GB894786A - Improvements relating to the manufacture of silicon semi-conductor devices - Google Patents
Improvements relating to the manufacture of silicon semi-conductor devicesInfo
- Publication number
- GB894786A GB894786A GB2861457A GB2861457A GB894786A GB 894786 A GB894786 A GB 894786A GB 2861457 A GB2861457 A GB 2861457A GB 2861457 A GB2861457 A GB 2861457A GB 894786 A GB894786 A GB 894786A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solder
- nickel
- disc
- silicon
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052710 silicon Inorganic materials 0.000 title abstract 7
- 239000010703 silicon Substances 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 10
- 229910000679 solder Inorganic materials 0.000 abstract 8
- 239000002184 metal Substances 0.000 abstract 6
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 229910052759 nickel Inorganic materials 0.000 abstract 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 229910001174 tin-lead alloy Inorganic materials 0.000 abstract 2
- 238000009736 wetting Methods 0.000 abstract 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003303 reheating Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Current-Collector Devices For Electrically Propelled Vehicles (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
894,786. Soldering. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd., and GLASS, W. B. Sept. 10, 1958 [Sept. 11, 1957], No. 28614/57. Class 83 (4). [Also in Group XXXVI] In making a silicon semi-conductor device, firstly, a quantity of nickel is introduced into a solder and secondly, the solder is applied to a silicon element, the solder acquiring during the first step sufficient nickel to destroy, at least partially, any oxide film present on the element to enable wetting of the element. A nickel-iron disc, whose coefficient of thermal expansion is close to that of silicon, is covered with a low-melting point soft metal, e.g. tin or tin-lead alloy and is heated in hydrogen to not more than 700 C. to partially alloy the soft metal with the nickel and iron. The cooled disc has a solder coating containing up to 1% nickel. Alternatively, 1% nickel may be dissolved in tin or tin-lead alloy to form a solder and this solder and a disc of metal other than a nickel alloy are heated as before. The silicon body is contacted with the solder on the disc and heated in hydrogen to 750‹ C. to bond the body and disc now forming a contact. The nickel iron disc may be removed during cooling or by reheating and replaced by a disc of other metal or a metal lead or electrode may be attached to the wetted area. An impurity, with or without a carrier, may be applied to the wetted area to form a rectifier with a PN junction. Transistors with PNP or NPN junctions may be similarly made. Silicon bodies provided with PN junctions by diffusion may be wetted by the method described, the silicon surface being cleaned by etching before wetting. A solder of high.melting point, e.g. lead, may be superimposed on the wetted surface to bond a metal contact thereto.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE571042D BE571042A (en) | 1957-09-11 | ||
GB2861457A GB894786A (en) | 1957-09-11 | 1957-09-11 | Improvements relating to the manufacture of silicon semi-conductor devices |
DE1958W0024058 DE1260636B (en) | 1957-09-11 | 1958-09-09 | Method for manufacturing a semiconductor component |
FR1202531D FR1202531A (en) | 1957-09-11 | 1958-09-11 | Method for wetting the surface of a silicon part, applicable to the manufacture of rectifiers and transistrons |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2861457A GB894786A (en) | 1957-09-11 | 1957-09-11 | Improvements relating to the manufacture of silicon semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB894786A true GB894786A (en) | 1962-04-26 |
Family
ID=10278383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2861457A Expired GB894786A (en) | 1957-09-11 | 1957-09-11 | Improvements relating to the manufacture of silicon semi-conductor devices |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE571042A (en) |
DE (1) | DE1260636B (en) |
FR (1) | FR1202531A (en) |
GB (1) | GB894786A (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE408226C (en) * | 1922-09-30 | 1925-01-14 | Arno Rysick | Type setting and depositing device with types in adjacent channels |
BE520380A (en) * | 1952-06-02 | |||
US2801375A (en) * | 1955-08-01 | 1957-07-30 | Westinghouse Electric Corp | Silicon semiconductor devices and processes for making them |
-
0
- BE BE571042D patent/BE571042A/xx unknown
-
1957
- 1957-09-11 GB GB2861457A patent/GB894786A/en not_active Expired
-
1958
- 1958-09-09 DE DE1958W0024058 patent/DE1260636B/en active Pending
- 1958-09-11 FR FR1202531D patent/FR1202531A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1202531A (en) | 1960-01-11 |
BE571042A (en) | |
DE1260636B (en) | 1968-02-08 |
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