DE1522525C3 - Verfahren zum Herstellen einer Photolackmaske - Google Patents
Verfahren zum Herstellen einer PhotolackmaskeInfo
- Publication number
- DE1522525C3 DE1522525C3 DE1522525A DE1522525A DE1522525C3 DE 1522525 C3 DE1522525 C3 DE 1522525C3 DE 1522525 A DE1522525 A DE 1522525A DE 1522525 A DE1522525 A DE 1522525A DE 1522525 C3 DE1522525 C3 DE 1522525C3
- Authority
- DE
- Germany
- Prior art keywords
- exposure
- photoresist layer
- movement
- pinhole
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000009467 reduction Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000010421 pencil drawing Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0100902 | 1965-12-06 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1522525A1 DE1522525A1 (de) | 1969-09-11 |
| DE1522525B2 DE1522525B2 (de) | 1974-06-06 |
| DE1522525C3 true DE1522525C3 (de) | 1975-01-16 |
Family
ID=7523360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1522525A Expired DE1522525C3 (de) | 1965-12-06 | 1965-12-06 | Verfahren zum Herstellen einer Photolackmaske |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3518083A (enExample) |
| AT (1) | AT263088B (enExample) |
| CH (1) | CH465243A (enExample) |
| DE (1) | DE1522525C3 (enExample) |
| FR (1) | FR1508408A (enExample) |
| GB (1) | GB1159570A (enExample) |
| NL (1) | NL6615154A (enExample) |
| SE (1) | SE348683B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946954B1 (enExample) * | 1970-12-25 | 1974-12-12 | ||
| NL7101522A (enExample) * | 1971-02-05 | 1972-08-08 | ||
| US3743842A (en) * | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
| DE2454750C3 (de) * | 1974-11-19 | 1982-03-18 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren und Anordnung zur Herstellung von Bildmustern für Masken integrierter Schaltkreise mittels aberrationsfreier Bildpunkte von Punkthologrammen |
| US4573791A (en) * | 1979-04-03 | 1986-03-04 | Optimetrix Corporation | Step-and-repeat projection alignment and exposure system |
| EP0017759B1 (en) * | 1979-04-03 | 1985-09-04 | Eaton-Optimetrix Inc. | Improved step-and-repeat projection alignment and exposure system |
| US4473293A (en) * | 1979-04-03 | 1984-09-25 | Optimetrix Corporation | Step-and-repeat projection alignment and exposure system |
| US4414749A (en) | 1979-07-02 | 1983-11-15 | Optimetrix Corporation | Alignment and exposure system with an indicium of an axis of motion of the system |
| US4452526A (en) * | 1980-02-29 | 1984-06-05 | Optimetrix Corporation | Step-and-repeat projection alignment and exposure system with auxiliary optical unit |
| US4597664A (en) * | 1980-02-29 | 1986-07-01 | Optimetrix Corporation | Step-and-repeat projection alignment and exposure system with auxiliary optical unit |
| US4532427A (en) * | 1982-03-29 | 1985-07-30 | Fusion Systems Corp. | Method and apparatus for performing deep UV photolithography |
| US4577958A (en) * | 1982-06-18 | 1986-03-25 | Eaton Optimetrix, Inc. | Bore-sighted step-and-repeat projection alignment and exposure system |
| US4577957A (en) * | 1983-01-07 | 1986-03-25 | Eaton-Optimetrix, Inc. | Bore-sighted step-and-repeat projection alignment and exposure system |
-
1965
- 1965-12-06 DE DE1522525A patent/DE1522525C3/de not_active Expired
-
1966
- 1966-10-26 NL NL6615154A patent/NL6615154A/xx unknown
- 1966-12-05 AT AT1122066A patent/AT263088B/de active
- 1966-12-05 GB GB54305/66A patent/GB1159570A/en not_active Expired
- 1966-12-05 FR FR86137A patent/FR1508408A/fr not_active Expired
- 1966-12-05 CH CH1739066A patent/CH465243A/de unknown
- 1966-12-06 US US599577A patent/US3518083A/en not_active Expired - Lifetime
- 1966-12-06 SE SE16720/66A patent/SE348683B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AT263088B (de) | 1968-07-10 |
| FR1508408A (fr) | 1968-01-05 |
| DE1522525B2 (de) | 1974-06-06 |
| DE1522525A1 (de) | 1969-09-11 |
| NL6615154A (enExample) | 1967-06-07 |
| CH465243A (de) | 1968-11-15 |
| GB1159570A (en) | 1969-07-30 |
| US3518083A (en) | 1970-06-30 |
| SE348683B (enExample) | 1972-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 |