DE1257988B - Photoempfindlicher Feldeffekttransistor - Google Patents
Photoempfindlicher FeldeffekttransistorInfo
- Publication number
- DE1257988B DE1257988B DEN26955A DEN0026955A DE1257988B DE 1257988 B DE1257988 B DE 1257988B DE N26955 A DEN26955 A DE N26955A DE N0026955 A DEN0026955 A DE N0026955A DE 1257988 B DE1257988 B DE 1257988B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor body
- photosensitive
- photosensitive layer
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 92
- 230000004888 barrier function Effects 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 29
- 230000035945 sensitivity Effects 0.000 claims description 11
- 230000003595 spectral effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 12
- 230000007704 transition Effects 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6407445A NL6407445A (da) | 1964-07-01 | 1964-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1257988B true DE1257988B (de) | 1968-01-04 |
Family
ID=19790420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN26955A Pending DE1257988B (de) | 1964-07-01 | 1965-06-26 | Photoempfindlicher Feldeffekttransistor |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3348074A (da) |
| JP (1) | JPS429736B1 (da) |
| AT (1) | AT264612B (da) |
| BE (1) | BE666241A (da) |
| CH (1) | CH448293A (da) |
| DE (1) | DE1257988B (da) |
| DK (1) | DK119264B (da) |
| FR (1) | FR1455195A (da) |
| GB (1) | GB1105269A (da) |
| NL (1) | NL6407445A (da) |
| SE (1) | SE325347B (da) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3523188A (en) * | 1965-12-20 | 1970-08-04 | Xerox Corp | Semiconductor current control device and method |
| US3543031A (en) * | 1965-12-20 | 1970-11-24 | Xerox Corp | Device and process for image storage |
| US3427461A (en) * | 1966-02-23 | 1969-02-11 | Fairchild Camera Instr Co | Storage mode operation of a photosensor |
| DE1299087B (de) * | 1966-05-10 | 1969-07-10 | Siemens Ag | Feldeffekt-Fototransistor |
| US3531646A (en) * | 1966-09-29 | 1970-09-29 | Xerox Corp | Enhancement of electrostatic images |
| US3474417A (en) * | 1966-09-29 | 1969-10-21 | Xerox Corp | Field effect solid state image pickup and storage device |
| US3493812A (en) * | 1967-04-26 | 1970-02-03 | Rca Corp | Integrated thin film translators |
| FR2160095A5 (da) * | 1971-11-10 | 1973-06-22 | Omron Tateisi Electronics Co | |
| US3868503A (en) * | 1973-04-26 | 1975-02-25 | Us Navy | Monochromatic detector |
| US3996461A (en) * | 1975-03-31 | 1976-12-07 | Texas Instruments Incorporated | Silicon photosensor with optical thin film filter |
| DE3146981A1 (de) * | 1981-11-26 | 1983-06-01 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb. |
| JPS58137264A (ja) * | 1982-02-09 | 1983-08-15 | Fuji Electric Corp Res & Dev Ltd | 光電変換装置 |
| US5272358A (en) * | 1986-08-13 | 1993-12-21 | Hitachi, Ltd. | Superconducting device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1276269A (fr) * | 1959-12-18 | 1961-11-17 | Ibm | Dispositif semi-conducteur photosensible à effet de champ |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3028500A (en) * | 1956-08-24 | 1962-04-03 | Rca Corp | Photoelectric apparatus |
| US3005107A (en) * | 1959-06-04 | 1961-10-17 | Hoffman Electronics Corp | Photoconductive devices |
| US3051840A (en) * | 1959-12-18 | 1962-08-28 | Ibm | Photosensitive field effect unit |
| US3117229A (en) * | 1960-10-03 | 1964-01-07 | Solid State Radiations Inc | Solid state radiation detector with separate ohmic contacts to reduce leakage current |
| US3211911A (en) * | 1962-09-11 | 1965-10-12 | Justin M Ruhge | Method and photocell device for obtaining light source position data |
| US3300644A (en) * | 1963-12-04 | 1967-01-24 | Jay N Zemel | Self-chopping photodetector |
-
1964
- 1964-07-01 NL NL6407445A patent/NL6407445A/xx unknown
-
1965
- 1965-06-26 DE DEN26955A patent/DE1257988B/de active Pending
- 1965-06-28 AT AT585565A patent/AT264612B/de active
- 1965-06-28 GB GB27263/65A patent/GB1105269A/en not_active Expired
- 1965-06-28 SE SE08511/65A patent/SE325347B/xx unknown
- 1965-06-28 DK DK328265AA patent/DK119264B/da unknown
- 1965-06-30 US US468537A patent/US3348074A/en not_active Expired - Lifetime
- 1965-06-30 CH CH914465A patent/CH448293A/de unknown
- 1965-07-01 BE BE666241A patent/BE666241A/xx unknown
- 1965-07-01 FR FR23140A patent/FR1455195A/fr not_active Expired
- 1965-07-01 JP JP3905765A patent/JPS429736B1/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1276269A (fr) * | 1959-12-18 | 1961-11-17 | Ibm | Dispositif semi-conducteur photosensible à effet de champ |
Also Published As
| Publication number | Publication date |
|---|---|
| AT264612B (de) | 1968-09-10 |
| DK119264B (da) | 1970-12-07 |
| JPS429736B1 (da) | 1967-05-20 |
| SE325347B (da) | 1970-06-29 |
| FR1455195A (fr) | 1966-04-01 |
| BE666241A (da) | 1966-01-03 |
| US3348074A (en) | 1967-10-17 |
| CH448293A (de) | 1967-12-15 |
| GB1105269A (en) | 1968-03-06 |
| NL6407445A (da) | 1966-01-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2922334C2 (da) | ||
| DE891580C (de) | Lichtelektrische Halbleitereinrichtungen | |
| DE1257988B (de) | Photoempfindlicher Feldeffekttransistor | |
| EP0011879B1 (de) | Feldeffekttransistor | |
| DE2050289A1 (da) | ||
| DE2013742C2 (de) | Steuerbarer Halbleitergleichrichter | |
| DE1238574B (de) | Steuerbares und schaltbares Halbleiterbauelement | |
| DE2712114C2 (de) | Schaltbare Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
| DE1489667A1 (de) | Steuerbares Halbleiterventil mit mehreren Schichten | |
| DE1489894B2 (de) | In zwei richtungen schaltbares halbleiterbauelement | |
| DE1437435B2 (de) | Hochfrequenzverstärker mit Feldeffekttransistor | |
| DE2719219C2 (de) | Mit Hilfe einer Steuerelektrode abschaltbare Thyristortriode | |
| DE1614300B2 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
| DE2906721A1 (de) | Halbleiter-schaltvorrichtung | |
| DE1589455A1 (de) | Steuerbare Halbleiteranordnung | |
| DE2904424C2 (de) | Thyristor mit Steuerung durch Feldeffekttransistor | |
| DE2021160A1 (de) | Halbleiterschaltvorrichtung | |
| EP0040816B1 (de) | Zweirichtungsthyristor | |
| DE1293900B (de) | Feldeffekt-Halbleiterbauelement | |
| DE1514228C3 (de) | Feldeffekttransistor | |
| DE2119610A1 (de) | Dünnfilm-Leistungs-Feldeffekttransistor | |
| DE2809564A1 (de) | Gesteuerter halbleitergleichrichter | |
| DE1936603U (de) | Halbleiterschalter. | |
| DE2923693A1 (de) | Schalttransistor | |
| DE2452209C3 (de) | Metall-Halbleiterdiode |