US3078151A - Apparatus for drawing semiconductor bodies from a melt - Google Patents

Apparatus for drawing semiconductor bodies from a melt Download PDF

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Publication number
US3078151A
US3078151A US842364A US84236459A US3078151A US 3078151 A US3078151 A US 3078151A US 842364 A US842364 A US 842364A US 84236459 A US84236459 A US 84236459A US 3078151 A US3078151 A US 3078151A
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US
United States
Prior art keywords
melt
semiconductor
opening
crucible
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US842364A
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English (en)
Inventor
Kappelmeyer Rudolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
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Siemens Corp
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Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
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Publication of US3078151A publication Critical patent/US3078151A/en
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Definitions

  • This invention is concerned with drawing rodlike semiconductor bodies, especially thin rodlike substantially mono-crystalline semiconductor bodies, from a melt contained in a crucible.
  • FIG. 1 illustrates as an aid to the understanding of the invention capillary phenomena produced upon dipping a tubular body into a non-wetting liquid
  • FIGS. 2 and 3 illustrate in cross sectional views crucible devices which are particularly favorable for practicing the invention.
  • FIG. 4 shows a top elevational view of the crucible device according to FIG. 3.
  • the invention is based upon the known phenomenon of capillary action. If a body, especially a tubular hollow body (capillary) 1 is, as shown in FIG. 1, dipped into a non-wetting liquid 2, the liquid within the tubular body is depressed downwardly, such action being referred to as capillary depression.
  • the liquid appears in the capillary relative to the surrounding liquid lower by the amount h.
  • the liquid level within the capillary depends in addi tion to the border surface tension and density of the liquid only upon the diameter of the tubular body. The smaller the cross section of the capillary, the more will the liquid be depressed downwardly, that is, the liquid level Within the capillary will be lower with decreasing cross section of the capillary.
  • the height of the liquid level within the capillary does not depend upon the height of the level of the liquid surrounding the capillary.
  • the material required for the formation of the desired semiconductor rod is drawn from a point in the semiconductor melt which is below the highest surface parts thereof, a member provided with an opening formed therein being for this purpose dipped into the melt and the material for the semiconductor rod being drawn through such opening. Accordingly, into the semiconductor melt is dipped a memher which may be shaped as desired, it being merely essential that such member is provided with an opening which is so small that capillary forces can become operative.
  • the semiconductor rod is drawn through such open-
  • the advantage resulting from the invention resides in obtaining with substantially constant drawing speed a fixed location for the transition zone, liquid-solid(solidification zone), which is independent of the top level of the melt in the crucible. It follows, therefore, that the supply of molten material does not require accurate dosing during the drawing operation.
  • the diameter of the drawn rodlike member is deter-mined by the distance of the solidification front from the surface of the melt, it is necessary to provide at the corresponding area measuring feeler means for the diameter regulation.
  • feeler means may be fixedly built in.
  • an inductive measuring feeler may be used for measuring this distance, utilizing thereby as a measuring value the abrupt resistance change occurring in the case of germanium and silicon upon transition from the liquid to the solid state.
  • a further advantage of the invention resides in the fact capil lary or opening will rise.
  • the part provided with-the opening' is ,v "ice Ashes alreadybeen explained, ,ab ove the height h is with given dla meter of the qapillary or opening a cons a f nction.
  • Acc rd n ly, whe th c l ar Orthe partprovided with an opening is dipped deeper intothe liquid or semiconductor melt, the liquid level in the In accordance with the dipped into the melt to a depth, such that the semiconductor material, owing to its surface tension, does not normally automatically pass through the opening which is for this purpose made correspondingly small.
  • the opening thereby serves as upper limit of the rod diameter.
  • the invention may be advantageously employed for the drawing of thin crystal rods.
  • FIGS. 2, 3 and 4 show particularly advantageous crucible devices for practicing the invention.
  • the crucible shown in FIG. 2 comprises two parts 5 and 6 which are firmly interconnected by the part 7.
  • the inner crucible part 6 has at the bottom 3 thereof a hole 4 formed therein through which the desired semiconductor rod is drawn from the melt 9.
  • the melt level 8 may be in view of the capillary depression considerably above the level of the bottom 3 of the inner part 6.
  • a rod may be continuously drawn from the melt upwardly through the opening 4.
  • the melt level within the opening 4 is thereby independent of the height of the melt level 8, making it possible to supply during the drawing operation semiconductor material to the crucible part 5 without regard to any accurate dosing.
  • a suitable measuring feeler for regulating the diameter of the drawn rod is provided in the opening 4 and fixedly connected with the corresponding crucible part 6.
  • the interconnecting part 7 may be disposed so as tobe easily removable or, alternatively, it may be provided with openings for inserting semiconductor material during the drawing operation.
  • the connecting part 7' and the inner crucible part having the opening 4 are made of one piece which is firmly connected, for example, screw connected with the outer crucible part 5, covering only part of the outer part 5.
  • An opening 4 is again formed at the bottom 3 of the inner crucible part for drawing the semiconductor rod therethrough.
  • a measuring feeler is again positioned in the opening 4.
  • the melt 9 extends for several millimeters upwardly beyond the plane 10, that is, beyond the plane of the margin of the outer crucible part.
  • Thin germanium crystal rods with diameters from 1-2 millimeters have been drawn particularly with the aid of a crucible arrangement made according to the invention and corresponding to the arrangement illustrated in FIGS. 3 and 4.
  • a crucible device containing such melt, said crucible device comprising firmly interconnected outer and inner parts, said inner part having a bottom wall disposed substantially below the upper edge of said outer part and containing a capillary opening fixedly disposed in said melt at a level lying below but otherwise independent of the highest surface level of the melt, said opening having a size sufficiently large to permit the continuous drawing of semiconductor material therethrough to form a semiconductor rod of predetermined size and at the same time of a size sufiiciently small to prevent, by capillary action, upward flow therethrough of semiconductor material when the opening is disposed at normal operating depth in the melt.
  • a crucible device according to claim 1, wherein both said crucible parts are made of graphite for the processing of a germanium melt.
  • a crucible device according to claim 1, wherein both 4 said crucible parts are made of quartz for the processing of a silicon melt.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US842364A 1958-11-17 1959-09-25 Apparatus for drawing semiconductor bodies from a melt Expired - Lifetime US3078151A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES60633A DE1141977B (de) 1958-11-17 1958-11-17 Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze

Publications (1)

Publication Number Publication Date
US3078151A true US3078151A (en) 1963-02-19

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ID=7494258

Family Applications (1)

Application Number Title Priority Date Filing Date
US842364A Expired - Lifetime US3078151A (en) 1958-11-17 1959-09-25 Apparatus for drawing semiconductor bodies from a melt

Country Status (6)

Country Link
US (1) US3078151A (en, 2012)
CH (1) CH380085A (en, 2012)
DE (1) DE1141977B (en, 2012)
FR (1) FR1237642A (en, 2012)
GB (1) GB916390A (en, 2012)
NL (2) NL244873A (en, 2012)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3240568A (en) * 1961-12-20 1966-03-15 Monsanto Co Process and apparatus for the production of single crystal compounds
US3291574A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Semiconductor crystal growth from a domical projection
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3716345A (en) * 1969-03-18 1973-02-13 Siemens Ag Czochralski crystallization of gallium arsenide using a boron oxide sealed device
US4028137A (en) * 1974-11-14 1977-06-07 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the quantitative removal of residual melts from crucibles
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4211600A (en) * 1974-12-04 1980-07-08 Metals Research Limited Crystal growth
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4268483A (en) * 1976-03-17 1981-05-19 Metals Research Limited Improvements in and relating to the growth of crystalline material
US4894206A (en) * 1986-09-22 1990-01-16 Kabushiki Kaisha Toshiba Crystal pulling apparatus
US5021225A (en) * 1988-02-22 1991-06-04 Kabushiki Kaisha Toshiba Crystal pulling apparatus and crystal pulling method using the same
US5034200A (en) * 1988-01-27 1991-07-23 Kabushiki Kaisha Toshiba Crystal pulling apparatus and crystal pulling method
US5087321A (en) * 1987-12-08 1992-02-11 Nkk Corporation Manufacturing method and equipment of single silicon crystal

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791024A (fr) * 1971-11-08 1973-05-07 Tyco Laboratories Inc Procede pour developper des cristaux a partir d'un bain d'une matiere

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB754767A (en) * 1953-05-18 1956-08-15 Standard Telephones Cables Ltd Improvements in or relating to methods of crystallizing from melts
US2876147A (en) * 1953-02-14 1959-03-03 Siemens Ag Method of and apparatus for producing semiconductor material
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2876147A (en) * 1953-02-14 1959-03-03 Siemens Ag Method of and apparatus for producing semiconductor material
GB754767A (en) * 1953-05-18 1956-08-15 Standard Telephones Cables Ltd Improvements in or relating to methods of crystallizing from melts
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3240568A (en) * 1961-12-20 1966-03-15 Monsanto Co Process and apparatus for the production of single crystal compounds
US3291574A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Semiconductor crystal growth from a domical projection
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3716345A (en) * 1969-03-18 1973-02-13 Siemens Ag Czochralski crystallization of gallium arsenide using a boron oxide sealed device
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4028137A (en) * 1974-11-14 1977-06-07 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the quantitative removal of residual melts from crucibles
US4211600A (en) * 1974-12-04 1980-07-08 Metals Research Limited Crystal growth
US4268483A (en) * 1976-03-17 1981-05-19 Metals Research Limited Improvements in and relating to the growth of crystalline material
US4894206A (en) * 1986-09-22 1990-01-16 Kabushiki Kaisha Toshiba Crystal pulling apparatus
US5087321A (en) * 1987-12-08 1992-02-11 Nkk Corporation Manufacturing method and equipment of single silicon crystal
US5034200A (en) * 1988-01-27 1991-07-23 Kabushiki Kaisha Toshiba Crystal pulling apparatus and crystal pulling method
US5021225A (en) * 1988-02-22 1991-06-04 Kabushiki Kaisha Toshiba Crystal pulling apparatus and crystal pulling method using the same

Also Published As

Publication number Publication date
NL244873A (en, 2012)
DE1141977B (de) 1963-01-03
CH380085A (de) 1964-07-31
NL121446C (en, 2012)
FR1237642A (fr) 1960-07-29
GB916390A (en) 1963-01-23

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