DE112005002169A5 - Elektrische Ermittlung der Dicke von Halbleitermembranen durch Energieeintrag - Google Patents

Elektrische Ermittlung der Dicke von Halbleitermembranen durch Energieeintrag Download PDF

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Publication number
DE112005002169A5
DE112005002169A5 DE112005002169T DE112005002169T DE112005002169A5 DE 112005002169 A5 DE112005002169 A5 DE 112005002169A5 DE 112005002169 T DE112005002169 T DE 112005002169T DE 112005002169 T DE112005002169 T DE 112005002169T DE 112005002169 A5 DE112005002169 A5 DE 112005002169A5
Authority
DE
Germany
Prior art keywords
thickness
energy input
semiconductor membranes
electrical determination
determination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112005002169T
Other languages
English (en)
Inventor
Siegfried Hering
Gisbert Hoelzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Publication of DE112005002169A5 publication Critical patent/DE112005002169A5/de
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
    • G01B21/085—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness using thermal means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
DE112005002169T 2004-10-21 2005-10-20 Elektrische Ermittlung der Dicke von Halbleitermembranen durch Energieeintrag Withdrawn DE112005002169A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004051113A DE102004051113B4 (de) 2004-10-21 2004-10-21 Verfahren und Messanordnung zur elektrischen Ermittlung der Dicke von Halbleitermembranen durch Energieeintrag
DE102004051113.6 2004-10-21
PCT/DE2005/001873 WO2006042528A1 (de) 2004-10-21 2005-10-20 Elektrische ermittlung der dicke von halbleitermembranen durch energieeintrag

Publications (1)

Publication Number Publication Date
DE112005002169A5 true DE112005002169A5 (de) 2007-07-12

Family

ID=35735228

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004051113A Expired - Fee Related DE102004051113B4 (de) 2004-10-21 2004-10-21 Verfahren und Messanordnung zur elektrischen Ermittlung der Dicke von Halbleitermembranen durch Energieeintrag
DE112005002169T Withdrawn DE112005002169A5 (de) 2004-10-21 2005-10-20 Elektrische Ermittlung der Dicke von Halbleitermembranen durch Energieeintrag

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102004051113A Expired - Fee Related DE102004051113B4 (de) 2004-10-21 2004-10-21 Verfahren und Messanordnung zur elektrischen Ermittlung der Dicke von Halbleitermembranen durch Energieeintrag

Country Status (4)

Country Link
US (1) US20090174418A1 (de)
EP (1) EP1802939A1 (de)
DE (2) DE102004051113B4 (de)
WO (1) WO2006042528A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006002753B4 (de) * 2006-01-20 2010-09-30 X-Fab Semiconductor Foundries Ag Verfahren und Anordnung zur Bewertung der Unterätzung von tiefen Grabenstrukturen in SOI-Scheiben
DE102007018877B4 (de) * 2007-04-19 2010-03-04 Hönig, Thomas Verfahren und Materialauftragseinrichtung mit einer Prüfvorrichtung zur Gütemessung des Auftragsbildes einer Sprühdüse sowie Verwendung eines Testfelds
EP2668483B1 (de) 2011-01-28 2015-11-18 ELMOS Semiconductor AG Mikroelektromechanisches bauelement und verfahren zum testen eines mikroelektromechanischen bauelements

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE49807T1 (de) * 1985-03-27 1990-02-15 Siemens Ag Kapazitiver drucksensor.
GB2179748B (en) * 1985-08-20 1989-09-06 Sharp Kk Thermal flow sensor
EP0515695B1 (de) * 1990-12-14 1998-03-18 Anritsu Corporation Fühlvorrichtung zur messung des charakteristischen wertes eines zu messenden elementes unter verwendung der veränderungen des thermischen widerstands
DE4414349A1 (de) * 1993-12-23 1995-06-29 Heimann Optoelectronics Gmbh Thermoelektrischer Mikrovakuumsensor
WO1998005921A1 (de) * 1996-07-31 1998-02-12 Siemens Aktiengesellschaft Verfahren zur wanddickenbestimmung an einer turbinenschaufel und vorrichtung zur durchführung des verfahrens
DE19701055B4 (de) * 1997-01-15 2016-04-28 Robert Bosch Gmbh Halbleiter-Drucksensor
DE19710559A1 (de) * 1997-03-14 1998-09-17 Bosch Gmbh Robert Sensor mit einem Dünnfilmelement
JP3455473B2 (ja) * 1999-07-14 2003-10-14 三菱電機株式会社 感熱式流量センサ
DE19958311C2 (de) * 1999-12-03 2001-09-20 Daimler Chrysler Ag Halbleiter-Gassensor in Siliziumbauweise, sowie Verfahren zur Herstellung und zum Betrieb eines Halbleiter-Gassensors
KR20050026904A (ko) * 2001-09-10 2005-03-16 마이크로브리지 테크놀로지스 인크. 저항기 트리밍 방법
JP2006226756A (ja) * 2005-02-16 2006-08-31 Denso Corp 圧力センサ

Also Published As

Publication number Publication date
US20090174418A1 (en) 2009-07-09
DE102004051113A1 (de) 2006-05-04
WO2006042528A1 (de) 2006-04-27
DE102004051113B4 (de) 2006-11-30
EP1802939A1 (de) 2007-07-04

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Legal Events

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R120 Application withdrawn or ip right abandoned

Effective date: 20110510