DE1144846B - Verfahren zur Herstellung und zur Erhoehung der Oberflaechenleitfaehigkeit elektrisch leitender Filme sowie zur schichtweisen AEnderung des Leitungstyps fuer n- und p-Schichten, insbesondere fuer elektrolumineszente Flaechenlampen und Photozellen - Google Patents

Verfahren zur Herstellung und zur Erhoehung der Oberflaechenleitfaehigkeit elektrisch leitender Filme sowie zur schichtweisen AEnderung des Leitungstyps fuer n- und p-Schichten, insbesondere fuer elektrolumineszente Flaechenlampen und Photozellen

Info

Publication number
DE1144846B
DE1144846B DEG32055A DEG0032055A DE1144846B DE 1144846 B DE1144846 B DE 1144846B DE G32055 A DEG32055 A DE G32055A DE G0032055 A DEG0032055 A DE G0032055A DE 1144846 B DE1144846 B DE 1144846B
Authority
DE
Germany
Prior art keywords
layer
conductive
zinc
film
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEG32055A
Other languages
German (de)
English (en)
Inventor
Dominic Anthony Cusano
Richard Leslie Sormberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1144846B publication Critical patent/DE1144846B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18—Luminescent screens
    • H01J29/28—Luminescent screens with protective, conductive or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/22—Applying luminescent coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/251—Al, Cu, Mg or noble metals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers
    • Y10T428/31696—Including polyene monomers [e.g., butadiene, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Conductive Materials (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
DEG32055A 1960-04-14 1961-04-13 Verfahren zur Herstellung und zur Erhoehung der Oberflaechenleitfaehigkeit elektrisch leitender Filme sowie zur schichtweisen AEnderung des Leitungstyps fuer n- und p-Schichten, insbesondere fuer elektrolumineszente Flaechenlampen und Photozellen Pending DE1144846B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2224860A 1960-04-14 1960-04-14
US22247A US3095324A (en) 1960-04-14 1960-04-14 Method for making electrically conducting films and article

Publications (1)

Publication Number Publication Date
DE1144846B true DE1144846B (de) 1963-03-07

Family

ID=65900815

Family Applications (1)

Application Number Title Priority Date Filing Date
DEG32055A Pending DE1144846B (de) 1960-04-14 1961-04-13 Verfahren zur Herstellung und zur Erhoehung der Oberflaechenleitfaehigkeit elektrisch leitender Filme sowie zur schichtweisen AEnderung des Leitungstyps fuer n- und p-Schichten, insbesondere fuer elektrolumineszente Flaechenlampen und Photozellen

Country Status (4)

Country Link
US (2) US3095324A (en:Method)
JP (1) JPS4119937B1 (en:Method)
DE (1) DE1144846B (en:Method)
GB (1) GB987866A (en:Method)

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US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
US3214272A (en) * 1960-05-10 1965-10-26 Method of recording still optical images by means of a photocondugtive layer using thermoplastic imagewise deformation of the image layer
US3376163A (en) * 1961-08-11 1968-04-02 Itek Corp Photosensitive cell
US3203836A (en) * 1961-08-29 1965-08-31 Gen Electric Method for the preparation of copper sulfide films and products obtained thereby
US3189481A (en) * 1961-08-29 1965-06-15 Gen Electric Method for the preparation of copper sulfide films and products obtained thereby
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
BE631700A (en:Method) * 1962-04-30
US3196009A (en) * 1962-05-08 1965-07-20 Xerox Co Electrostatic image liquid deformation development
US3258336A (en) * 1962-05-08 1966-06-28 Xerox Corp Strippable layer frost printing
BE631983A (en:Method) * 1962-05-08
US3238041A (en) * 1962-05-08 1966-03-01 Xerox Co Relief imaging of photoresponsive member and product
CH451338A (de) * 1962-10-13 1968-05-15 Bayer Ag Fotoleitendes Bauelement aus Cadmiumsulfid und/oder -selenid enthaltendem Material und Verfahren zu dessen Herstellung
US3181172A (en) * 1962-12-26 1965-04-27 Ampex Storage media
US3373059A (en) * 1963-10-24 1968-03-12 Cievite Corp Method of making photosensitive elements
FR1409894A (fr) * 1964-07-23 1965-09-03 Electronique & Automatisme Sa Dispositif opto-électronique perfectionné
US3366517A (en) * 1964-09-23 1968-01-30 Ibm Formation of semiconductor devices
FR1450654A (fr) * 1965-07-01 1966-06-24 Radiotechnique Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes
US3520732A (en) * 1965-10-22 1970-07-14 Matsushita Electric Industrial Co Ltd Photovoltaic cell and process of preparation of same
US3416956A (en) * 1966-05-16 1968-12-17 Kewanee Oil Co Process for forming a barrier in a cadmium sulfide solar cell
US3720835A (en) * 1967-02-24 1973-03-13 Us Army Scanning infrared radiation sensor
US3541375A (en) * 1967-06-07 1970-11-17 Gen Electric Barrier layer electroluminescent devices
US3443170A (en) * 1968-02-09 1969-05-06 Charles F Pulvari Ohmic contact to a substrate of insulating material having a doped semiconductive oxide providing a stepped energy gap
CA918297A (en) * 1969-09-24 1973-01-02 Tanimura Shigeru Semiconductor device and method of making
US3836399A (en) * 1970-02-16 1974-09-17 Texas Instruments Inc PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg
US3755002A (en) * 1971-04-14 1973-08-28 Hitachi Ltd Method of making photoconductive film
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US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3902920A (en) * 1972-11-03 1975-09-02 Baldwin Co D H Photovoltaic cell
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US4425194A (en) 1976-06-08 1984-01-10 Monosolar, Inc. Photo-voltaic power generating means and methods
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
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DE3415712A1 (de) * 1984-04-27 1985-11-07 Bloss, Werner Heinz, Prof. Dr.-Ing., 7065 Winterbach Duennschicht-fotoelement
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
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Publication number Priority date Publication date Assignee Title
DE929390C (de) * 1953-11-07 1955-06-27 Pittsburgh Plate Glass Co Verfahren zur Herstellung von im wesentlichen truebungsfreiem Glas mit einem transparenten, elektrisch leitenden UEberzug
DE944387C (de) * 1953-05-05 1956-06-14 Csf Stromelektrolumineszenz-Lichtquelle
DE1002464B (de) 1951-11-23 1957-02-14 Gen Electric Elektrolumineszierende Lichtquelle
DE1048346B (en:Method) 1959-01-08
DE1052563B (de) 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen
DE1067124B (en:Method) 1959-10-15
DE1103420B (de) 1953-12-18 1961-03-30 Maria Steiner Geb Fuessel Verfahren zur Herstellung duennster dielektrischer bzw. duennster leitender Schichten, insbesondere fuer Kondensatoren und Kabel

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US2685530A (en) * 1952-08-01 1954-08-03 Gen Electric Method of preparing transparent luminescent screens
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2817799A (en) * 1953-11-25 1957-12-24 Rca Corp Semi-conductor devices employing cadmium telluride
GB788659A (en) * 1954-08-17 1958-01-08 Gen Electric Co Ltd Improvements in or relating to electroluminescent devices
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2898226A (en) * 1957-12-31 1959-08-04 Sylvania Electric Prod Image display
US3082131A (en) * 1959-01-16 1963-03-19 Texas Instruments Inc Versatile transistor structure
US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
US3121808A (en) * 1961-09-14 1964-02-18 Bell Telephone Labor Inc Low temperature negative resistance device

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Publication number Priority date Publication date Assignee Title
DE1048346B (en:Method) 1959-01-08
DE1067124B (en:Method) 1959-10-15
DE1002464B (de) 1951-11-23 1957-02-14 Gen Electric Elektrolumineszierende Lichtquelle
DE944387C (de) * 1953-05-05 1956-06-14 Csf Stromelektrolumineszenz-Lichtquelle
DE929390C (de) * 1953-11-07 1955-06-27 Pittsburgh Plate Glass Co Verfahren zur Herstellung von im wesentlichen truebungsfreiem Glas mit einem transparenten, elektrisch leitenden UEberzug
DE1103420B (de) 1953-12-18 1961-03-30 Maria Steiner Geb Fuessel Verfahren zur Herstellung duennster dielektrischer bzw. duennster leitender Schichten, insbesondere fuer Kondensatoren und Kabel
DE1052563B (de) 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen

Also Published As

Publication number Publication date
JPS4119937B1 (en:Method) 1966-11-18
GB987866A (en) 1965-03-31
US3095324A (en) 1963-06-25
US3290175A (en) 1966-12-06

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