DE1132749B - Ferroelektrische Matrix - Google Patents
Ferroelektrische MatrixInfo
- Publication number
- DE1132749B DE1132749B DEN18066A DEN0018066A DE1132749B DE 1132749 B DE1132749 B DE 1132749B DE N18066 A DEN18066 A DE N18066A DE N0018066 A DEN0018066 A DE N0018066A DE 1132749 B DE1132749 B DE 1132749B
- Authority
- DE
- Germany
- Prior art keywords
- ferroelectric
- elements
- conductor
- photocells
- hand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 title claims description 33
- 239000004020 conductor Substances 0.000 claims description 46
- 230000015654 memory Effects 0.000 claims description 35
- 230000010287 polarization Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000005234 chemical deposition Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 zinc sulfide-copper halide Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US802371A US3079591A (en) | 1959-03-27 | 1959-03-27 | Memory devices |
| US208476A US3158842A (en) | 1959-03-27 | 1962-07-09 | Memory devices using ferroelectric capacitors and photoconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1132749B true DE1132749B (de) | 1962-07-05 |
Family
ID=26903228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN18066A Pending DE1132749B (de) | 1959-03-27 | 1960-03-23 | Ferroelektrische Matrix |
Country Status (6)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3747075A (en) * | 1970-04-03 | 1973-07-17 | Rca Corp | Electro-optical storage device |
| FR2195033B1 (US07122603-20061017-C00294.png) * | 1972-08-01 | 1976-10-29 | Thomson Csf | |
| US4809225A (en) * | 1987-07-02 | 1989-02-28 | Ramtron Corporation | Memory cell with volatile and non-volatile portions having ferroelectric capacitors |
| US5434811A (en) * | 1987-11-19 | 1995-07-18 | National Semiconductor Corporation | Non-destructive read ferroelectric based memory circuit |
| US5038323A (en) * | 1990-03-06 | 1991-08-06 | The United States Of America As Represented By The Secretary Of The Navy | Non-volatile memory cell with ferroelectric capacitor having logically inactive electrode |
| US5327373A (en) * | 1992-08-21 | 1994-07-05 | Board Of Regents, The University Of Texas System | Optoelectronic memories with photoconductive thin films |
| JP4802415B2 (ja) * | 2001-08-13 | 2011-10-26 | 日本テキサス・インスツルメンツ株式会社 | 強誘電体メモリ |
| US7050323B2 (en) * | 2002-08-29 | 2006-05-23 | Texas Instruments Incorporated | Ferroelectric memory |
-
0
- NL NL127546D patent/NL127546C/xx active
- NL NL247499D patent/NL247499A/xx unknown
-
1960
- 1960-02-03 CH CH362119D patent/CH362119A/fr unknown
- 1960-03-22 GB GB10091/60A patent/GB873897A/en not_active Expired
- 1960-03-23 DE DEN18066A patent/DE1132749B/de active Pending
- 1960-03-25 FR FR822388A patent/FR1251919A/fr not_active Expired
-
1962
- 1962-07-09 US US208476A patent/US3158842A/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| None * |
Also Published As
| Publication number | Publication date |
|---|---|
| NL127546C (US07122603-20061017-C00294.png) | |
| NL247499A (US07122603-20061017-C00294.png) | |
| FR1251919A (fr) | 1961-01-20 |
| CH362119A (fr) | 1962-05-31 |
| US3158842A (en) | 1964-11-24 |
| GB873897A (en) | 1961-08-02 |
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