CH475654A - Elektronische Schaltungsanordnung mit einem Halbleiterkörper mit integrierten Schaltelementen - Google Patents

Elektronische Schaltungsanordnung mit einem Halbleiterkörper mit integrierten Schaltelementen

Info

Publication number
CH475654A
CH475654A CH641867A CH641867A CH475654A CH 475654 A CH475654 A CH 475654A CH 641867 A CH641867 A CH 641867A CH 641867 A CH641867 A CH 641867A CH 475654 A CH475654 A CH 475654A
Authority
CH
Switzerland
Prior art keywords
electronic circuit
switching elements
circuit arrangement
semiconductor body
integrated switching
Prior art date
Application number
CH641867A
Other languages
English (en)
Inventor
Edmond Edmond Jean Claud Oscar
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH475654A publication Critical patent/CH475654A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
CH641867A 1966-05-06 1967-05-05 Elektronische Schaltungsanordnung mit einem Halbleiterkörper mit integrierten Schaltelementen CH475654A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6606164A NL6606164A (de) 1966-05-06 1966-05-06

Publications (1)

Publication Number Publication Date
CH475654A true CH475654A (de) 1969-07-15

Family

ID=19796515

Family Applications (1)

Application Number Title Priority Date Filing Date
CH641867A CH475654A (de) 1966-05-06 1967-05-05 Elektronische Schaltungsanordnung mit einem Halbleiterkörper mit integrierten Schaltelementen

Country Status (9)

Country Link
US (1) US3488528A (de)
AT (1) AT305372B (de)
BE (1) BE698094A (de)
CH (1) CH475654A (de)
DE (1) DE1614244A1 (de)
ES (1) ES340110A1 (de)
GB (1) GB1191161A (de)
NL (1) NL6606164A (de)
SE (1) SE355439B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157151A (ja) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp 半導体集積回路装置
US4896340A (en) * 1985-11-01 1990-01-23 Hughes Aircraft Company Partial direct injection for signal processing system
DE3706251A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7782587B2 (en) 2005-03-01 2010-08-24 X2Y Attenuators, Llc Internally overlapped conditioners

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US3115581A (en) * 1959-05-06 1963-12-24 Texas Instruments Inc Miniature semiconductor integrated circuit
US3230388A (en) * 1960-09-17 1966-01-18 Emi Ltd Integrated structure forming shift register from reactively coupled active elements
US3173028A (en) * 1962-02-13 1965-03-09 Westinghouse Electric Corp Solid state bistable multivibrator
US3200266A (en) * 1963-03-22 1965-08-10 Abraham George Multistable circuit employing plurality of parallel-connected semiconductor devices each having more than one pn junction

Also Published As

Publication number Publication date
SE355439B (de) 1973-04-16
AT305372B (de) 1973-02-26
BE698094A (de) 1967-11-06
ES340110A1 (es) 1968-06-01
GB1191161A (en) 1970-05-06
DE1614244A1 (de) 1970-06-25
US3488528A (en) 1970-01-06
NL6606164A (de) 1967-11-07

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Legal Events

Date Code Title Description
PL Patent ceased