AT298618B - Symmetrische elektrische Schalteinrichtung mit einem steuerbaren Halbleiterbauelement - Google Patents

Symmetrische elektrische Schalteinrichtung mit einem steuerbaren Halbleiterbauelement

Info

Publication number
AT298618B
AT298618B AT745167A AT745167A AT298618B AT 298618 B AT298618 B AT 298618B AT 745167 A AT745167 A AT 745167A AT 745167 A AT745167 A AT 745167A AT 298618 B AT298618 B AT 298618B
Authority
AT
Austria
Prior art keywords
switching device
semiconductor component
electrical switching
controllable semiconductor
symmetrical electrical
Prior art date
Application number
AT745167A
Other languages
English (en)
Inventor
Stanford Robert Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of AT298618B publication Critical patent/AT298618B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Memories (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
AT745167A 1966-09-06 1967-08-14 Symmetrische elektrische Schalteinrichtung mit einem steuerbaren Halbleiterbauelement AT298618B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US577397A US3336486A (en) 1966-09-06 1966-09-06 Control system having multiple electrode current controlling device

Publications (1)

Publication Number Publication Date
AT298618B true AT298618B (de) 1972-05-10

Family

ID=24308539

Family Applications (1)

Application Number Title Priority Date Filing Date
AT745167A AT298618B (de) 1966-09-06 1967-08-14 Symmetrische elektrische Schalteinrichtung mit einem steuerbaren Halbleiterbauelement

Country Status (11)

Country Link
US (1) US3336486A (de)
AT (1) AT298618B (de)
BE (1) BE702597A (de)
CH (2) CH514250A (de)
DE (1) DE1589739A1 (de)
ES (1) ES344041A1 (de)
FR (1) FR1534253A (de)
GB (1) GB1204702A (de)
IL (1) IL28454A (de)
NL (1) NL6711109A (de)
SE (1) SE360780B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
EP0058336B1 (de) * 1981-02-13 1987-08-19 General Electric Company ZnO-Varistor mit vermindertem Randleckstrom
US6967344B2 (en) * 2003-03-10 2005-11-22 Energy Conversion Devices, Inc. Multi-terminal chalcogenide switching devices
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
DE102004037450B4 (de) * 2004-08-02 2009-04-16 Qimonda Ag Verfahren zum Betrieb eines Schalt-Bauelements

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE436972A (de) * 1938-11-15
DE1080696B (de) * 1956-12-10 1960-04-28 Stanislas Teszner Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US2987959A (en) * 1957-05-28 1961-06-13 Siemens Ag Device for controlling electromagnetic radiation
NL265382A (de) * 1960-03-08
NL267831A (de) * 1960-08-17
NL282170A (de) * 1961-08-17
NL293447A (de) * 1962-05-31

Also Published As

Publication number Publication date
CH514250A (de) 1971-10-15
DE1589739A1 (de) 1970-09-10
SE360780B (de) 1973-10-01
ES344041A1 (es) 1968-09-16
CH509016A (de) 1971-06-15
GB1204702A (en) 1970-09-09
NL6711109A (de) 1968-03-07
BE702597A (de) 1968-01-15
IL28454A (en) 1971-06-23
FR1534253A (fr) 1968-07-26
US3336486A (en) 1967-08-15

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Legal Events

Date Code Title Description
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