DE1218065B - Verfahren zur Herstellung eines Halbleiter-bauelementes - Google Patents
Verfahren zur Herstellung eines Halbleiter-bauelementesInfo
- Publication number
- DE1218065B DE1218065B DE1964N0025433 DEN0025433A DE1218065B DE 1218065 B DE1218065 B DE 1218065B DE 1964N0025433 DE1964N0025433 DE 1964N0025433 DE N0025433 A DEN0025433 A DE N0025433A DE 1218065 B DE1218065 B DE 1218065B
- Authority
- DE
- Germany
- Prior art keywords
- gallium
- electrode
- semiconductor
- electrodes
- semiconductor surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 51
- 229910052733 gallium Inorganic materials 0.000 claims description 51
- 238000005275 alloying Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL297451 | 1963-09-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1218065B true DE1218065B (de) | 1966-06-02 |
Family
ID=8837444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1964N0025433 Pending DE1218065B (de) | 1963-09-03 | 1964-08-29 | Verfahren zur Herstellung eines Halbleiter-bauelementes |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1218065B (enrdf_load_stackoverflow) |
| FR (1) | FR1405186A (enrdf_load_stackoverflow) |
| NL (1) | NL297451A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1146203B (de) * | 1958-01-17 | 1963-03-28 | Philips Nv | Verfahren zum Abtragen von Material von einem Halbleiterkoerper eines Halbleiter-bauelementes, z. B. eines Transistors oder einer Kristalldiode, durch Einwirkung eines strahlenfoermig aufgebrachten Abtragungsmittels |
-
1963
- 1963-09-03 NL NL297451D patent/NL297451A/nl unknown
-
1964
- 1964-08-28 FR FR986563A patent/FR1405186A/fr not_active Expired
- 1964-08-29 DE DE1964N0025433 patent/DE1218065B/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1146203B (de) * | 1958-01-17 | 1963-03-28 | Philips Nv | Verfahren zum Abtragen von Material von einem Halbleiterkoerper eines Halbleiter-bauelementes, z. B. eines Transistors oder einer Kristalldiode, durch Einwirkung eines strahlenfoermig aufgebrachten Abtragungsmittels |
Also Published As
| Publication number | Publication date |
|---|---|
| NL297451A (enrdf_load_stackoverflow) | 1965-11-10 |
| FR1405186A (fr) | 1965-07-02 |
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