GB872973A - A method of manufacturing selenium rectifiers - Google Patents

A method of manufacturing selenium rectifiers

Info

Publication number
GB872973A
GB872973A GB12561/60A GB1256160A GB872973A GB 872973 A GB872973 A GB 872973A GB 12561/60 A GB12561/60 A GB 12561/60A GB 1256160 A GB1256160 A GB 1256160A GB 872973 A GB872973 A GB 872973A
Authority
GB
United Kingdom
Prior art keywords
selenium
nickel
gms
deposition
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12561/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB872973A publication Critical patent/GB872973A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Abstract

872,973. Semi-conductor devices; electrodeposition. LICENTIA PATENT-VERWALTUNGS-G.m.b.H. April 8, 1960 [April 13, 1959], No. 12561/60. Classes 37 and 41. A method of applying a layer of nickel selenide intermediate the carrier electrode and the selenium layer in a selenium rectifier comprises simultaneous galvanic deposition of nickel and selenium on the carrier electrode preferably followed by a heat treatment. In a preferred embodiment an aluminium carrier electrode is surface roughened, e.g. by sand blasting, and then suspended and connected as the cathode in an electrolytic bath composed of about 100 litre water, 2500 to 3000 gms. selenium dioxide, about 1500 gms. nickel ammonium sulphate and 300 gms. nickel sulphate with a nickel plate as the anode. The bath is set to pH value between 2.5 and 3.5 by means of ammonia and the temperature controlled to between 55‹ and 70‹ C. and the deposition carried out with a current density greater than 1.5 amps/(dm.)<2>. A flocculent white coat which forms on the cathode is removed by periodically striking the aluminium plate in the direction of the plane of the sheet. After the deposition the sheet is rinsed in water and dried in hot air and then preferably heated for from 4 to 7 minutes at a temperature of between 260‹ and 280‹ C. before applying the selenium layer and the counter electrode. The strength of the electrolytic bath may be maintained for continuous treatment of carrier electrodes by the addition of selenium dioxide as the selenium is deposited, the consumption of nickel being equalized by dissolution of the anode.
GB12561/60A 1959-04-13 1960-04-08 A method of manufacturing selenium rectifiers Expired GB872973A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL32957A DE1118887B (en) 1959-04-13 1959-04-13 Process for the production of selenium dry rectifiers

Publications (1)

Publication Number Publication Date
GB872973A true GB872973A (en) 1961-07-19

Family

ID=7266107

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12561/60A Expired GB872973A (en) 1959-04-13 1960-04-08 A method of manufacturing selenium rectifiers

Country Status (3)

Country Link
CH (1) CH387802A (en)
DE (1) DE1118887B (en)
GB (1) GB872973A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1276214B (en) * 1965-03-15 1968-08-29 Licentia Gmbh Method of manufacturing a selenium rectifier plate
US6778749B2 (en) 2001-03-20 2004-08-17 Corning Incorporated Optimized defects in band-gap waveguides

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE474674A (en) * 1945-05-12
US2568780A (en) * 1947-03-01 1951-09-25 Standard Telephones Cables Ltd Rectifier manufacturing process and products obtained thereby
DE887847C (en) * 1948-10-02 1953-08-27 Siemens Ag Method for improving the blocking resistance of selenium rectifiers
NL153851B (en) * 1949-05-30 Lonza Ag PROCESS FOR THE PREPARATION OF METHACRYLIC ACID FROM ALPHA-HYDROXYISOBUTIC ACID.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods

Also Published As

Publication number Publication date
DE1118887B (en) 1961-12-07
CH387802A (en) 1965-02-15

Similar Documents

Publication Publication Date Title
US3669856A (en) Process for the production of colored protective coatings on articles of aluminum or aluminum alloys
US4159231A (en) Method of producing a lead dioxide coated cathode
CN103361701A (en) Rose red aluminum profile and electrolytic coloring method thereof
US3901771A (en) One-side electrocoating
US3970537A (en) Electrolytic treating apparatus
GB1311972A (en) Electrochemical colouring of aluminium
GB872973A (en) A method of manufacturing selenium rectifiers
CN101629311A (en) Trivalent chromeplating process and plating solution thereof
CN85103365A (en) The aluminum or aluminum alloy method to produce white film on surface
US3296100A (en) Process for producing anticorrosive surface treated steel sheets and product thereof
CN103898563B (en) Magnesium lithium alloy method for electroplating nickel on surface
GB617689A (en) Improvements relating to the electro deposition of nickel on nickel
CN103361700A (en) Electrolytic coloring method for aluminum sections
GB1000721A (en) Improvements in or relating to the electrolytic deposition on a workpiece
GB892400A (en) Manufacture of selenium rectifier cell
GB785189A (en) Improvements in or relating to method and apparatus for electrodeposition
SU116447A1 (en) The method of applying copper coatings by electrolysis of non-cyanic electrolytes
SU125454A1 (en) Electrolyte for copperless copper
CN104894625A (en) Electroplating method for improving uniformity of cadmium plating of complex workpieces
JPH01222091A (en) Formation of electrically conductive coating film on aluminum or aluminum alloy member
GB1189183A (en) Applying Lead Dioxide Coatings to Metallic Titanium by Anodic Deposition
GB1154023A (en) Improvements in and relating to Processes for Coating Ferrous Members
JPS604919B2 (en) Electrodeposition method of beryllium or aluminum hydroxide or hydrate
GB700535A (en) Improvements relating to electro-plating, more particularly of ferrous-metal surfaces
GB738236A (en) Improvements in the deposition of chromium on antimony or antimony alloy surfaces