DE1252258C2 - Nach dem elektrostatischen prinzip arbeitender elektroakustischer wandler und verfahren zu seiner herstellung - Google Patents
Nach dem elektrostatischen prinzip arbeitender elektroakustischer wandler und verfahren zu seiner herstellungInfo
- Publication number
- DE1252258C2 DE1252258C2 DENDAT1252258D DE1252258DA DE1252258C2 DE 1252258 C2 DE1252258 C2 DE 1252258C2 DE NDAT1252258 D DENDAT1252258 D DE NDAT1252258D DE 1252258D A DE1252258D A DE 1252258DA DE 1252258 C2 DE1252258 C2 DE 1252258C2
- Authority
- DE
- Germany
- Prior art keywords
- capacitor plate
- field effect
- effect transistor
- control electrode
- attached
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 3
- 239000003990 capacitor Substances 0.000 claims description 32
- 230000005669 field effect Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 108091006146 Channels Proteins 0.000 description 4
- 239000012876 carrier material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
- H03F3/185—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Power Engineering (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB15677/65A GB1036837A (en) | 1965-04-13 | 1965-04-13 | Improvements in or relating to electromechanical transducers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1252258B DE1252258B (de) | 1967-10-19 |
| DE1252258C2 true DE1252258C2 (de) | 1974-06-20 |
Family
ID=10063438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DENDAT1252258D Expired DE1252258C2 (de) | 1965-04-13 | Nach dem elektrostatischen prinzip arbeitender elektroakustischer wandler und verfahren zu seiner herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3445596A (OSRAM) |
| CH (1) | CH442430A (OSRAM) |
| DE (1) | DE1252258C2 (OSRAM) |
| GB (1) | GB1036837A (OSRAM) |
| NL (1) | NL6604883A (OSRAM) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3624315A (en) * | 1967-01-23 | 1971-11-30 | Max E Broce | Transducer apparatus and transducer amplifier system utilizing insulated gate semiconductor field effect devices |
| US3609252A (en) * | 1967-01-23 | 1971-09-28 | Texas Instruments Inc | Transducer apparatus and system utilizing insulated gate semiconductor field effect devices |
| CH466376A (de) * | 1968-03-01 | 1968-12-15 | Ibm | Anordnung zur Umwandlung von Drücken in digitale elektrische Signale |
| US3634727A (en) * | 1968-12-03 | 1972-01-11 | Bendix Corp | Capacitance-type pressure transducer |
| JPS5221046Y2 (OSRAM) * | 1971-08-31 | 1977-05-14 | ||
| US3920930A (en) * | 1974-04-08 | 1975-11-18 | John James Sobczyk | Field effect recordings and semiconductor playback devices |
| JPS5618080Y2 (OSRAM) * | 1974-09-14 | 1981-04-27 | ||
| JPS5516228A (en) * | 1978-07-21 | 1980-02-04 | Hitachi Ltd | Capacity type sensor |
| CA1107382A (en) * | 1978-11-03 | 1981-08-18 | Beverley W. Gumb | Electret microphone with simplified electrical connections by printed circuit board mounting |
| JPS55110924A (en) * | 1979-02-20 | 1980-08-27 | Murata Mfg Co Ltd | Integrated construction type vibration detecter |
| US4812888A (en) * | 1984-11-11 | 1989-03-14 | Cornell Research Foundation, Inc. | Suspended gate field effect semiconductor pressure transducer device |
| US10153740B2 (en) | 2016-07-11 | 2018-12-11 | Knowles Electronics, Llc | Split signal differential MEMS microphone |
| EP3855129B1 (en) | 2017-03-22 | 2023-10-25 | Knowles Electronics, LLC | Interface circuit for a capacitive sensor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
| US3108162A (en) * | 1960-04-11 | 1963-10-22 | Schindler Mark | Capacitor acousto-electric transducer and method of making the same |
| US3016752A (en) * | 1960-11-16 | 1962-01-16 | Eugene C Huebschmann | Transistor type accelerometer |
| US3300585A (en) * | 1963-09-04 | 1967-01-24 | Northern Electric Co | Self-polarized electrostatic microphone-semiconductor amplifier combination |
| US3274462A (en) * | 1963-11-13 | 1966-09-20 | Jr Keats A Pullen | Structural configuration for fieldeffect and junction transistors |
| DE1197510B (de) * | 1963-12-14 | 1965-07-29 | Siemens Ag | Elektroakustischer Wandler auf Halbleiterbasis |
-
0
- DE DENDAT1252258D patent/DE1252258C2/de not_active Expired
-
1965
- 1965-04-13 GB GB15677/65A patent/GB1036837A/en not_active Expired
-
1966
- 1966-02-03 US US524794A patent/US3445596A/en not_active Expired - Lifetime
- 1966-04-12 NL NL6604883A patent/NL6604883A/xx unknown
- 1966-04-13 CH CH535266A patent/CH442430A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6604883A (OSRAM) | 1966-10-14 |
| DE1252258B (de) | 1967-10-19 |
| CH442430A (de) | 1967-08-31 |
| US3445596A (en) | 1969-05-20 |
| GB1036837A (en) | 1966-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C2 | Grant after previous publication (2nd publication) |