DE1141977B - Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze - Google Patents

Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze

Info

Publication number
DE1141977B
DE1141977B DES60633A DES0060633A DE1141977B DE 1141977 B DE1141977 B DE 1141977B DE S60633 A DES60633 A DE S60633A DE S0060633 A DES0060633 A DE S0060633A DE 1141977 B DE1141977 B DE 1141977B
Authority
DE
Germany
Prior art keywords
melt
opening
crucible
semiconductor material
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES60633A
Other languages
German (de)
English (en)
Inventor
Rudolf Kappelmeyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL121446D priority Critical patent/NL121446C/xx
Priority to NL244873D priority patent/NL244873A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES60633A priority patent/DE1141977B/de
Priority to US842364A priority patent/US3078151A/en
Priority to FR807710A priority patent/FR1237642A/fr
Priority to CH8044859A priority patent/CH380085A/de
Priority to GB38988/59A priority patent/GB916390A/en
Publication of DE1141977B publication Critical patent/DE1141977B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DES60633A 1958-11-17 1958-11-17 Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze Pending DE1141977B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL121446D NL121446C (en, 2012) 1958-11-17
NL244873D NL244873A (en, 2012) 1958-11-17
DES60633A DE1141977B (de) 1958-11-17 1958-11-17 Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze
US842364A US3078151A (en) 1958-11-17 1959-09-25 Apparatus for drawing semiconductor bodies from a melt
FR807710A FR1237642A (fr) 1958-11-17 1959-10-16 Procédé d'obtention de bâtonnets mono-cristallins de semi-conducteur, par tirage à partir d'un bain de fusion
CH8044859A CH380085A (de) 1958-11-17 1959-11-10 Verfahren zum Ziehen von Halbleiterstäben aus der Schmelze sowie Tiegelvorrichtung zur Durchführung des Verfahrens
GB38988/59A GB916390A (en) 1958-11-17 1959-11-17 Method of drawing a semi-conductor rod from a melt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES60633A DE1141977B (de) 1958-11-17 1958-11-17 Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze

Publications (1)

Publication Number Publication Date
DE1141977B true DE1141977B (de) 1963-01-03

Family

ID=7494258

Family Applications (1)

Application Number Title Priority Date Filing Date
DES60633A Pending DE1141977B (de) 1958-11-17 1958-11-17 Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze

Country Status (6)

Country Link
US (1) US3078151A (en, 2012)
CH (1) CH380085A (en, 2012)
DE (1) DE1141977B (en, 2012)
FR (1) FR1237642A (en, 2012)
GB (1) GB916390A (en, 2012)
NL (2) NL244873A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2254616B2 (de) * 1971-11-08 1974-11-28 Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm
DE2554354A1 (de) * 1974-12-04 1976-06-10 Metals Research Ltd Verfahren und vorrichtung zum wachsen von kristallen in form eines duennen streifens

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3240568A (en) * 1961-12-20 1966-03-15 Monsanto Co Process and apparatus for the production of single crystal compounds
US3291574A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Semiconductor crystal growth from a domical projection
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
NL6917398A (en, 2012) * 1969-03-18 1970-09-22
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
DE2454092A1 (de) * 1974-11-14 1976-05-26 Wacker Chemitronic Verfahren zum quantitativen entfernen von restschmelzen
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
JPH01192789A (ja) * 1988-01-27 1989-08-02 Toshiba Corp 結晶引上げ装置及び結晶引上げ方法
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB754767A (en) * 1953-05-18 1956-08-15 Standard Telephones Cables Ltd Improvements in or relating to methods of crystallizing from melts
GB784617A (en) * 1954-03-02 1957-10-09 Siemens Ag Improvements in or relating to processes and apparatus for drawing fused bodies

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB754767A (en) * 1953-05-18 1956-08-15 Standard Telephones Cables Ltd Improvements in or relating to methods of crystallizing from melts
GB784617A (en) * 1954-03-02 1957-10-09 Siemens Ag Improvements in or relating to processes and apparatus for drawing fused bodies
DE1044768B (de) * 1954-03-02 1958-11-27 Siemens Ag Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2254616B2 (de) * 1971-11-08 1974-11-28 Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm
DE2254616C3 (de) * 1971-11-08 1975-07-10 Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm
DE2554354A1 (de) * 1974-12-04 1976-06-10 Metals Research Ltd Verfahren und vorrichtung zum wachsen von kristallen in form eines duennen streifens

Also Published As

Publication number Publication date
NL244873A (en, 2012)
US3078151A (en) 1963-02-19
CH380085A (de) 1964-07-31
NL121446C (en, 2012)
FR1237642A (fr) 1960-07-29
GB916390A (en) 1963-01-23

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