DE1207013B - Mikrominiaturisierte integrierte Halbleiter-schaltungsanordnung und Verfahren zu deren Herstellung - Google Patents

Mikrominiaturisierte integrierte Halbleiter-schaltungsanordnung und Verfahren zu deren Herstellung

Info

Publication number
DE1207013B
DE1207013B DET18342A DET0018342A DE1207013B DE 1207013 B DE1207013 B DE 1207013B DE T18342 A DET18342 A DE T18342A DE T0018342 A DET0018342 A DE T0018342A DE 1207013 B DE1207013 B DE 1207013B
Authority
DE
Germany
Prior art keywords
semiconductor
circuit arrangement
layers
zones
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DET18342A
Other languages
German (de)
English (en)
Inventor
Jack St Clair Kilby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1207013B publication Critical patent/DE1207013B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
DET18342A 1959-05-06 1960-05-06 Mikrominiaturisierte integrierte Halbleiter-schaltungsanordnung und Verfahren zu deren Herstellung Pending DE1207013B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US81147659A 1959-05-06 1959-05-06
US21820662A 1962-08-14 1962-08-14
US611363A US3340406A (en) 1959-05-06 1967-01-24 Integrated semiconductive circuit structure

Publications (1)

Publication Number Publication Date
DE1207013B true DE1207013B (de) 1965-12-16

Family

ID=27396510

Family Applications (2)

Application Number Title Priority Date Filing Date
DET18342A Pending DE1207013B (de) 1959-05-06 1960-05-06 Mikrominiaturisierte integrierte Halbleiter-schaltungsanordnung und Verfahren zu deren Herstellung
DET29251A Pending DE1288200B (de) 1959-05-06 1960-05-06 Integrierte Halbleiterschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DET29251A Pending DE1288200B (de) 1959-05-06 1960-05-06 Integrierte Halbleiterschaltung

Country Status (6)

Country Link
US (1) US3340406A (https=)
JP (3) JPS5247313B1 (https=)
DE (2) DE1207013B (https=)
FR (1) FR1327717A (https=)
GB (7) GB958249A (https=)
MY (7) MY6900314A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1162109A (en) * 1966-12-22 1969-08-20 Ibm Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices
US3573573A (en) * 1968-12-23 1971-04-06 Ibm Memory cell with buried load impedances
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
US4963176A (en) * 1989-10-06 1990-10-16 Ppg Industries, Inc. Method for making glass fiber mats using controllable fiber glass strand feeders

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2776381A (en) * 1952-01-25 1957-01-01 Bell Telephone Labor Inc Multielectrode semiconductor circuit element
US2791759A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive device
DE1011081B (de) * 1953-08-18 1957-06-27 Siemens Ag Zu einem Bauelement zusammengefasste Widerstandskondensator-Kombination

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE519804A (https=) * 1952-05-09
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2897377A (en) * 1955-06-20 1959-07-28 Rca Corp Semiconductor surface treatments and devices made thereby
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device
NL121810C (https=) * 1955-11-04
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
BE556305A (https=) * 1956-04-18
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
DE1063279B (de) 1957-05-31 1959-08-13 Ibm Deutschland Halbleiteranordnung aus einem Halbleiterkoerper mit flaechenhaftem innerem pn-UEbergang und mit mehr als drei Elektroden
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US2964648A (en) * 1958-12-24 1960-12-13 Bell Telephone Labor Inc Semiconductor capacitor
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker
US2776381A (en) * 1952-01-25 1957-01-01 Bell Telephone Labor Inc Multielectrode semiconductor circuit element
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
DE1011081B (de) * 1953-08-18 1957-06-27 Siemens Ag Zu einem Bauelement zusammengefasste Widerstandskondensator-Kombination
US2791759A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive device

Also Published As

Publication number Publication date
MY6900311A (en) 1969-12-31
JPS5247314B1 (https=) 1977-12-01
GB958246A (en) 1964-05-21
GB958244A (en) 1964-05-21
MY6900305A (en) 1969-12-31
MY6900310A (en) 1969-12-31
JPS5326118B1 (https=) 1978-07-31
MY6900318A (en) 1969-12-31
GB958247A (en) 1964-05-21
GB958245A (en) 1964-05-21
US3340406A (en) 1967-09-05
FR1327717A (fr) 1963-05-24
DE1288200B (de) 1969-01-30
GB958249A (en) 1964-05-21
JPS5247313B1 (https=) 1977-12-01
MY6900314A (en) 1969-12-31
MY6900316A (en) 1969-12-31
GB958248A (en) 1964-05-21
GB958242A (en) 1964-05-21
MY6900312A (en) 1969-12-31

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