GB1037804A - A four-layer semiconductor component element - Google Patents
A four-layer semiconductor component elementInfo
- Publication number
- GB1037804A GB1037804A GB24156/63A GB2415663A GB1037804A GB 1037804 A GB1037804 A GB 1037804A GB 24156/63 A GB24156/63 A GB 24156/63A GB 2415663 A GB2415663 A GB 2415663A GB 1037804 A GB1037804 A GB 1037804A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- diffusion
- electrode
- aluminium
- provides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000005030 aluminium foil Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES79974A DE1209660B (de) | 1962-06-19 | 1962-06-19 | Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1037804A true GB1037804A (en) | 1966-08-03 |
Family
ID=7508574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24156/63A Expired GB1037804A (en) | 1962-06-19 | 1963-06-18 | A four-layer semiconductor component element |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3392313A (enrdf_load_stackoverflow) |
| CH (1) | CH396229A (enrdf_load_stackoverflow) |
| DE (1) | DE1209660B (enrdf_load_stackoverflow) |
| FR (1) | FR1415513A (enrdf_load_stackoverflow) |
| GB (1) | GB1037804A (enrdf_load_stackoverflow) |
| NL (1) | NL290680A (enrdf_load_stackoverflow) |
| SE (1) | SE301192B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2959681A (en) * | 1959-06-18 | 1960-11-08 | Fairchild Semiconductor | Semiconductor scanning device |
| NL252855A (enrdf_load_stackoverflow) * | 1959-06-23 | |||
| DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
| US3175934A (en) * | 1960-01-19 | 1965-03-30 | Hitachi Ltd | Semiconductor switching element and process for producing the same |
| DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
| NL129185C (enrdf_load_stackoverflow) * | 1960-06-10 | |||
| NL268728A (enrdf_load_stackoverflow) * | 1960-06-10 | |||
| BE623187A (enrdf_load_stackoverflow) * | 1961-10-06 |
-
0
- NL NL290680D patent/NL290680A/xx unknown
-
1962
- 1962-06-19 DE DES79974A patent/DE1209660B/de active Granted
-
1963
- 1963-02-06 CH CH147963A patent/CH396229A/de unknown
- 1963-06-17 FR FR938371A patent/FR1415513A/fr not_active Expired
- 1963-06-18 GB GB24156/63A patent/GB1037804A/en not_active Expired
- 1963-06-19 SE SE6842/63A patent/SE301192B/xx unknown
-
1966
- 1966-12-12 US US601219A patent/US3392313A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CH396229A (de) | 1965-07-31 |
| FR1415513A (fr) | 1965-10-29 |
| SE301192B (enrdf_load_stackoverflow) | 1968-05-27 |
| US3392313A (en) | 1968-07-09 |
| NL290680A (enrdf_load_stackoverflow) | |
| DE1209660B (de) | 1966-01-27 |
| DE1209660C2 (enrdf_load_stackoverflow) | 1966-10-13 |
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