DE1235435B - Mikrominiaturisierte elektronische Kippschaltungsanordnung - Google Patents

Mikrominiaturisierte elektronische Kippschaltungsanordnung

Info

Publication number
DE1235435B
DE1235435B DES70813A DES0070813A DE1235435B DE 1235435 B DE1235435 B DE 1235435B DE S70813 A DES70813 A DE S70813A DE S0070813 A DES0070813 A DE S0070813A DE 1235435 B DE1235435 B DE 1235435B
Authority
DE
Germany
Prior art keywords
semiconductor
functional elements
trigger circuit
electronic trigger
microminiaturized electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES70813A
Other languages
German (de)
English (en)
Inventor
Dr Heinz Dorendorf
Dr Wolfgang Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL269817D priority Critical patent/NL269817A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES70813A priority patent/DE1235435B/de
Priority to CH942361A priority patent/CH395186A/de
Priority to FR875247A priority patent/FR1302816A/fr
Priority to GB36327/61A priority patent/GB936776A/en
Publication of DE1235435B publication Critical patent/DE1235435B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/282—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable
    • H03K3/2823—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable using two active transistor of the same conductivity type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DES70813A 1960-10-10 1960-10-10 Mikrominiaturisierte elektronische Kippschaltungsanordnung Pending DE1235435B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL269817D NL269817A (enExample) 1960-10-10
DES70813A DE1235435B (de) 1960-10-10 1960-10-10 Mikrominiaturisierte elektronische Kippschaltungsanordnung
CH942361A CH395186A (de) 1960-10-10 1961-08-11 Als freischwingende Kippschaltung ausgebildete integrierte Schaltung
FR875247A FR1302816A (fr) 1960-10-10 1961-10-06 Circuit à bascule auto-oscillant
GB36327/61A GB936776A (en) 1960-10-10 1961-10-10 Improvements in or relating to semiconductor relaxation oscillator circuit arrangements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES70813A DE1235435B (de) 1960-10-10 1960-10-10 Mikrominiaturisierte elektronische Kippschaltungsanordnung

Publications (1)

Publication Number Publication Date
DE1235435B true DE1235435B (de) 1967-03-02

Family

ID=7502045

Family Applications (1)

Application Number Title Priority Date Filing Date
DES70813A Pending DE1235435B (de) 1960-10-10 1960-10-10 Mikrominiaturisierte elektronische Kippschaltungsanordnung

Country Status (4)

Country Link
CH (1) CH395186A (enExample)
DE (1) DE1235435B (enExample)
GB (1) GB936776A (enExample)
NL (1) NL269817A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4235014A (en) 1979-03-26 1980-11-25 Western Electric Company, Inc. Apparatus for assembling a plurality of articles
US4253280A (en) 1979-03-26 1981-03-03 Western Electric Company, Inc. Method of labelling directional characteristics of an article having two opposite major surfaces

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966848C (de) * 1952-07-29 1957-08-29 Licentia Gmbh Verfahren zum Herstellen von scharf abgegrenzten Schichten entgegengesetzten Leitfaehigkeitstyps auf einem fertigen Halbleiterkristall eines bestimmten Leitfaehigkeitstyps

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966848C (de) * 1952-07-29 1957-08-29 Licentia Gmbh Verfahren zum Herstellen von scharf abgegrenzten Schichten entgegengesetzten Leitfaehigkeitstyps auf einem fertigen Halbleiterkristall eines bestimmten Leitfaehigkeitstyps

Also Published As

Publication number Publication date
CH395186A (de) 1965-07-15
NL269817A (enExample)
GB936776A (en) 1963-09-11

Similar Documents

Publication Publication Date Title
DE1216437C2 (de) Verfahren zur herstellung einer mikrominiaturisierten integrierten halbleiterschaltungsanordnung
DE1068816B (enExample)
DE1246887B (de) Verfahren zum Verbinden der zu kontaktierenden Stelle einer Elektrode einer Halbleiteranordnung mit einem Anschlussteil
DE3930858C2 (de) Modulaufbau
EP0014761B1 (de) Kontaktsystem für Leistungs-Thyristor
EP0260471A1 (de) Leistungs-Halbleiterbauelement
DE1235435B (de) Mikrominiaturisierte elektronische Kippschaltungsanordnung
DE2601131A1 (de) Halbleitereinrichtungen vom druckkontakt-typ
DE1614250C3 (de) Halbleiteranordnung mit Gruppen von sich kreuzenden Verbindungen
DE2424251A1 (de) Darlington-schaltung
AT238256B (de) Freischwingende Kippschaltung
DE2353333C3 (de) Integrierte Darlington-Hochleistungsschaltung
DE1239871B (de) Druckempfindliche Halbleiteranordnung
DE1489193B2 (de) Verfahren zum herstellen einer halbleiteranordnung
DE1130525B (de) Flaechentransistor mit einem scheibenfoermigen Halbleiterkoerper eines bestimmten Leitungstyps
DE2855265A1 (de) Thyristor
DE1464829C3 (de) Schaltungsanordnung mit mehreren in einem Halbleiterplättchen ausgebildeten Schaltungselementen
DE1202906B (de) Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
DE2855972A1 (de) Halbleiteranordnung
DE2209518B2 (de) Zweirichtungsthyristor
DE1514886C3 (de) Halbleiteranordnung
DE1196794B (de) Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen
AT243856B (de) Baueinheit, bei der Teile eines aus einem hochisolierenden kristallinen Festkörper bestehenden Trägers durch Formgebung und physikalisch-chemische Strukturierung als Bestandteile aktiver und passiver Elemente, wie z. B. Transistoren, Dioden Widerstände und Kondensatoren, der Baueinheit ausgebildet sind
DE2108645C (de) Halbleiterbauelement
DE1764724A1 (de) Thermoelektrische Vorrichtung