DE1209660B - Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps - Google Patents

Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Info

Publication number
DE1209660B
DE1209660B DES79974A DES0079974A DE1209660B DE 1209660 B DE1209660 B DE 1209660B DE S79974 A DES79974 A DE S79974A DE S0079974 A DES0079974 A DE S0079974A DE 1209660 B DE1209660 B DE 1209660B
Authority
DE
Germany
Prior art keywords
zone
zones
semiconductor
semiconductor body
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DES79974A
Other languages
German (de)
English (en)
Other versions
DE1209660C2 (enrdf_load_stackoverflow
Inventor
Dr-Ing Hubert Patalong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL290680D priority Critical patent/NL290680A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES79974A priority patent/DE1209660B/de
Priority to CH147963A priority patent/CH396229A/de
Priority to FR938371A priority patent/FR1415513A/fr
Priority to GB24156/63A priority patent/GB1037804A/en
Priority to SE6842/63A priority patent/SE301192B/xx
Publication of DE1209660B publication Critical patent/DE1209660B/de
Application granted granted Critical
Publication of DE1209660C2 publication Critical patent/DE1209660C2/de
Priority to US601219A priority patent/US3392313A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DES79974A 1962-06-19 1962-06-19 Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps Granted DE1209660B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL290680D NL290680A (enrdf_load_stackoverflow) 1962-06-19
DES79974A DE1209660B (de) 1962-06-19 1962-06-19 Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps
CH147963A CH396229A (de) 1962-06-19 1963-02-06 Halbleiter-Bauelement mit einem im wesentlichen einkristallinen Halbleiterkörper und vier Zonen abwechselnden Leitfähigkeitstyps
FR938371A FR1415513A (fr) 1962-06-19 1963-06-17 Composant semi-conducteur comportant un corps semi-conducteur essentiellement monocristallin et quatre zones d'un type alternant de conductivité
GB24156/63A GB1037804A (en) 1962-06-19 1963-06-18 A four-layer semiconductor component element
SE6842/63A SE301192B (enrdf_load_stackoverflow) 1962-06-19 1963-06-19
US601219A US3392313A (en) 1962-06-19 1966-12-12 Semiconductor device of the four-layer type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES79974A DE1209660B (de) 1962-06-19 1962-06-19 Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Publications (2)

Publication Number Publication Date
DE1209660B true DE1209660B (de) 1966-01-27
DE1209660C2 DE1209660C2 (enrdf_load_stackoverflow) 1966-10-13

Family

ID=7508574

Family Applications (1)

Application Number Title Priority Date Filing Date
DES79974A Granted DE1209660B (de) 1962-06-19 1962-06-19 Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Country Status (7)

Country Link
US (1) US3392313A (enrdf_load_stackoverflow)
CH (1) CH396229A (enrdf_load_stackoverflow)
DE (1) DE1209660B (enrdf_load_stackoverflow)
FR (1) FR1415513A (enrdf_load_stackoverflow)
GB (1) GB1037804A (enrdf_load_stackoverflow)
NL (1) NL290680A (enrdf_load_stackoverflow)
SE (1) SE301192B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1291321A (fr) * 1960-06-10 1962-04-20 Thomson Houston Comp Francaise Perfectionnements aux semi-conducteurs et à leur fabrication

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959681A (en) * 1959-06-18 1960-11-08 Fairchild Semiconductor Semiconductor scanning device
NL264084A (enrdf_load_stackoverflow) * 1959-06-23
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
NL129185C (enrdf_load_stackoverflow) * 1960-06-10
BE623187A (enrdf_load_stackoverflow) * 1961-10-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1291321A (fr) * 1960-06-10 1962-04-20 Thomson Houston Comp Francaise Perfectionnements aux semi-conducteurs et à leur fabrication

Also Published As

Publication number Publication date
GB1037804A (en) 1966-08-03
US3392313A (en) 1968-07-09
SE301192B (enrdf_load_stackoverflow) 1968-05-27
CH396229A (de) 1965-07-31
NL290680A (enrdf_load_stackoverflow)
FR1415513A (fr) 1965-10-29
DE1209660C2 (enrdf_load_stackoverflow) 1966-10-13

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