DE1564320B2 - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- DE1564320B2 DE1564320B2 DE1966M0069302 DEM0069302A DE1564320B2 DE 1564320 B2 DE1564320 B2 DE 1564320B2 DE 1966M0069302 DE1966M0069302 DE 1966M0069302 DE M0069302 A DEM0069302 A DE M0069302A DE 1564320 B2 DE1564320 B2 DE 1564320B2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- semiconductor component
- semiconductor material
- component
- negative resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 3
- 230000002452 interceptive effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 5
- 239000007924 injection Substances 0.000 claims 5
- 230000015556 catabolic process Effects 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 241000881711 Acipenser sturio Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 nium Chemical compound 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2550765A JPS494592B1 (enrdf_load_stackoverflow) | 1965-04-27 | 1965-04-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1564320A1 DE1564320A1 (de) | 1969-10-09 |
| DE1564320B2 true DE1564320B2 (de) | 1973-11-08 |
Family
ID=12167965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1966M0069302 Granted DE1564320B2 (de) | 1965-04-27 | 1966-04-27 | Halbleiterbauelement |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS494592B1 (enrdf_load_stackoverflow) |
| DE (1) | DE1564320B2 (enrdf_load_stackoverflow) |
| GB (1) | GB1146609A (enrdf_load_stackoverflow) |
| NL (1) | NL6605640A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3041818A1 (de) * | 1980-11-06 | 1982-06-09 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement |
-
1965
- 1965-04-27 JP JP2550765A patent/JPS494592B1/ja active Pending
-
1966
- 1966-04-20 GB GB1727866A patent/GB1146609A/en not_active Expired
- 1966-04-27 NL NL6605640A patent/NL6605640A/xx unknown
- 1966-04-27 DE DE1966M0069302 patent/DE1564320B2/de active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3041818A1 (de) * | 1980-11-06 | 1982-06-09 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6605640A (enrdf_load_stackoverflow) | 1966-10-28 |
| GB1146609A (en) | 1969-03-26 |
| DE1564320A1 (de) | 1969-10-09 |
| JPS494592B1 (enrdf_load_stackoverflow) | 1974-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| EHJ | Ceased/non-payment of the annual fee |