CH395186A - Als freischwingende Kippschaltung ausgebildete integrierte Schaltung - Google Patents
Als freischwingende Kippschaltung ausgebildete integrierte SchaltungInfo
- Publication number
- CH395186A CH395186A CH942361A CH942361A CH395186A CH 395186 A CH395186 A CH 395186A CH 942361 A CH942361 A CH 942361A CH 942361 A CH942361 A CH 942361A CH 395186 A CH395186 A CH 395186A
- Authority
- CH
- Switzerland
- Prior art keywords
- running
- free
- integrated circuit
- toggle switch
- circuit designed
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/282—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable
- H03K3/2823—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable using two active transistor of the same conductivity type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES70813A DE1235435B (de) | 1960-10-10 | 1960-10-10 | Mikrominiaturisierte elektronische Kippschaltungsanordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH395186A true CH395186A (de) | 1965-07-15 |
Family
ID=7502045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH942361A CH395186A (de) | 1960-10-10 | 1961-08-11 | Als freischwingende Kippschaltung ausgebildete integrierte Schaltung |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH395186A (enExample) |
| DE (1) | DE1235435B (enExample) |
| GB (1) | GB936776A (enExample) |
| NL (1) | NL269817A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4235014A (en) | 1979-03-26 | 1980-11-25 | Western Electric Company, Inc. | Apparatus for assembling a plurality of articles |
| US4253280A (en) | 1979-03-26 | 1981-03-03 | Western Electric Company, Inc. | Method of labelling directional characteristics of an article having two opposite major surfaces |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE966848C (de) * | 1952-07-29 | 1957-08-29 | Licentia Gmbh | Verfahren zum Herstellen von scharf abgegrenzten Schichten entgegengesetzten Leitfaehigkeitstyps auf einem fertigen Halbleiterkristall eines bestimmten Leitfaehigkeitstyps |
-
0
- NL NL269817D patent/NL269817A/xx unknown
-
1960
- 1960-10-10 DE DES70813A patent/DE1235435B/de active Pending
-
1961
- 1961-08-11 CH CH942361A patent/CH395186A/de unknown
- 1961-10-10 GB GB36327/61A patent/GB936776A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL269817A (enExample) | |
| GB936776A (en) | 1963-09-11 |
| DE1235435B (de) | 1967-03-02 |
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