DE1464331B2 - Elektrisch steuerbares opto-elektronisches halbleiterbauelement - Google Patents
Elektrisch steuerbares opto-elektronisches halbleiterbauelementInfo
- Publication number
- DE1464331B2 DE1464331B2 DE1963N0024171 DEN0024171A DE1464331B2 DE 1464331 B2 DE1464331 B2 DE 1464331B2 DE 1963N0024171 DE1963N0024171 DE 1963N0024171 DE N0024171 A DEN0024171 A DE N0024171A DE 1464331 B2 DE1464331 B2 DE 1464331B2
- Authority
- DE
- Germany
- Prior art keywords
- junction
- photon
- semiconductor
- photosensitive
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 82
- 230000005693 optoelectronics Effects 0.000 title claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 239000011701 zinc Substances 0.000 claims description 19
- 239000002800 charge carrier Substances 0.000 claims description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 230000007547 defect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- 206010034972 Photosensitivity reaction Diseases 0.000 description 8
- 230000036211 photosensitivity Effects 0.000 description 8
- 229910052714 tellurium Inorganic materials 0.000 description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000006862 quantum yield reaction Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4836062 | 1962-12-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1464331A1 DE1464331A1 (de) | 1969-03-20 |
| DE1464331B2 true DE1464331B2 (de) | 1976-06-16 |
Family
ID=10448335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1963N0024171 Granted DE1464331B2 (de) | 1962-12-21 | 1963-12-17 | Elektrisch steuerbares opto-elektronisches halbleiterbauelement |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS4636827B1 (en:Method) |
| AT (1) | AT241561B (en:Method) |
| BE (1) | BE641562A (en:Method) |
| CA (1) | CA929275A (en:Method) |
| CH (1) | CH433529A (en:Method) |
| DE (1) | DE1464331B2 (en:Method) |
| DK (1) | DK118904B (en:Method) |
| FR (1) | FR1378512A (en:Method) |
| GB (1) | GB1084101A (en:Method) |
| NL (1) | NL302047A (en:Method) |
| SE (1) | SE321293B (en:Method) |
-
0
- NL NL302047D patent/NL302047A/xx unknown
- GB GB1084101D patent/GB1084101A/en active Active
-
1963
- 1963-12-17 DE DE1963N0024171 patent/DE1464331B2/de active Granted
- 1963-12-18 AT AT1017863A patent/AT241561B/de active
- 1963-12-18 SE SE14120/63A patent/SE321293B/xx unknown
- 1963-12-18 CA CA891551A patent/CA929275A/en not_active Expired
- 1963-12-18 DK DK591363AA patent/DK118904B/da unknown
- 1963-12-18 CH CH1551963A patent/CH433529A/de unknown
- 1963-12-19 BE BE641562A patent/BE641562A/xx unknown
- 1963-12-20 FR FR957979A patent/FR1378512A/fr not_active Expired
- 1963-12-20 JP JP6858063A patent/JPS4636827B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE321293B (en:Method) | 1970-03-02 |
| CA929275A (en) | 1973-06-26 |
| AT241561B (de) | 1965-07-26 |
| BE641562A (en:Method) | 1964-06-19 |
| JPS4636827B1 (en:Method) | 1971-10-28 |
| NL302047A (en:Method) | |
| DK118904B (da) | 1970-10-19 |
| DE1464331A1 (de) | 1969-03-20 |
| CH433529A (de) | 1967-04-15 |
| FR1378512A (fr) | 1964-11-13 |
| GB1084101A (en:Method) |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |