DE1293903B - Integrierte Halbleiterschaltungsanordnung mit thermisch gekoppelten Schaltungselementen - Google Patents

Integrierte Halbleiterschaltungsanordnung mit thermisch gekoppelten Schaltungselementen

Info

Publication number
DE1293903B
DE1293903B DET24202A DET0024202A DE1293903B DE 1293903 B DE1293903 B DE 1293903B DE T24202 A DET24202 A DE T24202A DE T0024202 A DET0024202 A DE T0024202A DE 1293903 B DE1293903 B DE 1293903B
Authority
DE
Germany
Prior art keywords
transistor
stage
circuit arrangement
integrated semiconductor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DET24202A
Other languages
German (de)
English (en)
Inventor
Evans Lee Leland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1293903B publication Critical patent/DE1293903B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34Negative-feedback-circuit arrangements with or without positive feedback
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/4813Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12035Zener diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45498Indexing scheme relating to differential amplifiers the CSC comprising only resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45594Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45664Indexing scheme relating to differential amplifiers the LC comprising one or more cascaded inverter stages as output stage at one output of the dif amp circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45701Indexing scheme relating to differential amplifiers the LC comprising one resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
DET24202A 1962-09-07 1963-06-27 Integrierte Halbleiterschaltungsanordnung mit thermisch gekoppelten Schaltungselementen Pending DE1293903B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22223562A 1962-09-07 1962-09-07

Publications (1)

Publication Number Publication Date
DE1293903B true DE1293903B (de) 1969-04-30

Family

ID=22831420

Family Applications (1)

Application Number Title Priority Date Filing Date
DET24202A Pending DE1293903B (de) 1962-09-07 1963-06-27 Integrierte Halbleiterschaltungsanordnung mit thermisch gekoppelten Schaltungselementen

Country Status (4)

Country Link
DE (1) DE1293903B (fi)
GB (1) GB1021206A (fi)
MY (1) MY6900272A (fi)
NL (1) NL294700A (fi)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2105475A1 (de) * 1970-02-06 1971-08-12 Philips Nv Integrierte Halbleiterschaltung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458903A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Procede et dispositif pour la reduction des reactions thermiques dans les circuits integres monolithiques
DE3671581D1 (de) * 1985-07-09 1990-06-28 Siemens Ag Mosfet mit temperaturschutz.

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
FR1256116A (fr) * 1959-02-06 1961-03-17 Texas Instruments Inc Nouveaux circuits électroniques miniatures et procédés pour leur fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
FR1256116A (fr) * 1959-02-06 1961-03-17 Texas Instruments Inc Nouveaux circuits électroniques miniatures et procédés pour leur fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2105475A1 (de) * 1970-02-06 1971-08-12 Philips Nv Integrierte Halbleiterschaltung

Also Published As

Publication number Publication date
MY6900272A (en) 1969-12-31
GB1021206A (en) 1966-03-02
NL294700A (fi) 1900-01-01

Similar Documents

Publication Publication Date Title
DE3821065C2 (fi)
DE1152763C2 (de) Halbleiterbauelement mit mindestens einem PN-UEbergang
DE2515309C3 (de) Ingegrierte Transistorverstärkerschaltung
DE1211334B (de) Halbleiterbauelement mit eingelassenen Zonen
DE1279196B (de) Flaechentransistor
DE2166507A1 (de) Bezugsspannungsschaltung
DE1283399B (de) Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode
DE2238348B2 (de) Operationsverstärker
DE1295647B (de) Logische Schaltung mit einem mehrere Eingaenge aufweisenden Dioden-Eingangsgatter
DE2500057C2 (de) Schaltungsanordnung zur Frequenzstabilisierung einer integrierten Schaltung
DE1437435C3 (de) Hochfrequenzverstärker mit Feldeffekttransistor
DE1589707B2 (de) Temperaturkompensierte Z Diodenanord nung
DE1564048C3 (de) Halbleiterschalter für niedrige Schaltspannungen
DE2300116B2 (de) Hochfrequenz-Feldeffekttransistor mit isolierter Gate-Elektrode für Breitbandbetrieb
DE2635218C2 (de) Anordnung zum Schutz eines Transistors
DE2514619C3 (de) Regelbare Differentialverstärkeranordnung
DE1762435B2 (de) Hochverstaerkende integrierte verstarkerschaltung mit einem mos feldeffekttransistor
DE2607892C3 (de) Schaltungsanordnung zur Formung von Impulsen mit veränderbarem Tastverhältnis unter Verwendung eines Differenzverstärkers
DE2515457B2 (de) Differenzverstärker
DE2236897A1 (de) Verfahren zur herstellung von halbleiterbauteilen
DE1293903B (de) Integrierte Halbleiterschaltungsanordnung mit thermisch gekoppelten Schaltungselementen
DE1297233B (de) Feldeffekttransistor
DE1541488B2 (de) Monolithisch-integrierte halbleiter-verstaerker-schaltung
DE2953403C2 (de) Hochleistungs-Schalter unter Verwendung eines torgesteuerten Diodenschalters
DE68912415T2 (de) Integrierte Stromspiegelschaltung mit vertikalen Transistoren.