DE1092131B - Transistor und Verfahren zu dessen Herstellung - Google Patents
Transistor und Verfahren zu dessen HerstellungInfo
- Publication number
- DE1092131B DE1092131B DEN14032A DEN0014032A DE1092131B DE 1092131 B DE1092131 B DE 1092131B DE N14032 A DEN14032 A DE N14032A DE N0014032 A DEN0014032 A DE N0014032A DE 1092131 B DE1092131 B DE 1092131B
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- collector
- contact electrode
- transistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims description 98
- 239000004065 semiconductor Substances 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 230000007423 decrease Effects 0.000 claims description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- 230000005855 radiation Effects 0.000 claims description 18
- 238000000866 electrolytic etching Methods 0.000 claims description 17
- 239000000243 solution Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- 235000019441 ethanol Nutrition 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000013016 damping Methods 0.000 claims description 3
- 238000007667 floating Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 230000000694 effects Effects 0.000 description 15
- 239000002800 charge carrier Substances 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000035515 penetration Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 235000011447 Geum Nutrition 0.000 description 1
- 241000220313 Geum Species 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 230000000391 smoking effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L5/00—Automatic control of voltage, current, or power
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Pulse Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL210117 | 1956-08-24 | ||
| NL218102 | 1957-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1092131B true DE1092131B (de) | 1960-11-03 |
Family
ID=26641607
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN14032A Pending DE1092131B (de) | 1956-08-24 | 1957-08-20 | Transistor und Verfahren zu dessen Herstellung |
| DEN15193A Pending DE1136371B (de) | 1956-08-24 | 1958-06-10 | Elektronische Speicherschaltung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN15193A Pending DE1136371B (de) | 1956-08-24 | 1958-06-10 | Elektronische Speicherschaltung |
Country Status (7)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1191493B (de) * | 1961-11-25 | 1965-04-22 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements mit einer durch eine einen geschlossenen Linienzug bildende Vertiefung in zwei Teile geteilten Zone |
| DE1209661B (de) * | 1963-03-13 | 1966-01-27 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelements mit einer flaechenhaften Legierungselektrode |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1137140B (de) * | 1959-04-06 | 1962-09-27 | Int Standard Electric Corp | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung |
| US3197839A (en) * | 1959-12-11 | 1965-08-03 | Gen Electric | Method of fabricating semiconductor devices |
| NL121714C (US06811534-20041102-M00003.png) * | 1959-12-14 | |||
| US3192141A (en) * | 1959-12-24 | 1965-06-29 | Western Electric Co | Simultaneous etching and monitoring of semiconductor bodies |
| DE1211336B (de) * | 1960-02-12 | 1966-02-24 | Shindengen Electric Mfg | Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand |
| DE1171537B (de) * | 1960-04-02 | 1964-06-04 | Telefunken Patent | Verfahren zur Herstellung einer Halbleiterdiode |
| NL265468A (US06811534-20041102-M00003.png) * | 1960-05-18 | |||
| US3196094A (en) * | 1960-06-13 | 1965-07-20 | Ibm | Method of automatically etching an esaki diode |
| US3168649A (en) * | 1960-08-05 | 1965-02-02 | Bell Telephone Labor Inc | Shift register employing bistable multiregion semiconductive devices |
| US3163568A (en) * | 1961-02-15 | 1964-12-29 | Sylvania Electric Prod | Method of treating semiconductor devices |
| US3181983A (en) * | 1961-03-06 | 1965-05-04 | Sperry Rand Corp | Method for controlling the characteristic of a tunnel diode |
| US3211911A (en) * | 1962-09-11 | 1965-10-12 | Justin M Ruhge | Method and photocell device for obtaining light source position data |
| US3349252A (en) * | 1964-03-16 | 1967-10-24 | Automatic Elect Lab | Minority carrier storage flip-flop |
| DE1439442A1 (de) * | 1964-09-12 | 1968-12-05 | Siemens Ag | Halbleiterstromtor vom pnpn-Typ |
| DE1496870A1 (de) * | 1964-10-01 | 1970-01-08 | Hitachi Ltd | Verfahren zur Herstellung einer Halbleiteranordnung |
| US3443102A (en) * | 1964-10-28 | 1969-05-06 | Electro Optical Systems Inc | Semiconductor photocell detector with variable spectral response |
| US3418226A (en) * | 1965-05-18 | 1968-12-24 | Ibm | Method of electrolytically etching a semiconductor having a single impurity gradient |
| US3430109A (en) * | 1965-09-28 | 1969-02-25 | Chou H Li | Solid-state device with differentially expanded junction surface |
| NL6607800A (US06811534-20041102-M00003.png) * | 1966-06-04 | 1967-12-05 | ||
| US3408275A (en) * | 1966-12-09 | 1968-10-29 | Siemens Ag | Tunnel diodes wherein the height of the reduced cross section of the mesa is minimized and process of making |
| DE2332144C3 (de) * | 1973-06-25 | 1981-06-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Transistor und Verfahren zu seiner Herstellung |
| NL8700370A (nl) * | 1987-02-16 | 1988-09-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
| US20040144999A1 (en) * | 1995-06-07 | 2004-07-29 | Li Chou H. | Integrated circuit device |
| US20100276733A1 (en) * | 2000-09-27 | 2010-11-04 | Li Choa H | Solid-state circuit device |
| US7118942B1 (en) | 2000-09-27 | 2006-10-10 | Li Chou H | Method of making atomic integrated circuit device |
| US9062197B2 (en) | 2009-03-27 | 2015-06-23 | Eastman Chemical Company | Polyester blends |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE520597A (US06811534-20041102-M00003.png) * | 1952-06-13 | |||
| BE520677A (US06811534-20041102-M00003.png) * | 1950-09-29 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB763734A (en) * | 1953-12-03 | 1956-12-19 | Standard Telephones Cables Ltd | Improvements in or relating to electrical circuits employing transistors |
| US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
| NL222686A (US06811534-20041102-M00003.png) * | 1950-11-28 | |||
| BE511293A (US06811534-20041102-M00003.png) * | 1951-08-24 | |||
| US2644896A (en) * | 1952-07-29 | 1953-07-07 | Rca Corp | Transistor bistable circuit |
| US2764642A (en) * | 1952-10-31 | 1956-09-25 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| BE525428A (US06811534-20041102-M00003.png) * | 1952-12-30 | |||
| US2790034A (en) * | 1953-03-05 | 1957-04-23 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
| US2792539A (en) * | 1953-07-07 | 1957-05-14 | Sprague Electric Co | Transistor construction |
| US2907934A (en) * | 1953-08-12 | 1959-10-06 | Gen Electric | Non-linear resistance device |
| US2802159A (en) * | 1953-10-20 | 1957-08-06 | Hughes Aircraft Co | Junction-type semiconductor devices |
| NL187666B (nl) * | 1954-05-18 | Blum Gmbh Julius | Telescopische uittrekgeleiding voor schuifladen of dergelijke. | |
| US2805347A (en) * | 1954-05-27 | 1957-09-03 | Bell Telephone Labor Inc | Semiconductive devices |
| US2820153A (en) * | 1954-10-25 | 1958-01-14 | Rca Corp | Electronic counter systems |
| US2885609A (en) * | 1955-01-31 | 1959-05-05 | Philco Corp | Semiconductive device and method for the fabrication thereof |
| US2757439A (en) * | 1955-02-25 | 1956-08-07 | Raytheon Mfg Co | Transistor assemblies |
| BE546329A (US06811534-20041102-M00003.png) * | 1955-04-20 | |||
| US2941131A (en) * | 1955-05-13 | 1960-06-14 | Philco Corp | Semiconductive apparatus |
| US2842668A (en) * | 1955-05-25 | 1958-07-08 | Ibm | High frequency transistor oscillator |
| US2927222A (en) * | 1955-05-27 | 1960-03-01 | Philco Corp | Polarizing semiconductive apparatus |
| US2779877A (en) * | 1955-06-17 | 1957-01-29 | Sprague Electric Co | Multiple junction transistor unit |
| US2765986A (en) * | 1955-07-11 | 1956-10-09 | Cybertronic Corp Of America | Photo-transistor control system |
| US2862115A (en) * | 1955-07-13 | 1958-11-25 | Bell Telephone Labor Inc | Semiconductor circuit controlling devices |
-
0
- BE BE560244D patent/BE560244A/xx unknown
- NL NL218102D patent/NL218102A/xx unknown
- NL NL106110D patent/NL106110C/xx active
- NL NL210117D patent/NL210117A/xx unknown
-
1957
- 1957-08-20 US US679288A patent/US3081418A/en not_active Expired - Lifetime
- 1957-08-20 DE DEN14032A patent/DE1092131B/de active Pending
- 1957-08-21 GB GB26404/57A patent/GB879649A/en not_active Expired
- 1957-08-22 CH CH4970957A patent/CH365803A/de unknown
- 1957-08-22 FR FR1200738D patent/FR1200738A/fr not_active Expired
-
1958
- 1958-06-10 DE DEN15193A patent/DE1136371B/de active Pending
- 1958-06-11 FR FR767754A patent/FR73723E/fr not_active Expired
- 1958-06-11 GB GB18676/58A patent/GB879651A/en not_active Expired
- 1958-06-12 US US741497A patent/US3047739A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE520677A (US06811534-20041102-M00003.png) * | 1950-09-29 | |||
| BE520597A (US06811534-20041102-M00003.png) * | 1952-06-13 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1191493B (de) * | 1961-11-25 | 1965-04-22 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements mit einer durch eine einen geschlossenen Linienzug bildende Vertiefung in zwei Teile geteilten Zone |
| DE1209661B (de) * | 1963-03-13 | 1966-01-27 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelements mit einer flaechenhaften Legierungselektrode |
Also Published As
| Publication number | Publication date |
|---|---|
| NL210117A (US06811534-20041102-M00003.png) | |
| GB879649A (en) | 1961-10-11 |
| FR1200738A (fr) | 1959-12-23 |
| NL218102A (US06811534-20041102-M00003.png) | |
| DE1136371B (de) | 1962-09-13 |
| US3081418A (en) | 1963-03-12 |
| NL106110C (US06811534-20041102-M00003.png) | |
| BE560244A (US06811534-20041102-M00003.png) | |
| FR73723E (fr) | 1960-09-05 |
| GB879651A (en) | 1961-10-11 |
| US3047739A (en) | 1962-07-31 |
| CH365803A (de) | 1962-11-30 |
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