GB1037804A - A four-layer semiconductor component element - Google Patents

A four-layer semiconductor component element

Info

Publication number
GB1037804A
GB1037804A GB24156/63A GB2415663A GB1037804A GB 1037804 A GB1037804 A GB 1037804A GB 24156/63 A GB24156/63 A GB 24156/63A GB 2415663 A GB2415663 A GB 2415663A GB 1037804 A GB1037804 A GB 1037804A
Authority
GB
United Kingdom
Prior art keywords
zone
diffusion
electrode
aluminium
provides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24156/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1037804A publication Critical patent/GB1037804A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)

Abstract

1,037,804. Solid state devices. SIEMENSSCHUCKERTWERKE A.G. June 18, 1963 [June 19, 1962], No. 24156/63. Heading H1K. In a series PNPN structure the shortest distance, as measured on the surface of the semi-conductor body, between an end zone and the junction between the next two zones is at least 20 times as great as the diffusion length, at the surface of the body, of the minority carriers in the zone adacent the said end-zone. In one embodiment (Fig. 1) a disc of N-type silicon 2 is subjected to surface diffusion of aluminium to produce a P-type zone, and by etching or mechanical grinding a pit 5 is formed which subdivides this zone into two regions 3 and 4. The diffusion process and etch procedures are described in detail in the Specification. An aluminium foil 6 alloyed to the region 3 provides an electrode therefor and a goldantimony annular disc alloyed to the zone 4 provides a further N-type zone 7 and also electrode 8. A further foil 9 containing gold and boron is added to the assembly and provides a further electrode; the assembly is then heated to about 800‹ C. in a furnace. In a further embodiment (Fig. 2, not shown) after the aluminium diffusion step the whole disc is provided with a silicon oxide layer and a ring- shaped region thereof on the body surface is subsequently removed. A boron diffusion is then effected in this oxide free region to reduce the diffusion length of the minority carriers in the surface layer of the zone 4.
GB24156/63A 1962-06-19 1963-06-18 A four-layer semiconductor component element Expired GB1037804A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES79974A DE1209660B (en) 1962-06-19 1962-06-19 Controllable semiconductor component with an essentially monocrystalline semiconductor body and four zones of alternating conductivity type

Publications (1)

Publication Number Publication Date
GB1037804A true GB1037804A (en) 1966-08-03

Family

ID=7508574

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24156/63A Expired GB1037804A (en) 1962-06-19 1963-06-18 A four-layer semiconductor component element

Country Status (7)

Country Link
US (1) US3392313A (en)
CH (1) CH396229A (en)
DE (1) DE1209660B (en)
FR (1) FR1415513A (en)
GB (1) GB1037804A (en)
NL (1) NL290680A (en)
SE (1) SE301192B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3832709A1 (en) * 1988-09-27 1990-03-29 Asea Brown Boveri THYRISTOR

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959681A (en) * 1959-06-18 1960-11-08 Fairchild Semiconductor Semiconductor scanning device
NL264084A (en) * 1959-06-23
DE1103389B (en) * 1959-10-14 1961-03-30 Siemens Ag Switching arrangement with a four-layer semiconductor arrangement
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1133038B (en) * 1960-05-10 1962-07-12 Siemens Ag Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type
NL268728A (en) * 1960-06-10
NL129185C (en) * 1960-06-10
BE623187A (en) * 1961-10-06

Also Published As

Publication number Publication date
CH396229A (en) 1965-07-31
DE1209660B (en) 1966-01-27
FR1415513A (en) 1965-10-29
US3392313A (en) 1968-07-09
DE1209660C2 (en) 1966-10-13
NL290680A (en)
SE301192B (en) 1968-05-27

Similar Documents

Publication Publication Date Title
GB956286A (en) Inverter circuits
GB1138237A (en) Guard junctions for p-n junction semiconductor devices
SE7603557L (en) WAY TO MANUFACTURE A SEMICONDUCTOR DEVICE
GB1271035A (en) Processes for forming semiconductor devices and individual semiconductor bodies from a single wafer
GB1270697A (en) Methods of forming semiconductor devices
GB1357432A (en) Semiconductor devices
GB902559A (en) A process for use in the production of a semi-conductor device
GB1081376A (en) Method of producing a semiconductor device
GB1037804A (en) A four-layer semiconductor component element
GB1128480A (en) High voltage semiconductor device with electrical gradient-reducing groove
GB1150934A (en) Improvements in and relating to semiconductor devices.
US2813817A (en) Semiconductor devices and their manufacture
GB940681A (en) Semiconductor devices
GB1177540A (en) Improvements in or relating to Transistors
GB1158585A (en) Gate Controlled Switches
GB1399526A (en) Semiconductor device
GB1069467A (en) Improvements in and relating to methods of masking
GB1110321A (en) Improvements in or relating to semiconductor devices
GB964431A (en) Improvements in or relating to transistors
GB1073707A (en) A pnpn semi-conductor component
FR2080639B1 (en)
JPS5235584A (en) Manufacturing process of semiconductor device
GB1068200A (en) High voltage semiconductor device
GB1033838A (en) Production of pn-junctions
GB1160429A (en) Improvements in and relating to Semiconductive Devices.