DE112021003792T5 - Halbleitersubstrat von einem Nitrid der Gruppe III - Google Patents

Halbleitersubstrat von einem Nitrid der Gruppe III Download PDF

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Publication number
DE112021003792T5
DE112021003792T5 DE112021003792.7T DE112021003792T DE112021003792T5 DE 112021003792 T5 DE112021003792 T5 DE 112021003792T5 DE 112021003792 T DE112021003792 T DE 112021003792T DE 112021003792 T5 DE112021003792 T5 DE 112021003792T5
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DE
Germany
Prior art keywords
group iii
semiconductor substrate
substrate
nitride semiconductor
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021003792.7T
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German (de)
English (en)
Inventor
Masahiro Sakai
Shohei Oue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE112021003792T5 publication Critical patent/DE112021003792T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE112021003792.7T 2020-10-14 2021-05-27 Halbleitersubstrat von einem Nitrid der Gruppe III Pending DE112021003792T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020173012 2020-10-14
JP2020-173012 2020-10-14
PCT/JP2021/020278 WO2022079939A1 (ja) 2020-10-14 2021-05-27 Ｉｉｉ族元素窒化物半導体基板

Publications (1)

Publication Number Publication Date
DE112021003792T5 true DE112021003792T5 (de) 2023-05-17

Family

ID=81209113

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021003792.7T Pending DE112021003792T5 (de) 2020-10-14 2021-05-27 Halbleitersubstrat von einem Nitrid der Gruppe III

Country Status (5)

Country Link
US (1) US12057307B2 (https=)
JP (1) JPWO2022079939A1 (https=)
CN (1) CN116096936B (https=)
DE (1) DE112021003792T5 (https=)
WO (1) WO2022079939A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3126258B1 (fr) * 2021-08-20 2024-10-04 St Microelectronics Crolles 2 Sas Structure d'interconnexion d’un circuit intégré

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581145B2 (ja) 1979-03-19 1983-01-10 株式会社井上ジャパックス研究所 導電異方性ゴム又はプラスチツク
JP2005263609A (ja) 2003-12-26 2005-09-29 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造ロット、並びにｉｉｉ−ｖ族窒化物系半導体デバイス及びその製造方法
JP4350505B2 (ja) 2001-06-08 2009-10-21 クリー・インコーポレーテッド 高表面品質ＧａＮウェーハおよびその製造方法
JP4380791B2 (ja) 2009-01-23 2009-12-09 住友電気工業株式会社 ＧａＮ結晶基板およびその製造方法
JP5244628B2 (ja) 2009-01-21 2013-07-24 日本碍子株式会社 ３ｂ族窒化物結晶板の製法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100550491B1 (ko) 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
US7045808B2 (en) 2003-12-26 2006-05-16 Hitachi Cable, Ltd. III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method
JP5416650B2 (ja) * 2010-05-10 2014-02-12 日立金属株式会社 窒化ガリウム基板
JP2013116841A (ja) * 2011-12-05 2013-06-13 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶の製造方法、周期表第１３族金属窒化物半導体基板および周期表第１３族金属窒化物半導体結晶
KR102100841B1 (ko) 2013-03-29 2020-04-14 엔지케이 인슐레이터 엘티디 Iii족 질화물 기판의 처리 방법 및 에피택셜 기판의 제조 방법
US10043654B2 (en) * 2014-07-22 2018-08-07 Sumitomo Electric Industries, Ltd. Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate
JP6418130B2 (ja) 2015-10-20 2018-11-07 株式会社Sumco 半導体ウェーハの加工方法
JP6764035B2 (ja) * 2017-08-24 2020-09-30 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581145B2 (ja) 1979-03-19 1983-01-10 株式会社井上ジャパックス研究所 導電異方性ゴム又はプラスチツク
JP4350505B2 (ja) 2001-06-08 2009-10-21 クリー・インコーポレーテッド 高表面品質ＧａＮウェーハおよびその製造方法
JP2005263609A (ja) 2003-12-26 2005-09-29 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造ロット、並びにｉｉｉ−ｖ族窒化物系半導体デバイス及びその製造方法
JP5244628B2 (ja) 2009-01-21 2013-07-24 日本碍子株式会社 ３ｂ族窒化物結晶板の製法
JP4380791B2 (ja) 2009-01-23 2009-12-09 住友電気工業株式会社 ＧａＮ結晶基板およびその製造方法

Also Published As

Publication number Publication date
US20230220587A1 (en) 2023-07-13
CN116096936A (zh) 2023-05-09
JPWO2022079939A1 (https=) 2022-04-21
WO2022079939A1 (ja) 2022-04-21
CN116096936B (zh) 2026-04-07
US12057307B2 (en) 2024-08-06

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