DE1248183B - Aktives mehrschichtiges Festkoerperbauelement - Google Patents
Aktives mehrschichtiges FestkoerperbauelementInfo
- Publication number
- DE1248183B DE1248183B DES96708A DES0096708A DE1248183B DE 1248183 B DE1248183 B DE 1248183B DE S96708 A DES96708 A DE S96708A DE S0096708 A DES0096708 A DE S0096708A DE 1248183 B DE1248183 B DE 1248183B
- Authority
- DE
- Germany
- Prior art keywords
- solid
- component according
- state component
- semiconducting
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title claims description 25
- 239000002784 hot electron Substances 0.000 claims description 83
- 239000004065 semiconductor Substances 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 230000005855 radiation Effects 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 21
- 230000003993 interaction Effects 0.000 claims description 21
- 230000010355 oscillation Effects 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 3
- -1 guanidine aluminum sulfate hexahydrate triglycine sulfate Chemical compound 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000002123 temporal effect Effects 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims 1
- 230000005672 electromagnetic field Effects 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010970 precious metal Substances 0.000 claims 1
- MFJVKDNDFBUGCE-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) sulfide Chemical compound [S-2].[Zn+2].[Se-2].[Cd+2] MFJVKDNDFBUGCE-UHFFFAOYSA-N 0.000 claims 1
- 230000035882 stress Effects 0.000 description 10
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012549 training Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000002772 conduction electron Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- AGNTUZCMJBTHOG-UHFFFAOYSA-N 3-[3-(2,3-dihydroxypropoxy)-2-hydroxypropoxy]propane-1,2-diol Chemical compound OCC(O)COCC(O)COCC(O)CO AGNTUZCMJBTHOG-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- CDOBGXTYYCPFLM-UHFFFAOYSA-K aluminum;carbamimidoylazanium;disulfate;hexahydrate Chemical compound O.O.O.O.O.O.[Al+3].NC([NH3+])=N.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O CDOBGXTYYCPFLM-UHFFFAOYSA-K 0.000 description 1
- JLATXDOZXBEBJX-UHFFFAOYSA-N cadmium(2+);selenium(2-);sulfide Chemical compound [S-2].[Se-2].[Cd+2].[Cd+2] JLATXDOZXBEBJX-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES96708A DE1248183B (de) | 1965-04-23 | 1965-04-23 | Aktives mehrschichtiges Festkoerperbauelement |
| NL6605015A NL6605015A (enrdf_load_stackoverflow) | 1965-04-23 | 1966-04-14 | |
| AT376666A AT261677B (de) | 1965-04-23 | 1966-04-21 | Aktives mehrschichtiges Festkörperbauelement |
| FR58709A FR1478715A (fr) | 1965-04-23 | 1966-04-22 | Composant solide, actif à plusieurs couches |
| GB17619/66A GB1139767A (en) | 1965-04-23 | 1966-04-22 | Improvements in or relating to activesolid-state circuit elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES96708A DE1248183B (de) | 1965-04-23 | 1965-04-23 | Aktives mehrschichtiges Festkoerperbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1248183B true DE1248183B (de) | 1967-08-24 |
Family
ID=7520242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES96708A Pending DE1248183B (de) | 1965-04-23 | 1965-04-23 | Aktives mehrschichtiges Festkoerperbauelement |
Country Status (4)
| Country | Link |
|---|---|
| AT (1) | AT261677B (enrdf_load_stackoverflow) |
| DE (1) | DE1248183B (enrdf_load_stackoverflow) |
| GB (1) | GB1139767A (enrdf_load_stackoverflow) |
| NL (1) | NL6605015A (enrdf_load_stackoverflow) |
-
1965
- 1965-04-23 DE DES96708A patent/DE1248183B/de active Pending
-
1966
- 1966-04-14 NL NL6605015A patent/NL6605015A/xx unknown
- 1966-04-21 AT AT376666A patent/AT261677B/de active
- 1966-04-22 GB GB17619/66A patent/GB1139767A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6605015A (enrdf_load_stackoverflow) | 1966-10-24 |
| AT261677B (de) | 1968-05-10 |
| GB1139767A (en) | 1969-01-15 |
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