ES344041A1 - Un dispositivo de control de corriente simetrico. - Google Patents
Un dispositivo de control de corriente simetrico.Info
- Publication number
- ES344041A1 ES344041A1 ES344041A ES344041A ES344041A1 ES 344041 A1 ES344041 A1 ES 344041A1 ES 344041 A ES344041 A ES 344041A ES 344041 A ES344041 A ES 344041A ES 344041 A1 ES344041 A1 ES 344041A1
- Authority
- ES
- Spain
- Prior art keywords
- switching device
- control electrode
- lead
- electrodes
- high resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- YRXWPCFZBSHSAU-UHFFFAOYSA-N [Ag].[Ag].[Te] Chemical class [Ag].[Ag].[Te] YRXWPCFZBSHSAU-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000011133 lead Substances 0.000 abstract 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract 1
- 150000002642 lithium compounds Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- RHDUVDHGVHBHCL-UHFFFAOYSA-N niobium tantalum Chemical compound [Nb].[Ta] RHDUVDHGVHBHCL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- -1 selenium tellurium hydrogen Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- TUTGPIFPKMTGAP-UHFFFAOYSA-N thallium vanadium Chemical compound [V].[Tl] TUTGPIFPKMTGAP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Memories (AREA)
- Light Receiving Elements (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US577397A US3336486A (en) | 1966-09-06 | 1966-09-06 | Control system having multiple electrode current controlling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES344041A1 true ES344041A1 (es) | 1968-09-16 |
Family
ID=24308539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES344041A Expired ES344041A1 (es) | 1966-09-06 | 1967-08-11 | Un dispositivo de control de corriente simetrico. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3336486A (es) |
| AT (1) | AT298618B (es) |
| BE (1) | BE702597A (es) |
| CH (2) | CH514250A (es) |
| DE (1) | DE1589739A1 (es) |
| ES (1) | ES344041A1 (es) |
| FR (1) | FR1534253A (es) |
| GB (1) | GB1204702A (es) |
| IL (1) | IL28454A (es) |
| NL (1) | NL6711109A (es) |
| SE (1) | SE360780B (es) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3748501A (en) * | 1971-04-30 | 1973-07-24 | Energy Conversion Devices Inc | Multi-terminal amorphous electronic control device |
| DE3277042D1 (en) * | 1981-02-13 | 1987-09-24 | Gen Electric | Zinc oxide varistor with reduced fringe current effects |
| US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
| US7227170B2 (en) * | 2003-03-10 | 2007-06-05 | Energy Conversion Devices, Inc. | Multiple bit chalcogenide storage device |
| DE102004037450B4 (de) * | 2004-08-02 | 2009-04-16 | Qimonda Ag | Verfahren zum Betrieb eines Schalt-Bauelements |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE436972A (es) * | 1938-11-15 | |||
| US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
| US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
| US2987959A (en) * | 1957-05-28 | 1961-06-13 | Siemens Ag | Device for controlling electromagnetic radiation |
| NL265382A (es) * | 1960-03-08 | |||
| NL267831A (es) * | 1960-08-17 | |||
| NL282170A (es) * | 1961-08-17 | |||
| NL293447A (es) * | 1962-05-31 |
-
1966
- 1966-09-06 US US577397A patent/US3336486A/en not_active Expired - Lifetime
-
1967
- 1967-08-04 IL IL28454A patent/IL28454A/xx unknown
- 1967-08-09 DE DE19671589739 patent/DE1589739A1/de active Pending
- 1967-08-11 BE BE702597D patent/BE702597A/xx unknown
- 1967-08-11 ES ES344041A patent/ES344041A1/es not_active Expired
- 1967-08-11 SE SE11368/67A patent/SE360780B/xx unknown
- 1967-08-11 FR FR117755A patent/FR1534253A/fr not_active Expired
- 1967-08-11 NL NL6711109A patent/NL6711109A/xx unknown
- 1967-08-14 CH CH1139367A patent/CH514250A/de not_active IP Right Cessation
- 1967-08-14 CH CH34370A patent/CH509016A/de not_active IP Right Cessation
- 1967-08-14 AT AT745167A patent/AT298618B/de not_active IP Right Cessation
- 1967-09-05 GB GB37014/67A patent/GB1204702A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IL28454A (en) | 1971-06-23 |
| NL6711109A (es) | 1968-03-07 |
| DE1589739A1 (de) | 1970-09-10 |
| CH514250A (de) | 1971-10-15 |
| CH509016A (de) | 1971-06-15 |
| AT298618B (de) | 1972-05-10 |
| US3336486A (en) | 1967-08-15 |
| SE360780B (es) | 1973-10-01 |
| GB1204702A (en) | 1970-09-09 |
| BE702597A (es) | 1968-01-15 |
| FR1534253A (fr) | 1968-07-26 |
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