FR1202531A - Method for wetting the surface of a silicon part, applicable to the manufacture of rectifiers and transistrons - Google Patents

Method for wetting the surface of a silicon part, applicable to the manufacture of rectifiers and transistrons

Info

Publication number
FR1202531A
FR1202531A FR1202531DA FR1202531A FR 1202531 A FR1202531 A FR 1202531A FR 1202531D A FR1202531D A FR 1202531DA FR 1202531 A FR1202531 A FR 1202531A
Authority
FR
France
Prior art keywords
transistrons
rectifiers
wetting
applicable
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Application granted granted Critical
Publication of FR1202531A publication Critical patent/FR1202531A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1202531D 1957-09-11 1958-09-11 Method for wetting the surface of a silicon part, applicable to the manufacture of rectifiers and transistrons Expired FR1202531A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2861457A GB894786A (en) 1957-09-11 1957-09-11 Improvements relating to the manufacture of silicon semi-conductor devices

Publications (1)

Publication Number Publication Date
FR1202531A true FR1202531A (en) 1960-01-11

Family

ID=10278383

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1202531D Expired FR1202531A (en) 1957-09-11 1958-09-11 Method for wetting the surface of a silicon part, applicable to the manufacture of rectifiers and transistrons

Country Status (4)

Country Link
BE (1) BE571042A (en)
DE (1) DE1260636B (en)
FR (1) FR1202531A (en)
GB (1) GB894786A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE408226C (en) * 1922-09-30 1925-01-14 Arno Rysick Type setting and depositing device with types in adjacent channels
BE520380A (en) * 1952-06-02
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them

Also Published As

Publication number Publication date
DE1260636B (en) 1968-02-08
BE571042A (en)
GB894786A (en) 1962-04-26

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