DE1260636B - Verfahren zur Herstellung eines Halbleiterbauelementes - Google Patents

Verfahren zur Herstellung eines Halbleiterbauelementes

Info

Publication number
DE1260636B
DE1260636B DEW24058A DEW0024058A DE1260636B DE 1260636 B DE1260636 B DE 1260636B DE W24058 A DEW24058 A DE W24058A DE W0024058 A DEW0024058 A DE W0024058A DE 1260636 B DE1260636 B DE 1260636B
Authority
DE
Germany
Prior art keywords
solder
nickel
solder layer
silicon
silicon body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW24058A
Other languages
German (de)
English (en)
Inventor
William Brian Glass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Publication of DE1260636B publication Critical patent/DE1260636B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DEW24058A 1957-09-11 1958-09-09 Verfahren zur Herstellung eines Halbleiterbauelementes Pending DE1260636B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28614/57A GB894786A (en) 1957-09-11 1957-09-11 Improvements relating to the manufacture of silicon semi-conductor devices

Publications (1)

Publication Number Publication Date
DE1260636B true DE1260636B (de) 1968-02-08

Family

ID=10278383

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW24058A Pending DE1260636B (de) 1957-09-11 1958-09-09 Verfahren zur Herstellung eines Halbleiterbauelementes

Country Status (4)

Country Link
BE (1) BE571042A (enrdf_load_html_response)
DE (1) DE1260636B (enrdf_load_html_response)
FR (1) FR1202531A (enrdf_load_html_response)
GB (1) GB894786A (enrdf_load_html_response)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE408226C (de) * 1922-09-30 1925-01-14 Arno Rysick Typensetz- und Ablegevorrichtung mit Typen in nebeneinanderliegenden Rinnen
US2781481A (en) * 1952-06-02 1957-02-12 Rca Corp Semiconductors and methods of making same
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE408226C (de) * 1922-09-30 1925-01-14 Arno Rysick Typensetz- und Ablegevorrichtung mit Typen in nebeneinanderliegenden Rinnen
US2781481A (en) * 1952-06-02 1957-02-12 Rca Corp Semiconductors and methods of making same
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them

Also Published As

Publication number Publication date
FR1202531A (fr) 1960-01-11
BE571042A (enrdf_load_html_response)
GB894786A (en) 1962-04-26

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