DE1102809B - Informationsspeicher mit supraleitfaehigen bistabilen Elementen - Google Patents
Informationsspeicher mit supraleitfaehigen bistabilen ElementenInfo
- Publication number
- DE1102809B DE1102809B DER27213A DER0027213A DE1102809B DE 1102809 B DE1102809 B DE 1102809B DE R27213 A DER27213 A DE R27213A DE R0027213 A DER0027213 A DE R0027213A DE 1102809 B DE1102809 B DE 1102809B
- Authority
- DE
- Germany
- Prior art keywords
- row
- holes
- sheet
- memory according
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims description 22
- 239000004020 conductor Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000004804 winding Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79491559A | 1959-02-24 | 1959-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1102809B true DE1102809B (de) | 1961-03-23 |
Family
ID=25164073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DER27213A Pending DE1102809B (de) | 1959-02-24 | 1960-01-30 | Informationsspeicher mit supraleitfaehigen bistabilen Elementen |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE587841A (enrdf_load_stackoverflow) |
| DE (1) | DE1102809B (enrdf_load_stackoverflow) |
| FR (1) | FR1247274A (enrdf_load_stackoverflow) |
| GB (1) | GB942801A (enrdf_load_stackoverflow) |
| NL (1) | NL248701A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1269664B (de) * | 1963-09-30 | 1968-06-06 | Siemens Ag | Supraleitendes Schalt- oder Speicherelement |
| DE1295022B (de) * | 1964-04-03 | 1969-05-14 | Ibm | Kryotronspeicher |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3238512A (en) * | 1962-01-18 | 1966-03-01 | Rca Corp | Dual element superconductive memory |
-
0
- NL NL248701D patent/NL248701A/xx unknown
-
1960
- 1960-01-28 GB GB3145/60A patent/GB942801A/en not_active Expired
- 1960-01-30 DE DER27213A patent/DE1102809B/de active Pending
- 1960-02-08 FR FR817850A patent/FR1247274A/fr not_active Expired
- 1960-02-19 BE BE587841A patent/BE587841A/fr unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1269664B (de) * | 1963-09-30 | 1968-06-06 | Siemens Ag | Supraleitendes Schalt- oder Speicherelement |
| DE1295022B (de) * | 1964-04-03 | 1969-05-14 | Ibm | Kryotronspeicher |
Also Published As
| Publication number | Publication date |
|---|---|
| NL248701A (enrdf_load_stackoverflow) | |
| GB942801A (en) | 1963-11-27 |
| FR1247274A (fr) | 1960-11-25 |
| BE587841A (fr) | 1960-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2557621C2 (de) | Elektronisches Prüfsystem | |
| DE2049658C3 (de) | Elektronisches Speicherelement | |
| DE1934278C3 (de) | Speicheranordnung mit zugehörigen Decodierschaltungen | |
| DE1954939B2 (de) | Speicheranordnung mit einer elektrischen Speichermatrix · | |
| DE1174359B (de) | Bistabile Kippschaltung, die eine Flaeche aus einem duennen, anisotropen, ferromagnetischen Film benutzt | |
| DE19823826A1 (de) | MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher | |
| EP0019715A1 (de) | Supraleitfähige Schalt- und Speichervorrichtung | |
| DE1524900A1 (de) | Bistabile Schaltungsanordnung mit zwei Transistoren | |
| DE1102809B (de) | Informationsspeicher mit supraleitfaehigen bistabilen Elementen | |
| DD144325A5 (de) | Magnetblasenspeicher | |
| DE1186509B (de) | Magnetspeicher mit einem mit zueinander senkrechten Bohrungen versehenen Magnetkern | |
| DE2223245C3 (de) | Informationsspeicher | |
| DE10342359A1 (de) | MRAM mit zwei Schreibleitern | |
| DE1088262B (de) | Schaltmatrix nach Art eines Kreuzschienenverteilers | |
| DE1162604B (de) | Bei tiefen Temperaturen arbeitende Speicheranordnung | |
| DE1257203B (de) | Aus duennen magnetischen Schichten bestehendes Speicherelement | |
| DE1499853A1 (de) | Cryoelektrischer Speicher | |
| DE2550214C2 (de) | Blasendomänen-Speicheranordnung | |
| DE2613785C2 (de) | Magnetischer Blasendomänenspeicher | |
| DE1955364C3 (de) | Dreidimensionales Speichersystem | |
| DE1151960B (de) | Vorrichtung zur Speicherung binaerer Informationen | |
| DE1574759B2 (de) | Magnetkernspeicher mit gemeinsamer Schreib- und Leseleitung | |
| DE1474462B2 (de) | Kryoelektriecher Speicher | |
| DE1424408A1 (de) | Speichermatrix mit supraleitenden Schaltelementen | |
| DE1574759C (de) | Magnetkernspeicher mit gemeinsamer Schreib und Leseleitung |