DE1489192A1 - Transistor - Google Patents

Transistor

Info

Publication number
DE1489192A1
DE1489192A1 DE19641489192 DE1489192A DE1489192A1 DE 1489192 A1 DE1489192 A1 DE 1489192A1 DE 19641489192 DE19641489192 DE 19641489192 DE 1489192 A DE1489192 A DE 1489192A DE 1489192 A1 DE1489192 A1 DE 1489192A1
Authority
DE
Germany
Prior art keywords
zone
base
transistor
thinner
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19641489192
Other languages
German (de)
English (en)
Inventor
Beale Julian Robert Anthony
Beer Andrew Francis
Moulding Kenneth William
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1489192A1 publication Critical patent/DE1489192A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19641489192 1963-12-13 1964-12-10 Transistor Pending DE1489192A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB49355/63A GB1074287A (en) 1963-12-13 1963-12-13 Improvements in and relating to semiconductor devices
US418414A US3377526A (en) 1963-12-13 1964-12-15 Variable gain transistor structure employing base zones of various thicknesses and resistivities

Publications (1)

Publication Number Publication Date
DE1489192A1 true DE1489192A1 (de) 1969-06-04

Family

ID=26266465

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19641489192 Pending DE1489192A1 (de) 1963-12-13 1964-12-10 Transistor

Country Status (5)

Country Link
US (1) US3377526A (enExample)
CH (1) CH429951A (enExample)
DE (1) DE1489192A1 (enExample)
GB (1) GB1074287A (enExample)
NL (1) NL6414232A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
IT946150B (it) * 1971-12-15 1973-05-21 Ates Componenti Elettron Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL216979A (enExample) * 1956-05-18
US2910653A (en) * 1956-10-17 1959-10-27 Gen Electric Junction transistors and circuits therefor
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
US3246172A (en) * 1963-03-26 1966-04-12 Richard J Sanford Four-layer semiconductor switch with means to provide recombination centers
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating

Also Published As

Publication number Publication date
GB1074287A (en) 1967-07-05
CH429951A (de) 1967-02-15
US3377526A (en) 1968-04-09
NL6414232A (enExample) 1965-06-14

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