DE112005001445T5 - Laservorrichtung - Google Patents

Laservorrichtung Download PDF

Info

Publication number
DE112005001445T5
DE112005001445T5 DE112005001445T DE112005001445T DE112005001445T5 DE 112005001445 T5 DE112005001445 T5 DE 112005001445T5 DE 112005001445 T DE112005001445 T DE 112005001445T DE 112005001445 T DE112005001445 T DE 112005001445T DE 112005001445 T5 DE112005001445 T5 DE 112005001445T5
Authority
DE
Germany
Prior art keywords
coolant
laser device
light
flow path
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112005001445T
Other languages
German (de)
English (en)
Inventor
Hirofumi Hamamatsu Miyajima
Hirofumi Hamamatsu Kan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE112005001445T5 publication Critical patent/DE112005001445T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H10W40/475—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling using jet impingement

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE112005001445T 2004-08-12 2005-07-08 Laservorrichtung Withdrawn DE112005001445T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-235527 2004-08-12
JP2004235527A JP4167209B2 (ja) 2004-08-12 2004-08-12 レーザ装置
PCT/JP2005/012682 WO2006016459A1 (ja) 2004-08-12 2005-07-08 レーザ装置

Publications (1)

Publication Number Publication Date
DE112005001445T5 true DE112005001445T5 (de) 2007-06-28

Family

ID=35839235

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112005001445T Withdrawn DE112005001445T5 (de) 2004-08-12 2005-07-08 Laservorrichtung

Country Status (4)

Country Link
US (1) US7599414B2 (cg-RX-API-DMAC7.html)
JP (1) JP4167209B2 (cg-RX-API-DMAC7.html)
DE (1) DE112005001445T5 (cg-RX-API-DMAC7.html)
WO (1) WO2006016459A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018210139A1 (de) * 2018-06-21 2019-12-24 Trumpf Photonics, Inc. Diodenlaseranordnung und DWM-Modul mit einer solchen Diodenlaseranordnung

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009040834B4 (de) * 2009-09-09 2013-10-31 Jenoptik Laser Gmbh Vorrichtung zum Schutz eines kantenemittierenden Laserdiodenelementes
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
JP2014127543A (ja) * 2012-12-26 2014-07-07 Sony Corp 冷却装置および半導体レーザ装置
JP5764152B2 (ja) * 2013-02-13 2015-08-12 株式会社フジクラ 半導体レーザ装置
US9762018B2 (en) * 2014-12-09 2017-09-12 Raytheon Company System and method for cooling a laser gain medium using an ultra-thin liquid thermal optical interface
US10211590B2 (en) 2015-11-25 2019-02-19 Raytheon Company Dual-function optical bench and cooling manifold for high-power laser system
US9865988B2 (en) 2015-11-25 2018-01-09 Raytheon Company High-power planar waveguide (PWG) pumphead with modular components for high-power laser system
US10297968B2 (en) 2015-11-25 2019-05-21 Raytheon Company High-gain single planar waveguide (PWG) amplifier laser system
US10056731B2 (en) 2015-11-25 2018-08-21 Raytheon Company Planar waveguide (PWG) amplifier-based laser system with adaptive optic wavefront correction in low-power beam path
US11114813B2 (en) 2015-11-25 2021-09-07 Raytheon Company Integrated pumplight homogenizer and signal injector for high-power laser system
US10069270B2 (en) 2016-02-11 2018-09-04 Raytheon Company Planar waveguides with enhanced support and/or cooling features for high-power laser systems
CN109314363B (zh) * 2016-04-26 2020-09-11 恩耐公司 低尺寸和重量、高功率光纤激光泵
JP6798137B2 (ja) * 2016-04-28 2020-12-09 岩崎電気株式会社 光源ユニット
US10411435B2 (en) 2016-06-06 2019-09-10 Raytheon Company Dual-axis adaptive optic (AO) system for high-power lasers
US11095091B2 (en) * 2016-06-20 2021-08-17 TeraDiode, Inc. Packages for high-power laser devices
WO2019009172A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置
CN109426049B (zh) * 2017-08-21 2021-03-05 深圳光峰科技股份有限公司 液冷循环散热装置、液冷循环散热系统及光学投影系统
US10511135B2 (en) 2017-12-19 2019-12-17 Raytheon Company Laser system with mechanically-robust monolithic fused planar waveguide (PWG) structure
JP6765395B2 (ja) * 2018-06-14 2020-10-07 株式会社フジクラ 光モジュールユニット及びレーザ装置
DE102018210135B4 (de) * 2018-06-21 2023-06-29 Trumpf Photonics, Inc. Diodenlaseranordnung und Verfahren zur Montage einer Diodenlaseranordnung
US11133639B2 (en) 2018-07-24 2021-09-28 Raytheon Company Fast axis thermal lens compensation for a planar amplifier structure
JP7525347B2 (ja) * 2020-09-23 2024-07-30 浜松ホトニクス株式会社 レーザ照射ヘッド及びレーザ照射装置
CN112366512A (zh) * 2020-09-28 2021-02-12 北京凯普林光电科技股份有限公司 一种半导体激光器散热结构
JP2022074322A (ja) * 2020-11-04 2022-05-18 浜松ホトニクス株式会社 半導体レーザ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116138A (ja) * 1994-10-17 1996-05-07 Mitsubishi Heavy Ind Ltd 半導体レーザ素子の冷却装置
JP3816194B2 (ja) 1996-11-22 2006-08-30 ファナック株式会社 冷却装置、光源装置、面発光装置、およびその製造方法
JP2001111176A (ja) * 1999-10-07 2001-04-20 Hamamatsu Photonics Kk 半導体レーザ装置
JP4068887B2 (ja) * 2002-04-26 2008-03-26 浜松ホトニクス株式会社 半導体レーザ装置及びその冷却方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018210139A1 (de) * 2018-06-21 2019-12-24 Trumpf Photonics, Inc. Diodenlaseranordnung und DWM-Modul mit einer solchen Diodenlaseranordnung
DE102018210139B4 (de) * 2018-06-21 2021-02-18 Trumpf Photonics, Inc. Diodenlaseranordnung und DWM-Modul mit einer solchen Diodenlaseranordnung
US11791605B2 (en) 2018-06-21 2023-10-17 Trumpf Photonics, Inc Diode laser assembly and DWM module having a diode laser assembly of this type

Also Published As

Publication number Publication date
US7599414B2 (en) 2009-10-06
JP2006054345A (ja) 2006-02-23
JP4167209B2 (ja) 2008-10-15
US20080095204A1 (en) 2008-04-24
WO2006016459A1 (ja) 2006-02-16

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Legal Events

Date Code Title Description
R005 Application deemed withdrawn due to failure to request examination

Effective date: 20120710