04-12 | 1974-09-24 | Bell Telephone Labor Inc | Magnetic devices utilizing garnet epitaxial materials and method of production |
| US3753814A (en) * | 1970-12-28 | 1973-08-21 | North American Rockwell | Confinement of bubble domains in film-substrate structures |
| FR2138410B1 (enrdf_load_stackoverflow) * | 1971-05-25 | 1973-05-25 | Commissariat Energie Atomique | |
| US4001793A (en) * | 1973-07-02 | 1977-01-04 | Rockwell International Corporation | Magnetic bubble domain composite with hard bubble suppression |
| NL7606482A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
| JPS5981570A (ja) * | 1982-11-01 | 1984-05-11 | Hitachi Ltd | 光方式磁界測定装置 |
| CN107034517A (zh) * | 2011-06-06 | 2017-08-11 | 天工方案公司 | 改性的石榴石结构和射频系统 |
| US9552917B2 (en) * | 2013-09-20 | 2017-01-24 | Skyworks Solutions, Inc. | Materials, devices and methods related to below-resonance radio-frequency circulators and isolators |
| US9829728B2 (en) | 2015-11-19 | 2017-11-28 | Massachusetts Institute Of Technology | Method for forming magneto-optical films for integrated photonic devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3131082A (en) * | 1962-02-01 | 1964-04-28 | Gen Electric | Rare earth-iron garnet preparation |
-
1965
- 1965-09-24 US US489930A patent/US3429740A/en not_active Expired - Lifetime
-
1966
- 1966-09-20 GB GB42012/66A patent/GB1137950A/en not_active Expired
- 1966-09-21 DE DE1646789A patent/DE1646789C3/de not_active Expired
- 1966-09-23 NL NL6613458A patent/NL6613458A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3429740A (en) | 1969-02-25 |
| DE1646789B2 (de) | 1975-02-13 |
| GB1137950A (en) | 1968-12-27 |
| DE1646789A1 (de) | 1971-09-16 |
| NL6613458A (enrdf_load_stackoverflow) | 1967-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |