DE112006004135A5 - Leistungshalbleitermodul für die Energieverteilung mit Explosionsschutz - Google Patents

Leistungshalbleitermodul für die Energieverteilung mit Explosionsschutz Download PDF

Info

Publication number
DE112006004135A5
DE112006004135A5 DE112006004135T DE112006004135T DE112006004135A5 DE 112006004135 A5 DE112006004135 A5 DE 112006004135A5 DE 112006004135 T DE112006004135 T DE 112006004135T DE 112006004135 T DE112006004135 T DE 112006004135T DE 112006004135 A5 DE112006004135 A5 DE 112006004135A5
Authority
DE
Germany
Prior art keywords
semiconductor module
power
explosion protection
power distribution
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112006004135T
Other languages
English (en)
Inventor
Markus Billman
Jörg DORN
Werner Hartmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Siemens AG
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV, Siemens AG filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of DE112006004135A5 publication Critical patent/DE112006004135A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inverter Devices (AREA)
DE112006004135T 2006-09-14 2006-09-14 Leistungshalbleitermodul für die Energieverteilung mit Explosionsschutz Withdrawn DE112006004135A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2006/001638 WO2008031370A1 (de) 2006-09-14 2006-09-14 Leistungshalbleitermodul für die energieverteilung mit explosionsschutz

Publications (1)

Publication Number Publication Date
DE112006004135A5 true DE112006004135A5 (de) 2009-08-20

Family

ID=38131587

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112006004135T Withdrawn DE112006004135A5 (de) 2006-09-14 2006-09-14 Leistungshalbleitermodul für die Energieverteilung mit Explosionsschutz

Country Status (2)

Country Link
DE (1) DE112006004135A5 (de)
WO (1) WO2008031370A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101921585B1 (ko) 2014-07-01 2018-11-26 지멘스 악티엔게젤샤프트 가압 요소를 갖는 클램핑 조립체

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH601917A5 (de) * 1976-10-27 1978-07-14 Bbc Brown Boveri & Cie
JPS5635443A (en) * 1979-08-31 1981-04-08 Toshiba Corp Semiconductor device
JPS60177658A (ja) * 1984-02-24 1985-09-11 Fuji Electric Co Ltd 電子回路のパツケ−ジ
JPS61145851A (ja) * 1984-12-20 1986-07-03 Toshiba Corp 半導体モジユ−ル
US5744860A (en) * 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
DE19649798A1 (de) * 1996-12-02 1998-06-04 Abb Research Ltd Leistungshalbleitermodul
JP2001244386A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd パワー半導体モジュール
JP2003068940A (ja) * 2001-08-28 2003-03-07 Mitsubishi Electric Corp 電力用半導体装置

Also Published As

Publication number Publication date
WO2008031370A1 (de) 2008-03-20

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee