DE1464997B1 - Mehrstufige,rueckgekoppelte,integrierte Kaskaden- oder Hintereinanderschaltung von Duennschicht-Feldeffekttransistoren - Google Patents

Mehrstufige,rueckgekoppelte,integrierte Kaskaden- oder Hintereinanderschaltung von Duennschicht-Feldeffekttransistoren

Info

Publication number
DE1464997B1
DE1464997B1 DE19641464997D DE1464997DA DE1464997B1 DE 1464997 B1 DE1464997 B1 DE 1464997B1 DE 19641464997 D DE19641464997 D DE 19641464997D DE 1464997D A DE1464997D A DE 1464997DA DE 1464997 B1 DE1464997 B1 DE 1464997B1
Authority
DE
Germany
Prior art keywords
feedback
stage
gate electrode
field effect
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19641464997D
Other languages
German (de)
English (en)
Inventor
Dill Johann G
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE1464997B1 publication Critical patent/DE1464997B1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Thin Film Transistor (AREA)
DE19641464997D 1963-12-02 1964-09-01 Mehrstufige,rueckgekoppelte,integrierte Kaskaden- oder Hintereinanderschaltung von Duennschicht-Feldeffekttransistoren Pending DE1464997B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US327263A US3265981A (en) 1963-12-02 1963-12-02 Thin-film electrical networks with nonresistive feedback arrangement

Publications (1)

Publication Number Publication Date
DE1464997B1 true DE1464997B1 (de) 1970-03-19

Family

ID=23275819

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19641464997D Pending DE1464997B1 (de) 1963-12-02 1964-09-01 Mehrstufige,rueckgekoppelte,integrierte Kaskaden- oder Hintereinanderschaltung von Duennschicht-Feldeffekttransistoren

Country Status (4)

Country Link
US (1) US3265981A (enExample)
DE (1) DE1464997B1 (enExample)
GB (1) GB1069924A (enExample)
SE (1) SE311935B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2159592A1 (de) * 1971-12-01 1973-06-07 Heinz Prof Dr Rer Nat Beneking Halbleiteranordnung

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378783A (en) * 1965-12-13 1968-04-16 Rca Corp Optimized digital amplifier utilizing insulated-gate field-effect transistors
US3405368A (en) * 1965-12-30 1968-10-08 Navy Usa Band-pass amplifier using field effect transistors
US3484709A (en) * 1966-06-13 1969-12-16 Gates Radio Co Solid state audio driver circuit
US3440352A (en) * 1966-09-09 1969-04-22 Bell Telephone Labor Inc Piezoresistance element microphone circuit
FR2259486B1 (enExample) * 1974-01-25 1978-03-31 Commissariat Energie Atomique
US4059811A (en) * 1976-12-20 1977-11-22 International Business Machines Corporation Integrated circuit amplifier
JPS5713777A (en) * 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002090A (en) * 1958-08-27 1961-09-26 Hazeltine Research Inc Automatic-gain-control system
US3208002A (en) * 1959-09-18 1965-09-21 Texas Instruments Inc Semiconductor integrated circuit device using field-effect transistors
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
NL264275A (enExample) * 1960-05-02
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor
US3082380A (en) * 1961-07-13 1963-03-19 Sonotone Corp Transistor amplifier stage with high input impedance
US3210677A (en) * 1962-05-28 1965-10-05 Westinghouse Electric Corp Unipolar-bipolar semiconductor amplifier
BE632998A (enExample) * 1962-05-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2159592A1 (de) * 1971-12-01 1973-06-07 Heinz Prof Dr Rer Nat Beneking Halbleiteranordnung

Also Published As

Publication number Publication date
SE311935B (enExample) 1969-06-30
US3265981A (en) 1966-08-09
GB1069924A (en) 1967-05-24

Similar Documents

Publication Publication Date Title
DE69727809T2 (de) Mehrschichtenfilmkondensatoranordnungen und verfahren zur herstellung
DE4013643C2 (de) Bipolartransistor mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung
DE69602866T2 (de) Anordnung mit supraleitendem Übergang
DE4037327C1 (de) Verteilter Breitbandverstärker für UHF-Signale
DE2439875C2 (de) Halbleiterbauelement mit negativer Widerstandscharakteristik
DE2629957C2 (enExample)
DE1260029B (de) Verfahren zum Herstellen von Halbleiterbauelementen auf einem Halbleitereinkristallgrundplaettchen
DE2607940A1 (de) Mehrschichtiges halbleiterbauelement
DE1616344B1 (de) Phasenschieber
DE1437435C3 (de) Hochfrequenzverstärker mit Feldeffekttransistor
DE2638801B2 (de) Rauscharme Tonverstärkerschaltung
DE2548483A1 (de) Feldeffekttransistor und verfahren zu seiner herstellung
DE1154834B (de) Verstaerkende, auf einem Kristall aufgebaute Halbleiterschaltungsanordnung
DE1464395C3 (de) Feldeffekt-Transistor
DE2740203A1 (de) Ladungsuebertragungsanordnung
DE1909721C3 (de) Schaltungsanordnung zur Gleichspannungsteilung
DE2515457C3 (de) Differenzverstärker
DE2165417A1 (de) Elektronische Schaltung
DE2629468A1 (de) Temperaturkompensierter oszillator
DE2236897B2 (enExample)
DE1762435B2 (de) Hochverstaerkende integrierte verstarkerschaltung mit einem mos feldeffekttransistor
DE1639349B2 (de) Feldeffekt-Transistor mit isolierter Gate-Elektrode, Verfahren zu seiner Herstellung und Verwendung eines solchen Feldeffekt-Transistors in einer integrierten Schaltung
DE1297233B (de) Feldeffekttransistor
DE3446001C2 (de) Integrierte Differentialverstärkerschaltung
DE2160687C3 (de) Halbleitervorrichtung