FR1296784A - Diode tunnel avec capacité en parallèle - Google Patents

Diode tunnel avec capacité en parallèle

Info

Publication number
FR1296784A
FR1296784A FR864648A FR864648A FR1296784A FR 1296784 A FR1296784 A FR 1296784A FR 864648 A FR864648 A FR 864648A FR 864648 A FR864648 A FR 864648A FR 1296784 A FR1296784 A FR 1296784A
Authority
FR
France
Prior art keywords
tunnel diode
parallel capacitance
capacitance
parallel
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR864648A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1296784A publication Critical patent/FR1296784A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR864648A 1960-07-30 1961-06-12 Diode tunnel avec capacité en parallèle Expired FR1296784A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES69707A DE1186556B (de) 1960-07-30 1960-07-30 Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen

Publications (1)

Publication Number Publication Date
FR1296784A true FR1296784A (fr) 1962-06-22

Family

ID=7501175

Family Applications (1)

Application Number Title Priority Date Filing Date
FR864648A Expired FR1296784A (fr) 1960-07-30 1961-06-12 Diode tunnel avec capacité en parallèle

Country Status (6)

Country Link
US (1) US3292055A (fr)
CH (1) CH391900A (fr)
DE (1) DE1186556B (fr)
FR (1) FR1296784A (fr)
GB (1) GB969530A (fr)
NL (1) NL264058A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994003850A2 (fr) * 1992-08-06 1994-02-17 Massachusetts Institute Of Technology Circuit de reference de tension et courant amplifie a contre-reaction utilisant un dispositif a resistance negative de type n
US5384530A (en) * 1992-08-06 1995-01-24 Massachusetts Institute Of Technology Bootstrap voltage reference circuit utilizing an N-type negative resistance device
RU172271U1 (ru) * 2016-11-18 2017-07-03 Федеральное государственное автономное образовательное учреждение высшего образования "Северо-Восточный федеральный университет имени М.К.Аммосова" Установка для динамического измерения вольт-амперной характеристики туннельных диодов

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937114A (en) * 1959-05-29 1960-05-17 Shockley Transistor Corp Semiconductive device and method
NL135881C (fr) * 1959-08-05
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions

Also Published As

Publication number Publication date
CH391900A (de) 1965-05-15
GB969530A (en) 1964-09-09
DE1186556C2 (fr) 1965-09-30
DE1186556B (de) 1965-02-04
US3292055A (en) 1966-12-13
NL264058A (fr)

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