DE1239025B - Elektrisch schalterartig steuerbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps - Google Patents
Elektrisch schalterartig steuerbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten LeitungstypsInfo
- Publication number
 - DE1239025B DE1239025B DEW33087A DEW0033087A DE1239025B DE 1239025 B DE1239025 B DE 1239025B DE W33087 A DEW33087 A DE W33087A DE W0033087 A DEW0033087 A DE W0033087A DE 1239025 B DE1239025 B DE 1239025B
 - Authority
 - DE
 - Germany
 - Prior art keywords
 - semiconductor component
 - main electrode
 - shape
 - component according
 - recess
 - Prior art date
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Pending
 
Links
Classifications
- 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L23/00—Details of semiconductor or other solid state devices
 - H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
 - H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L23/00—Details of semiconductor or other solid state devices
 - H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
 - H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
 
 - 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D99/00—Subject matter not provided for in other groups of this subclass
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
 - H01L2924/0001—Technical content checked by a classifier
 - H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
 
 
Landscapes
- Physics & Mathematics (AREA)
 - Condensed Matter Physics & Semiconductors (AREA)
 - General Physics & Mathematics (AREA)
 - Engineering & Computer Science (AREA)
 - Computer Hardware Design (AREA)
 - Microelectronics & Electronic Packaging (AREA)
 - Power Engineering (AREA)
 - Thyristors (AREA)
 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| US148083A US3160800A (en) | 1961-10-27 | 1961-10-27 | High power semiconductor switch | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| DE1239025B true DE1239025B (de) | 1967-04-20 | 
Family
ID=22524185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| DEW33087A Pending DE1239025B (de) | 1961-10-27 | 1962-10-09 | Elektrisch schalterartig steuerbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps | 
Country Status (4)
| Country | Link | 
|---|---|
| US (1) | US3160800A (OSRAM) | 
| BE (1) | BE624012A (OSRAM) | 
| CH (1) | CH414867A (OSRAM) | 
| DE (1) | DE1239025B (OSRAM) | 
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| BE629939A (OSRAM) * | 1962-03-24 | |||
| DE1202906B (de) * | 1962-05-10 | 1965-10-14 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen | 
| NL302170A (OSRAM) * | 1963-06-15 | |||
| US3271637A (en) * | 1963-07-22 | 1966-09-06 | Nasa | Gaas solar detector using manganese as a doping agent | 
| US3280388A (en) * | 1964-03-09 | 1966-10-18 | Int Rectifier Corp | Housing for multi-lead semiconductor device including crimping connection means for one lead | 
| GB1095469A (OSRAM) * | 1964-03-21 | |||
| DE1514751B1 (de) * | 1964-04-21 | 1970-10-29 | Standard Elek K Lorenz Ag | Magnetisch betaetigbarer Zungenankerkontakt | 
| GB1112301A (en) * | 1964-07-27 | 1968-05-01 | Gen Electric | Controlled rectifier with improved turn-on and turn-off characteristics | 
| US3319139A (en) * | 1964-08-18 | 1967-05-09 | Hughes Aircraft Co | Planar transistor device having a reentrant shaped emitter region with base connection in the reentrant portion | 
| DE1489791A1 (de) * | 1964-12-22 | 1969-06-12 | Ckd Praha Narodni Podnik | Halbleiterbauelement mit einer Flaechenhalbleiteranordnung zwischen durch Federdruck angepressten Elektrodenkontaktplatten | 
| US3372318A (en) * | 1965-01-22 | 1968-03-05 | Gen Electric | Semiconductor switches | 
| DE1514563A1 (de) * | 1965-09-07 | 1969-06-19 | Semikron Gleichrichterbau | Steuerbares Halbleiterbauelement | 
| US3403309A (en) * | 1965-10-23 | 1968-09-24 | Westinghouse Electric Corp | High-speed semiconductor switch | 
| SE311701B (OSRAM) * | 1966-07-07 | 1969-06-23 | Asea Ab | |
| DE1564755A1 (de) * | 1966-11-10 | 1970-05-14 | Siemens Ag | Leistungstransistor | 
| US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers | 
| US3978513A (en) * | 1971-05-21 | 1976-08-31 | Hitachi, Ltd. | Semiconductor controlled rectifying device | 
| US4143395A (en) * | 1976-10-15 | 1979-03-06 | Tokyo Shibaura Electric Co., Ltd. | Stud-type semiconductor device | 
| DE2812700A1 (de) * | 1978-03-23 | 1979-12-06 | Bbc Brown Boveri & Cie | Halbleiteranordnung mit zwei halbleiterelementen | 
| DE3331298A1 (de) * | 1983-08-31 | 1985-03-14 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungsthyristor auf einem substrat | 
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| FR1243356A (fr) * | 1959-01-30 | 1960-10-07 | Siemens Ag | Dispositif semi-conducteur comportant quatre couches de types de conductibilité alternés | 
| FR1260954A (fr) * | 1959-06-17 | 1961-05-12 | Western Electric Co | Commutateur à semi-conducteur | 
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems | 
| BE534817A (OSRAM) * | 1954-01-14 | 1900-01-01 | ||
| NL94394C (OSRAM) * | 1955-05-04 | |||
| US2936409A (en) * | 1956-12-13 | 1960-05-10 | Gen Electric | Current rectifier assemblies | 
| US2980832A (en) * | 1959-06-10 | 1961-04-18 | Westinghouse Electric Corp | High current npnp switch | 
- 
        0
        
- BE BE624012D patent/BE624012A/xx unknown
 
 - 
        1961
        
- 1961-10-27 US US148083A patent/US3160800A/en not_active Expired - Lifetime
 
 - 
        1962
        
- 1962-10-09 DE DEW33087A patent/DE1239025B/de active Pending
 - 1962-10-22 CH CH1238162A patent/CH414867A/de unknown
 
 
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| FR1243356A (fr) * | 1959-01-30 | 1960-10-07 | Siemens Ag | Dispositif semi-conducteur comportant quatre couches de types de conductibilité alternés | 
| FR1260954A (fr) * | 1959-06-17 | 1961-05-12 | Western Electric Co | Commutateur à semi-conducteur | 
Also Published As
| Publication number | Publication date | 
|---|---|
| US3160800A (en) | 1964-12-08 | 
| BE624012A (OSRAM) | |
| CH414867A (de) | 1966-06-15 | 
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