DE1194505B - Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung - Google Patents
Halbleiterbauelement zur elektrischen Verstaerkung und SteuerungInfo
- Publication number
- DE1194505B DE1194505B DET17211A DET0017211A DE1194505B DE 1194505 B DE1194505 B DE 1194505B DE T17211 A DET17211 A DE T17211A DE T0017211 A DET0017211 A DE T0017211A DE 1194505 B DE1194505 B DE 1194505B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- component according
- semiconductor
- ohmic
- junctions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 230000003321 amplification Effects 0.000 title claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 title claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL255886D NL255886A (US07714131-20100511-C00038.png) | 1959-09-15 | ||
| DET17211A DE1194505B (de) | 1959-09-15 | 1959-09-15 | Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung |
| US55439A US3142020A (en) | 1959-09-15 | 1960-09-12 | Semiconductor arrangement having lattice faults in its breakdown region |
| GB31743/60A GB968588A (en) | 1959-09-15 | 1960-09-15 | Improved semiconductor arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET17211A DE1194505B (de) | 1959-09-15 | 1959-09-15 | Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1194505B true DE1194505B (de) | 1965-06-10 |
Family
ID=7548510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET17211A Pending DE1194505B (de) | 1959-09-15 | 1959-09-15 | Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3142020A (US07714131-20100511-C00038.png) |
| DE (1) | DE1194505B (US07714131-20100511-C00038.png) |
| GB (1) | GB968588A (US07714131-20100511-C00038.png) |
| NL (1) | NL255886A (US07714131-20100511-C00038.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328605A (en) * | 1964-09-30 | 1967-06-27 | Abraham George | Multiple avalanche device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2790034A (en) * | 1953-03-05 | 1957-04-23 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2651831A (en) * | 1950-07-24 | 1953-09-15 | Bell Telephone Labor Inc | Semiconductor translating device |
| DE970420C (de) * | 1951-03-10 | 1958-09-18 | Siemens Ag | Elektrisches Halbleitergeraet |
| US2644895A (en) * | 1952-07-01 | 1953-07-07 | Rca Corp | Monostable transistor triggered circuits |
| US2764642A (en) * | 1952-10-31 | 1956-09-25 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2750453A (en) * | 1952-11-06 | 1956-06-12 | Gen Electric | Direct current amplifier |
| US2795742A (en) * | 1952-12-12 | 1957-06-11 | Bell Telephone Labor Inc | Semiconductive translating devices utilizing selected natural grain boundaries |
| US2802071A (en) * | 1954-03-31 | 1957-08-06 | Rca Corp | Stabilizing means for semi-conductor circuits |
-
0
- NL NL255886D patent/NL255886A/xx unknown
-
1959
- 1959-09-15 DE DET17211A patent/DE1194505B/de active Pending
-
1960
- 1960-09-12 US US55439A patent/US3142020A/en not_active Expired - Lifetime
- 1960-09-15 GB GB31743/60A patent/GB968588A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2790034A (en) * | 1953-03-05 | 1957-04-23 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
Also Published As
| Publication number | Publication date |
|---|---|
| GB968588A (en) | 1964-09-02 |
| US3142020A (en) | 1964-07-21 |
| NL255886A (US07714131-20100511-C00038.png) |
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