DE1276208B - Verfahren zum Herstellen halbleitender Koerper durch Aufdampfen - Google Patents
Verfahren zum Herstellen halbleitender Koerper durch AufdampfenInfo
- Publication number
- DE1276208B DE1276208B DEN18423A DEN0018423A DE1276208B DE 1276208 B DE1276208 B DE 1276208B DE N18423 A DEN18423 A DE N18423A DE N0018423 A DEN0018423 A DE N0018423A DE 1276208 B DE1276208 B DE 1276208B
- Authority
- DE
- Germany
- Prior art keywords
- cathode
- semiconductor material
- torr
- temperature
- vapor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 238000007740 vapor deposition Methods 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005372 isotope separation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1276208X | 1959-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1276208B true DE1276208B (de) | 1968-08-29 |
Family
ID=19872811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN18423A Pending DE1276208B (de) | 1959-06-02 | 1960-05-30 | Verfahren zum Herstellen halbleitender Koerper durch Aufdampfen |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1276208B (ja) |
| NL (2) | NL110479C (ja) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE764927C (de) * | 1939-02-22 | 1951-08-06 | Bosch Gmbh Robert | Verfahren zur Verdampfung im Vakuum |
| DE860973C (de) * | 1944-08-21 | 1952-12-29 | Siemens Ag | Detektor |
| DE891113C (de) * | 1951-09-08 | 1953-09-24 | Licentia Gmbh | Verfahren zur Herstellung elektrisch unsymmetrisch leitender Systeme |
| DE1011528B (de) * | 1954-05-17 | 1957-07-04 | Licentia Gmbh | Verfahren zur Oberflaechenbehandlung eines Kristalles aus einer halbleitenden Verbindung |
| DE1030463B (de) * | 1954-07-31 | 1958-05-22 | Licentia Gmbh | Verfahren zur Herstellung von Halbleiterkristallen mit p-n-UEbergaengen |
-
0
- NL NL239786D patent/NL239786A/xx unknown
- NL NL110479D patent/NL110479C/xx active
-
1960
- 1960-05-30 DE DEN18423A patent/DE1276208B/de active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE764927C (de) * | 1939-02-22 | 1951-08-06 | Bosch Gmbh Robert | Verfahren zur Verdampfung im Vakuum |
| DE860973C (de) * | 1944-08-21 | 1952-12-29 | Siemens Ag | Detektor |
| DE891113C (de) * | 1951-09-08 | 1953-09-24 | Licentia Gmbh | Verfahren zur Herstellung elektrisch unsymmetrisch leitender Systeme |
| DE1011528B (de) * | 1954-05-17 | 1957-07-04 | Licentia Gmbh | Verfahren zur Oberflaechenbehandlung eines Kristalles aus einer halbleitenden Verbindung |
| DE1030463B (de) * | 1954-07-31 | 1958-05-22 | Licentia Gmbh | Verfahren zur Herstellung von Halbleiterkristallen mit p-n-UEbergaengen |
Also Published As
| Publication number | Publication date |
|---|---|
| NL239786A (ja) | |
| NL110479C (ja) |
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