DE1614576A1 - Photothyristor und Verfahren zu seiner Herstellung - Google Patents
Photothyristor und Verfahren zu seiner HerstellungInfo
- Publication number
- DE1614576A1 DE1614576A1 DE19671614576 DE1614576A DE1614576A1 DE 1614576 A1 DE1614576 A1 DE 1614576A1 DE 19671614576 DE19671614576 DE 19671614576 DE 1614576 A DE1614576 A DE 1614576A DE 1614576 A1 DE1614576 A1 DE 1614576A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- photothyristor
- foil
- alloy
- contact electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000001953 recrystallisation Methods 0.000 claims description 13
- 239000011888 foil Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims 1
- 238000005275 alloying Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 208000031872 Body Remains Diseases 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- WXNIGGHOYIUIFC-UHFFFAOYSA-N [Si].[Sb].[Au] Chemical compound [Si].[Sb].[Au] WXNIGGHOYIUIFC-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Light Receiving Elements (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0111215 | 1967-08-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1614576A1 true DE1614576A1 (de) | 1970-10-29 |
Family
ID=7530816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19671614576 Pending DE1614576A1 (de) | 1967-08-05 | 1967-08-05 | Photothyristor und Verfahren zu seiner Herstellung |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT274074B (forum.php) |
| BE (1) | BE718832A (forum.php) |
| CH (1) | CH473476A (forum.php) |
| DE (1) | DE1614576A1 (forum.php) |
| FR (1) | FR1578325A (forum.php) |
| GB (1) | GB1236652A (forum.php) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
-
1967
- 1967-08-05 DE DE19671614576 patent/DE1614576A1/de active Pending
-
1968
- 1968-04-17 AT AT373368A patent/AT274074B/de active
- 1968-04-26 CH CH630568A patent/CH473476A/de not_active IP Right Cessation
- 1968-07-31 BE BE718832D patent/BE718832A/xx unknown
- 1968-08-01 GB GB36862/68A patent/GB1236652A/en not_active Expired
- 1968-08-02 FR FR1578325D patent/FR1578325A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH473476A (de) | 1969-05-31 |
| BE718832A (forum.php) | 1969-01-31 |
| GB1236652A (en) | 1971-06-23 |
| FR1578325A (forum.php) | 1969-08-14 |
| AT274074B (de) | 1969-09-10 |
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