DE112023000641T5 - Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung - Google Patents
Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung Download PDFInfo
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- DE112023000641T5 DE112023000641T5 DE112023000641.5T DE112023000641T DE112023000641T5 DE 112023000641 T5 DE112023000641 T5 DE 112023000641T5 DE 112023000641 T DE112023000641 T DE 112023000641T DE 112023000641 T5 DE112023000641 T5 DE 112023000641T5
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Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-007959 | 2022-01-21 | ||
| JP2022007959 | 2022-01-21 | ||
| JP2022-028326 | 2022-02-25 | ||
| JP2022028326 | 2022-02-25 | ||
| PCT/IB2023/050232 WO2023139447A1 (ja) | 2022-01-21 | 2023-01-11 | 半導体装置、及び半導体装置の作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112023000641T5 true DE112023000641T5 (de) | 2024-11-21 |
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| DE112023000641.5T Pending DE112023000641T5 (de) | 2022-01-21 | 2023-01-11 | Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung |
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| Country | Link |
|---|---|
| US (1) | US20250113716A1 (https=) |
| JP (1) | JPWO2023139447A1 (https=) |
| KR (1) | KR20240135790A (https=) |
| DE (1) | DE112023000641T5 (https=) |
| TW (1) | TW202345409A (https=) |
| WO (1) | WO2023139447A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240162357A1 (en) * | 2021-03-30 | 2024-05-16 | Idemitsu Kosan Co.,Ltd. | Photoelectric conversion element and method for manufacturing photoelectric conversion element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025163452A1 (ja) * | 2024-01-31 | 2025-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018087625A1 (en) | 2016-11-10 | 2018-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8772094B2 (en) * | 2011-11-25 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9246011B2 (en) * | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TW202032242A (zh) * | 2018-08-03 | 2020-09-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
-
2023
- 2023-01-11 JP JP2023574883A patent/JPWO2023139447A1/ja active Pending
- 2023-01-11 DE DE112023000641.5T patent/DE112023000641T5/de active Pending
- 2023-01-11 US US18/728,173 patent/US20250113716A1/en active Pending
- 2023-01-11 KR KR1020247026540A patent/KR20240135790A/ko active Pending
- 2023-01-11 WO PCT/IB2023/050232 patent/WO2023139447A1/ja not_active Ceased
- 2023-01-16 TW TW112101849A patent/TW202345409A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018087625A1 (en) | 2016-11-10 | 2018-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240162357A1 (en) * | 2021-03-30 | 2024-05-16 | Idemitsu Kosan Co.,Ltd. | Photoelectric conversion element and method for manufacturing photoelectric conversion element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023139447A1 (https=) | 2023-07-27 |
| WO2023139447A1 (ja) | 2023-07-27 |
| KR20240135790A (ko) | 2024-09-12 |
| US20250113716A1 (en) | 2025-04-03 |
| TW202345409A (zh) | 2023-11-16 |
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