DE1160550B - Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb - Google Patents

Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb

Info

Publication number
DE1160550B
DE1160550B DEST17146A DEST017146A DE1160550B DE 1160550 B DE1160550 B DE 1160550B DE ST17146 A DEST17146 A DE ST17146A DE ST017146 A DEST017146 A DE ST017146A DE 1160550 B DE1160550 B DE 1160550B
Authority
DE
Germany
Prior art keywords
tunnel diode
contact electrode
characteristic
zones
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DEST17146A
Other languages
German (de)
English (en)
Other versions
DE1160550C2 (me
Inventor
Dipl-Phys Dr Micha Michelitsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent Deutschland AG
Original Assignee
Standard Elektrik Lorenz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Elektrik Lorenz AG filed Critical Standard Elektrik Lorenz AG
Priority to DEST17146A priority Critical patent/DE1160550B/de
Priority to FR879844A priority patent/FR1310792A/fr
Priority to FR898800A priority patent/FR82217E/fr
Publication of DE1160550B publication Critical patent/DE1160550B/de
Application granted granted Critical
Publication of DE1160550C2 publication Critical patent/DE1160550C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DEST17146A 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb Granted DE1160550B (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DEST17146A DE1160550B (de) 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb
FR879844A FR1310792A (fr) 1960-11-23 1961-11-23 Diodes tunnel ou organes semi-conducteurs analogues
FR898800A FR82217E (fr) 1960-11-23 1962-05-25 Diodes tunnel ou organes semi-conducteurs analogues

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEST17146A DE1160550B (de) 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb

Publications (2)

Publication Number Publication Date
DE1160550B true DE1160550B (de) 1964-01-02
DE1160550C2 DE1160550C2 (me) 1964-07-16

Family

ID=37438030

Family Applications (1)

Application Number Title Priority Date Filing Date
DEST17146A Granted DE1160550B (de) 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb

Country Status (1)

Country Link
DE (1) DE1160550B (me)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor

Also Published As

Publication number Publication date
DE1160550C2 (me) 1964-07-16

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