DE1537057C3 - - Google Patents

Info

Publication number

DE1537057C3

DE1537057C3 DE19671537057 DE1537057A DE1537057C3 DE 1537057 C3 DE1537057 C3 DE 1537057C3 DE 19671537057 DE19671537057 DE 19671537057 DE 1537057 A DE1537057 A DE 1537057A DE 1537057 C3 DE1537057 C3 DE 1537057C3

Authority

DE

Germany

Prior art keywords

mos

arrangement according

contacts

metal

semiconductor layer

Prior art date

1966-08-10

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
• Global Dossier
• DPMA
• Discuss

• 239000004065 semiconductor Substances 0.000 claims description 25
• 239000002184 metal Substances 0.000 claims description 22
• 239000002800 charge carrier Substances 0.000 claims description 8
• 239000011159 matrix material Substances 0.000 claims description 7
• 238000009826 distribution Methods 0.000 claims description 4
• 230000001427 coherent effect Effects 0.000 claims 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
• 229910052710 silicon Inorganic materials 0.000 description 5
• 239000010703 silicon Substances 0.000 description 5
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
• 238000010586 diagram Methods 0.000 description 3
• 230000003287 optical effect Effects 0.000 description 3
• 238000005516 engineering process Methods 0.000 description 2
• 230000004907 flux Effects 0.000 description 2
• 239000012535 impurity Substances 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• 238000001465 metallisation Methods 0.000 description 2
• 238000000034 method Methods 0.000 description 2
• 230000005855 radiation Effects 0.000 description 2
• 239000000969 carrier Substances 0.000 description 1
• 239000012141 concentrate Substances 0.000 description 1
• 230000001419 dependent effect Effects 0.000 description 1
• 238000009792 diffusion process Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000010894 electron beam technology Methods 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 238000005286 illumination Methods 0.000 description 1
• 238000003780 insertion Methods 0.000 description 1
• 230000037431 insertion Effects 0.000 description 1
• 229910044991 metal oxide Inorganic materials 0.000 description 1
• 150000004706 metal oxides Chemical class 0.000 description 1
• 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 238000005070 sampling Methods 0.000 description 1
• 230000035945 sensitivity Effects 0.000 description 1
• 235000012239 silicon dioxide Nutrition 0.000 description 1
• 239000000377 silicon dioxide Substances 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1
• 230000004304 visual acuity Effects 0.000 description 1