DE1186556B - Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen - Google Patents
Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum HerstellenInfo
- Publication number
- DE1186556B DE1186556B DES69707A DES0069707A DE1186556B DE 1186556 B DE1186556 B DE 1186556B DE S69707 A DES69707 A DE S69707A DE S0069707 A DES0069707 A DE S0069707A DE 1186556 B DE1186556 B DE 1186556B
- Authority
- DE
- Germany
- Prior art keywords
- junction
- esaki
- tunneling
- diode
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000005641 tunneling Effects 0.000 claims description 15
- 238000005275 alloying Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 239000007858 starting material Substances 0.000 claims 2
- 230000010355 oscillation Effects 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
- H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL264058D NL264058A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1960-07-30 | ||
| DES69707A DE1186556B (de) | 1960-07-30 | 1960-07-30 | Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen |
| CH373361A CH391900A (de) | 1960-07-30 | 1961-03-29 | Tunnel-Diode mit Parallelkapazität |
| FR864648A FR1296784A (fr) | 1960-07-30 | 1961-06-12 | Diode tunnel avec capacité en parallèle |
| US125548A US3292055A (en) | 1960-07-30 | 1961-07-20 | Tunnel diode with parallel capacitance |
| GB27774/61A GB969530A (en) | 1960-07-30 | 1961-07-31 | A tunnel diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES69707A DE1186556B (de) | 1960-07-30 | 1960-07-30 | Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1186556B true DE1186556B (de) | 1965-02-04 |
| DE1186556C2 DE1186556C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-09-30 |
Family
ID=7501175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES69707A Granted DE1186556B (de) | 1960-07-30 | 1960-07-30 | Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen |
Country Status (6)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994003850A3 (en) * | 1992-08-06 | 1994-05-11 | Bootstrapped current and voltage reference circuit utilizing an n-type negative resistance device | |
| US5384530A (en) * | 1992-08-06 | 1995-01-24 | Massachusetts Institute Of Technology | Bootstrap voltage reference circuit utilizing an N-type negative resistance device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU172271U1 (ru) * | 2016-11-18 | 2017-07-03 | Федеральное государственное автономное образовательное учреждение высшего образования "Северо-Восточный федеральный университет имени М.К.Аммосова" | Установка для динамического измерения вольт-амперной характеристики туннельных диодов |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
| NL250955A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1959-08-05 | |||
| US3114864A (en) * | 1960-02-08 | 1963-12-17 | Fairchild Camera Instr Co | Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions |
-
0
- NL NL264058D patent/NL264058A/xx unknown
-
1960
- 1960-07-30 DE DES69707A patent/DE1186556B/de active Granted
-
1961
- 1961-03-29 CH CH373361A patent/CH391900A/de unknown
- 1961-06-12 FR FR864648A patent/FR1296784A/fr not_active Expired
- 1961-07-20 US US125548A patent/US3292055A/en not_active Expired - Lifetime
- 1961-07-31 GB GB27774/61A patent/GB969530A/en not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994003850A3 (en) * | 1992-08-06 | 1994-05-11 | Bootstrapped current and voltage reference circuit utilizing an n-type negative resistance device | |
| US5384530A (en) * | 1992-08-06 | 1995-01-24 | Massachusetts Institute Of Technology | Bootstrap voltage reference circuit utilizing an N-type negative resistance device |
Also Published As
| Publication number | Publication date |
|---|---|
| CH391900A (de) | 1965-05-15 |
| DE1186556C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-09-30 |
| GB969530A (en) | 1964-09-09 |
| US3292055A (en) | 1966-12-13 |
| FR1296784A (fr) | 1962-06-22 |
| NL264058A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
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