DE112017002298T5 - Messung von Halbleiterstrukturen mit kapillarer Kondensation - Google Patents
Messung von Halbleiterstrukturen mit kapillarer Kondensation Download PDFInfo
- Publication number
- DE112017002298T5 DE112017002298T5 DE112017002298.3T DE112017002298T DE112017002298T5 DE 112017002298 T5 DE112017002298 T5 DE 112017002298T5 DE 112017002298 T DE112017002298 T DE 112017002298T DE 112017002298 T5 DE112017002298 T5 DE 112017002298T5
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- 238000005259 measurement Methods 0.000 title claims abstract description 174
- 238000009833 condensation Methods 0.000 title abstract description 40
- 230000005494 condensation Effects 0.000 title abstract description 40
- 239000004065 semiconductor Substances 0.000 title description 24
- 239000000945 filler Substances 0.000 claims abstract description 102
- 239000000463 material Substances 0.000 claims abstract description 96
- 238000010926 purge Methods 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 66
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 42
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 35
- 238000005286 illumination Methods 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 238000010793 Steam injection (oil industry) Methods 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 22
- 238000004458 analytical method Methods 0.000 claims description 20
- 230000004044 response Effects 0.000 claims description 19
- 238000007689 inspection Methods 0.000 claims description 14
- 229920006395 saturated elastomer Polymers 0.000 claims description 12
- 239000012808 vapor phase Substances 0.000 claims description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims 3
- 239000007924 injection Substances 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 2
- 238000003384 imaging method Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 22
- 230000003287 optical effect Effects 0.000 abstract description 10
- 239000011364 vaporized material Substances 0.000 abstract description 3
- 238000004611 spectroscopical analysis Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 73
- 239000007789 gas Substances 0.000 description 63
- 239000000523 sample Substances 0.000 description 31
- 230000003595 spectral effect Effects 0.000 description 18
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 13
- 230000005611 electricity Effects 0.000 description 12
- 238000003860 storage Methods 0.000 description 11
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 238000001459 lithography Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000691 measurement method Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000572 ellipsometry Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- 238000004422 calculation algorithm Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013488 ordinary least square regression Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662330751P | 2016-05-02 | 2016-05-02 | |
| US62/330,751 | 2016-05-02 | ||
| US15/204,938 US10281263B2 (en) | 2016-05-02 | 2016-07-07 | Critical dimension measurements with gaseous adsorption |
| US15/204,938 | 2016-07-07 | ||
| US201762441887P | 2017-01-03 | 2017-01-03 | |
| US62/441,887 | 2017-01-03 | ||
| PCT/US2017/030267 WO2017192406A1 (en) | 2016-05-02 | 2017-04-28 | Measurement of semiconductor structures with capillary condensation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112017002298T5 true DE112017002298T5 (de) | 2019-02-14 |
Family
ID=60203204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112017002298.3T Withdrawn DE112017002298T5 (de) | 2016-05-02 | 2017-04-28 | Messung von Halbleiterstrukturen mit kapillarer Kondensation |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6790123B2 (zh) |
| KR (1) | KR102219787B1 (zh) |
| CN (1) | CN109075100B (zh) |
| DE (1) | DE112017002298T5 (zh) |
| WO (1) | WO2017192406A1 (zh) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| US7755764B2 (en) | 2007-01-26 | 2010-07-13 | Kla-Tencor Corporation | Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002364719A1 (en) * | 2001-12-31 | 2003-07-24 | Tokyo Electron Limited | Method of fault detection for material process system |
| JP3693972B2 (ja) * | 2002-03-19 | 2005-09-14 | 富士通株式会社 | 貼合せ基板製造装置及び基板貼合せ方法 |
| US20090081810A1 (en) * | 2004-10-06 | 2009-03-26 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
| KR20100106608A (ko) * | 2008-01-31 | 2010-10-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 폐쇄 회로 ｍｏｃｖｄ 증착 제어 |
| US20100235114A1 (en) * | 2009-03-10 | 2010-09-16 | Kla-Tencor Corporation | Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range |
| KR101306986B1 (ko) * | 2010-03-09 | 2013-09-26 | 한국전자통신연구원 | 박막 형성 장치 |
| KR20130006986A (ko) * | 2011-06-28 | 2013-01-18 | 엘지전자 주식회사 | 휴대 단말기 및 그 제어 방법 |
| US10079183B2 (en) * | 2013-06-26 | 2018-09-18 | Kla-Tenor Corporation | Calculated electrical performance metrics for process monitoring and yield management |
| CN103839851A (zh) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | 终点判断方法 |
-
2017
- 2017-04-28 KR KR1020187034562A patent/KR102219787B1/ko active IP Right Grant
- 2017-04-28 DE DE112017002298.3T patent/DE112017002298T5/de not_active Withdrawn
- 2017-04-28 JP JP2018557400A patent/JP6790123B2/ja active Active
- 2017-04-28 WO PCT/US2017/030267 patent/WO2017192406A1/en active Application Filing
- 2017-04-28 CN CN201780027228.1A patent/CN109075100B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| US7755764B2 (en) | 2007-01-26 | 2010-07-13 | Kla-Tencor Corporation | Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017192406A1 (en) | 2017-11-09 |
| JP6790123B2 (ja) | 2020-11-25 |
| KR20180132947A (ko) | 2018-12-12 |
| CN109075100A (zh) | 2018-12-21 |
| CN109075100B (zh) | 2020-06-30 |
| JP2019515294A (ja) | 2019-06-06 |
| KR102219787B1 (ko) | 2021-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R005 | Application deemed withdrawn due to failure to request examination |