DE1295698B - Verfahren zur Formierung eines Feldeffekttransistors - Google Patents

Verfahren zur Formierung eines Feldeffekttransistors

Info

Publication number
DE1295698B
DE1295698B DEK53316A DEK0053316A DE1295698B DE 1295698 B DE1295698 B DE 1295698B DE K53316 A DEK53316 A DE K53316A DE K0053316 A DEK0053316 A DE K0053316A DE 1295698 B DE1295698 B DE 1295698B
Authority
DE
Germany
Prior art keywords
electrode
lead
field effect
effect transistor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DEK53316A
Other languages
German (de)
English (en)
Inventor
Ono Minoru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE1295698B publication Critical patent/DE1295698B/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
DEK53316A 1963-06-24 1964-06-24 Verfahren zur Formierung eines Feldeffekttransistors Withdrawn DE1295698B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3267463 1963-06-24

Publications (1)

Publication Number Publication Date
DE1295698B true DE1295698B (de) 1969-05-22

Family

ID=12365405

Family Applications (2)

Application Number Title Priority Date Filing Date
DEK53316A Withdrawn DE1295698B (de) 1963-06-24 1964-06-24 Verfahren zur Formierung eines Feldeffekttransistors
DE19641489055 Pending DE1489055B2 (de) 1963-06-24 1964-06-24 Feldeffekttransistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19641489055 Pending DE1489055B2 (de) 1963-06-24 1964-06-24 Feldeffekttransistor

Country Status (4)

Country Link
US (1) US3419766A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE1295698B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (2) GB1071384A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (2) NL6407158A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
AT376845B (de) * 1974-09-20 1985-01-10 Siemens Ag Speicher-feldeffekttransistor
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
DE2852621C4 (de) * 1978-12-05 1995-11-30 Siemens Ag Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone
US4459739A (en) * 1981-05-26 1984-07-17 Northern Telecom Limited Thin film transistors
US4472727A (en) * 1983-08-12 1984-09-18 At&T Bell Laboratories Carrier freezeout field-effect device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE971583C (de) * 1951-09-07 1959-02-19 Siemens Ag Trockengleichrichter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1960-03-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE971583C (de) * 1951-09-07 1959-02-19 Siemens Ag Trockengleichrichter

Also Published As

Publication number Publication date
NL6407180A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1964-12-28
US3419766A (en) 1968-12-31
GB1071383A (en) 1967-06-07
DE1489055B2 (de) 1970-10-01
DE1489055A1 (de) 1969-05-14
NL6407158A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1964-12-28
GB1071384A (en) 1967-06-07

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee