DE1118887B - Process for the production of selenium dry rectifiers - Google Patents
Process for the production of selenium dry rectifiersInfo
- Publication number
- DE1118887B DE1118887B DEL32957A DEL0032957A DE1118887B DE 1118887 B DE1118887 B DE 1118887B DE L32957 A DEL32957 A DE L32957A DE L0032957 A DEL0032957 A DE L0032957A DE 1118887 B DE1118887 B DE 1118887B
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- intermediate layer
- nickel
- following
- electrolysis bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 32
- 229910052711 selenium Inorganic materials 0.000 title claims description 32
- 239000011669 selenium Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- QHASIAZYSXZCGO-UHFFFAOYSA-N selanylidenenickel Chemical compound [Se]=[Ni] QHASIAZYSXZCGO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims description 10
- 238000005868 electrolysis reaction Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 3
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims 1
- 235000011130 ammonium sulphate Nutrition 0.000 claims 1
- 150000002815 nickel Chemical class 0.000 claims 1
- 239000002244 precipitate Substances 0.000 claims 1
- 229940065287 selenium compound Drugs 0.000 claims 1
- 150000003343 selenium compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 23
- 239000000203 mixture Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000080590 Niso Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- DAPUDVOJPZKTSI-UHFFFAOYSA-L ammonium nickel sulfate Chemical compound [NH4+].[NH4+].[Ni+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DAPUDVOJPZKTSI-UHFFFAOYSA-L 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Thermistors And Varistors (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
L 32957 Vmc/21gL 32957 Vmc / 21g
BEKANNTMACHUNG DER ANMELDUNG UND AUSGABE DER AUSLEGESCHRIFT: 7. DEZEMBER 1961NOTICE THE REGISTRATION AND ISSUE OF THE EDITORIAL: DECEMBER 7, 1961
Die Erfindung betrifft ein Verfahren zur Herstellung von Selentrockengleichrichtern mit einer Zwischenschicht aus Nickelselenid zwischen Trägerelektrode und Selenschicht.The invention relates to a method for producing dry selenium rectifiers with an intermediate layer made of nickel selenide between the carrier electrode and selenium layer.
Bei einem bekannten Herstellungsverfahren für Selentrockengleichrichter wird auf eine Trägerelektrode aus Nickel eine Selenschicht bei etwa 300° C aufgeschmolzen, die nach Abkühlung durch eine Wärmebehandlung kristallisiert und mit einer Gegenelektrode versehen wird. Nach einem anderen Verfahren wird auf einer Trägerelektrode aus nickelplattiertem Stahl eine Nickelselenidschicht gebildet, indem die Trägerelektrode zusammen mit Selen bei 400 bis 8000C erhitzt wird. Auf die mit der Nickelselenidschicht versehene Trägerelektrode wird nun eine Selenschicht aufgebracht. Des weiteren ist bekannt, eine Trägerelektrode aus nickelplattiertem Stahl galvanisch mit einer Selenschicht zu versehen und hierbei als Elektrolyt eine wäßrige bzw. eine mit einer starken Säure versetzte Lösung von Selendioxyd zu ver- ao wenden. Zwischen Trägerelektrode und Selenschicht wird dann eine Nickelselenidschicht in wesentlicher Stärke durch eine Wärmebehandlung gebildet.In a known manufacturing process for dry selenium rectifiers, a layer of selenium is melted onto a support electrode made of nickel at about 300 ° C., which, after cooling, is crystallized by a heat treatment and provided with a counter electrode. According to another method, a Nickelselenidschicht is formed on a carrier electrode of nickel-plated steel by the supporting electrode is heated together with selenium at 400 to 800 0 C. A layer of selenium is then applied to the carrier electrode provided with the nickel selenide layer. It is also known to galvanically provide a support electrode made of nickel-plated steel with a layer of selenium and to use an aqueous solution of selenium dioxide or a solution of selenium dioxide mixed with a strong acid as the electrolyte. A nickel selenide layer of substantial thickness is then formed between the carrier electrode and the selenium layer by means of a heat treatment.
Das bekannte Aufschmelzen von Selen auf eine Trägerelektrode aus Nickel oder einem nickelüberzogenen Metall führt zu Selentrockengleichrichtern, welche an der Trägerelektrodenseite der Selenschicht eine Übergangsschicht aufweisen, die in Richtung von der Trägerelektrode zur Selenschicht hin in ihrer stöchiometrischen Zusammensetzung uneinheitlich ist und einen hohen Übergangswiderstand ergibt.The well-known melting of selenium onto a carrier electrode made of nickel or a nickel-coated one Metal leads to selenium dry rectifiers, which are located on the carrier electrode side of the selenium layer have a transition layer in the direction from the carrier electrode to the selenium layer in their stoichiometric composition is inconsistent and results in a high contact resistance.
Die Nickelselenidschicht, die durch Erhitzung einer nickelplattierten und mit einer Selenschicht versehenen Trägerelektrode gebildet wird, ist in ihrer Randzone auf der Trägerelektrodenseite gegenüber der stöchiometrischen Zusammensetzung an Nickel angereichert und in ihrer Randzone auf der von der Trägerelektrode abgewandten Seite an Nickel verarmt, da die Umsetzung des Selens mit Nickel durch die Diffusion der beiden Stoffe bzw. deren Reaktionsprodukte ineinander bestimmt wird. Neben der unerwünschten Bildung von Randzonen gestörter stöchiometrischer Zusammensetzung besitzt dieses Verfahren zur Bildung einer Nickelselenidzwischenschicht besonders den Nachteil, daß der Verlauf der Zusammensetzung der Nickelselenidschicht von der Trägerelektrodenseite zur Selenschicht hin sehr schwer reproduzierbar ist. Dadurch werden in der Fabrikation von Selentrockengleichrichtern erhebliche Schwankungen des Übergangswiderstandes zwischen Trägerelektrode und Selenschicht verursacht.The nickel selenide layer, which is made by heating a nickel-plated and provided with a selenium layer Support electrode is formed is in its edge zone on the support electrode side opposite the Stoichiometric composition enriched in nickel and in their edge zone on the of the Carrier electrode facing away from nickel depleted because the conversion of selenium with nickel through the diffusion of the two substances or their reaction products into one another is determined. In addition to the undesirable This process possesses the formation of edge zones of disturbed stoichiometric composition to form a nickel selenide intermediate layer has the particular disadvantage that the course of the composition the nickel selenide layer from the carrier electrode side to the selenium layer is very heavy is reproducible. This becomes significant in the manufacture of dry selenium rectifiers Fluctuations in the contact resistance between the carrier electrode and selenium layer caused.
Gemäß der Erfindung wird zur Herstellung von Verfahren zur Herstellung
von SelentrockengleichrichternAccording to the invention for the production of Methods of Production
of selenium dry rectifiers
Anmelder:Applicant:
Licentia Patent-Verwaltungs -G. m. b. H.,
Frankfurt/M., Theodor-Stern-Kai 1Licentia Patent-Verwaltungs -G. mb H.,
Frankfurt / M., Theodor-Stern-Kai 1
Dr.-Ing. Wolfgang Nestler, Belecke/Möhne,.
ist als Erfinder genannt wordenDr.-Ing. Wolfgang Nestler, Belecke / Möhne ,.
has been named as the inventor
Selentrockengleichrichtern so verfahren, daß auf die Trägerelektrode eine Nickelselenidzwischenschicht durch gleichzeitige galvanische Abscheidung von Nickel und Selen aufgebracht wird.Proceed with selenium dry rectifiers that the Carrier electrode a nickel selenide intermediate layer by simultaneous galvanic deposition of Nickel and selenium is applied.
Das Verfahren nach der Erfindung ermöglicht die Herstellung von Selentrockengleichrichtern mit einer Nickelselenidzwischenschicht von größerer Gleichmäßigkeit hinsichtlich der stöchiometrischen Zusammensetzung in Richtung von der Trägerelektrode zu der Selenschicht hin. Selentrockengleichrichter mit einer so hergestellten Zwischenschicht besitzen einen geringeren Übergangswiderstand zwischen Trägerelektrode und Selenschicht als die bisher bekannten Gleichrichter. Außerdem kann die Herstellung mit wesentlicher verbesserter Reproduzierbarkeit des Übergangswiderstandes erfolgen. Ein besonderer Vorzug des Verfahrens gemäß der Erfindung ist außerdem darin zu sehen, daß ein besonderer Arbeitsgang für die Vernickelung der Trägerelektrode vermieden werden kann.The method according to the invention enables the production of selenium dry rectifiers with a Nickel selenide interlayer of greater uniformity in terms of stoichiometric composition in the direction from the support electrode to the selenium layer. Selenium dry rectifier with an intermediate layer produced in this way have a lower contact resistance between the carrier electrode and selenium layer than the previously known rectifiers. In addition, the production can be done with significantly improved reproducibility of the transition resistance. A special advantage the method according to the invention can also be seen in that a special operation for the nickel-plating of the carrier electrode can be avoided.
Die Selentrockengleichrichter können z. B. in der folgenden Weise hergestellt werden.The selenium dry rectifier can, for. B. can be prepared in the following manner.
Ein Aluminiumblech, das zur Verwendung als Trägerelektrode für Selentrockengleichrichter vorgesehen ist, wird in bekannter Weise durch Sandstrahlen oder andere mechanisch wirkende Mittel aufgerauht. Es wird anschließend in ein Elektrolysebad eingehängt, das zweckmäßig eine Zusammensetzung von etwa 1001 Wasser, etwa 2500 bis 3000 g Selendioxyd [SiO2], etwa 1500 g Nickelammonsulfat [Ni S O4 · (N H4)2 S O4 · 6 H2 O] und etwa 300 g Nickelsulfat [NiSO4] hat. Das Aluminiumblech wird als Kathode geschaltet, während die Anode aus Nickelplatten besteht. Das Elektrolysebad wird mitAn aluminum sheet, which is provided for use as a carrier electrode for selenium dry rectifiers, is roughened in a known manner by sandblasting or other mechanically acting means. It is then suspended in an electrolytic bath, which expediently has a composition of about 100 liters of water, about 2500 to 3000 g of selenium dioxide [SiO 2 ], about 1500 g of nickel ammonium sulfate [Ni SO 4 · (NH 4 ) 2 SO 4 · 6 H 2 O] and about 300 g of nickel sulfate [NiSO 4 ]. The aluminum sheet is connected as the cathode, while the anode consists of nickel plates. The electrolysis bath is with
109 748/376109 748/376
Ammoniak auf einen pH-Wert zwischen etwa.2,5 und etwa 3,5 eingestellt. Eine Badtemperatur zwischen etwa 55 bis etwa 70° C ist günstig. Die galvanische Abscheidung kann vorteilhaft bei einer Stromdichte größer als etwa 1,5 Amp/(dm)2 vorgenommen werden. Zur Durchmischung des Elektrolysebades kann es laufend umgepumpt werden.Ammonia adjusted to a pH value between about 3.5 and etwa.2,5. A bath temperature between about 55 to about 70 ° C is favorable. The galvanic deposition can advantageously be carried out at a current density greater than approximately 1.5 Amp / (dm) 2 . To mix the electrolysis bath, it can be continuously pumped around.
Ein etwa an der Kathode sich bildender flockiger, weißer Belag läßt sich. durch hartes Anstoßen des Aluminiumbleches in der Ebene des Bleches ablösen. Hierdurch kann eine etwaige Beeinträchtigung der Gleichmäßigkeit der Niekel-Selen-Abscheidung leicht vermieden werden.A flaky, white coating that forms on the cathode, for example, can be removed. by hitting the Detach the aluminum sheet in the plane of the sheet. This can impair the Uniformity of the Niekel selenium separation can easily be avoided.
Bei der Verwendung eines einmal angesetzten elektrolytischen Bades für eine größere Reihe von zu behandelnden Aluminiumblechen ist das Bad von Zeit zu Zeit durch Zusatz von Selendioxyd in seiner Zusammensetzung zu korrigieren, während der Nickelverbrauch durch von der Anode in Lösung gehendes Nickel ausgeglichen wird. aoWhen using an electrolytic bath once set up for a larger number of too treated aluminum sheets is the bath from time to time by adding selenium dioxide to its composition to correct while the nickel consumption by going into solution from the anode Nickel is balanced. ao
Nach der Elektrolyse wird das Aluminiumblech mit Wasser gespült und mit warmer Luft getrocknet.After the electrolysis, the aluminum sheet is rinsed with water and dried with warm air.
Anschließend kann die mit dem Nickelselenidniederschlag versehene Trägerelektrode während etwa 4 bis etwa 7 Minuten in einem Ofen bei einer Temperatur von etwa 260 bis etwa 280° C erhitzt werden.The carrier electrode provided with the nickel selenide deposit can then be used for about Heat in an oven at a temperature of about 260 to about 280 ° C for 4 to about 7 minutes.
Auf die mit der Nickelselenidzwischenschicht versehene Trägerelektrode wird nach bekannten Verfahren die Selenschicht aufgebracht und diese dann mit einer Gegenelektrode versehen.Known methods are used to apply to the carrier electrode provided with the nickel selenide intermediate layer the selenium layer is applied and this is then provided with a counter electrode.
Claims (9)
Deutsche Patentschriften Nr. 887 847, 968 966;
USA.-Patentschrift Nr. 2468 131;
französische Patentschrift Nr. 966 437.Considered publications:
German Patent Nos. 887 847, 968 966;
U.S. Patent No. 2,468,131;
French patent specification No. 966 437.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL32957A DE1118887B (en) | 1959-04-13 | 1959-04-13 | Process for the production of selenium dry rectifiers |
| CH374060A CH387802A (en) | 1959-04-13 | 1960-04-02 | Process for the production of selenium dry rectifiers |
| GB12561/60A GB872973A (en) | 1959-04-13 | 1960-04-08 | A method of manufacturing selenium rectifiers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL32957A DE1118887B (en) | 1959-04-13 | 1959-04-13 | Process for the production of selenium dry rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1118887B true DE1118887B (en) | 1961-12-07 |
Family
ID=7266107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL32957A Pending DE1118887B (en) | 1959-04-13 | 1959-04-13 | Process for the production of selenium dry rectifiers |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH387802A (en) |
| DE (1) | DE1118887B (en) |
| GB (1) | GB872973A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1276214B (en) * | 1965-03-15 | 1968-08-29 | Licentia Gmbh | Method of manufacturing a selenium rectifier plate |
| US6778749B2 (en) | 2001-03-20 | 2004-08-17 | Corning Incorporated | Optimized defects in band-gap waveguides |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400244A (en) * | 1976-06-08 | 1983-08-23 | Monosolar, Inc. | Photo-voltaic power generating means and methods |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2468131A (en) * | 1945-05-12 | 1949-04-26 | Standard Telephones Cables Ltd | Method of manufacturing rectifier elements |
| FR966437A (en) * | 1947-03-01 | 1950-10-10 | Int Standard Electric Corp | Manufacturing process of electric current rectifiers and products obtained by this process |
| DE887847C (en) * | 1948-10-02 | 1953-08-27 | Siemens Ag | Method for improving the blocking resistance of selenium rectifiers |
| DE968966C (en) * | 1949-05-30 | 1958-04-10 | Siemens Ag | Dry rectifier, in particular selenium rectifier, and method for its manufacture |
-
1959
- 1959-04-13 DE DEL32957A patent/DE1118887B/en active Pending
-
1960
- 1960-04-02 CH CH374060A patent/CH387802A/en unknown
- 1960-04-08 GB GB12561/60A patent/GB872973A/en not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2468131A (en) * | 1945-05-12 | 1949-04-26 | Standard Telephones Cables Ltd | Method of manufacturing rectifier elements |
| FR966437A (en) * | 1947-03-01 | 1950-10-10 | Int Standard Electric Corp | Manufacturing process of electric current rectifiers and products obtained by this process |
| DE887847C (en) * | 1948-10-02 | 1953-08-27 | Siemens Ag | Method for improving the blocking resistance of selenium rectifiers |
| DE968966C (en) * | 1949-05-30 | 1958-04-10 | Siemens Ag | Dry rectifier, in particular selenium rectifier, and method for its manufacture |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1276214B (en) * | 1965-03-15 | 1968-08-29 | Licentia Gmbh | Method of manufacturing a selenium rectifier plate |
| US6778749B2 (en) | 2001-03-20 | 2004-08-17 | Corning Incorporated | Optimized defects in band-gap waveguides |
| US6819852B2 (en) | 2001-03-20 | 2004-11-16 | Corning Incorporated | Optimized defects in band-gap waveguides |
Also Published As
| Publication number | Publication date |
|---|---|
| GB872973A (en) | 1961-07-19 |
| CH387802A (en) | 1965-02-15 |
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