DE1614244A1 - Integrierte Schaltungen - Google Patents

Integrierte Schaltungen

Info

Publication number
DE1614244A1
DE1614244A1 DE19671614244 DE1614244A DE1614244A1 DE 1614244 A1 DE1614244 A1 DE 1614244A1 DE 19671614244 DE19671614244 DE 19671614244 DE 1614244 A DE1614244 A DE 1614244A DE 1614244 A1 DE1614244 A1 DE 1614244A1
Authority
DE
Germany
Prior art keywords
zone
pnpn
elements
semiconductor
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19671614244
Other languages
German (de)
English (en)
Inventor
Emond Jean Claude Josep Edmond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1614244A1 publication Critical patent/DE1614244A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19671614244 1966-05-06 1967-04-29 Integrierte Schaltungen Pending DE1614244A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6606164A NL6606164A (cg-RX-API-DMAC10.html) 1966-05-06 1966-05-06

Publications (1)

Publication Number Publication Date
DE1614244A1 true DE1614244A1 (de) 1970-06-25

Family

ID=19796515

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19671614244 Pending DE1614244A1 (de) 1966-05-06 1967-04-29 Integrierte Schaltungen

Country Status (9)

Country Link
US (1) US3488528A (cg-RX-API-DMAC10.html)
AT (1) AT305372B (cg-RX-API-DMAC10.html)
BE (1) BE698094A (cg-RX-API-DMAC10.html)
CH (1) CH475654A (cg-RX-API-DMAC10.html)
DE (1) DE1614244A1 (cg-RX-API-DMAC10.html)
ES (1) ES340110A1 (cg-RX-API-DMAC10.html)
GB (1) GB1191161A (cg-RX-API-DMAC10.html)
NL (1) NL6606164A (cg-RX-API-DMAC10.html)
SE (1) SE355439B (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157151A (ja) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp 半導体集積回路装置
US4896340A (en) * 1985-11-01 1990-01-23 Hughes Aircraft Company Partial direct injection for signal processing system
DE3706251A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
GB2439862A (en) 2005-03-01 2008-01-09 X2Y Attenuators Llc Conditioner with coplanar conductors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US3115581A (en) * 1959-05-06 1963-12-24 Texas Instruments Inc Miniature semiconductor integrated circuit
US3230388A (en) * 1960-09-17 1966-01-18 Emi Ltd Integrated structure forming shift register from reactively coupled active elements
US3173028A (en) * 1962-02-13 1965-03-09 Westinghouse Electric Corp Solid state bistable multivibrator
US3200266A (en) * 1963-03-22 1965-08-10 Abraham George Multistable circuit employing plurality of parallel-connected semiconductor devices each having more than one pn junction

Also Published As

Publication number Publication date
ES340110A1 (es) 1968-06-01
NL6606164A (cg-RX-API-DMAC10.html) 1967-11-07
US3488528A (en) 1970-01-06
BE698094A (cg-RX-API-DMAC10.html) 1967-11-06
CH475654A (de) 1969-07-15
GB1191161A (en) 1970-05-06
AT305372B (de) 1973-02-26
SE355439B (cg-RX-API-DMAC10.html) 1973-04-16

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