DE1090331B - Strombegrenzende Halbleiteranordnung, insbesondere Diode, mit einem Halbleiterkoerper mit einer Folge von wenigstens vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps - Google Patents

Strombegrenzende Halbleiteranordnung, insbesondere Diode, mit einem Halbleiterkoerper mit einer Folge von wenigstens vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Info

Publication number
DE1090331B
DE1090331B DEW25639A DEW0025639A DE1090331B DE 1090331 B DE1090331 B DE 1090331B DE W25639 A DEW25639 A DE W25639A DE W0025639 A DEW0025639 A DE W0025639A DE 1090331 B DE1090331 B DE 1090331B
Authority
DE
Germany
Prior art keywords
zone
current
semiconductor body
zones
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW25639A
Other languages
German (de)
English (en)
Inventor
Ian Munro Ross
Friedolf Michael Smits
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1090331B publication Critical patent/DE1090331B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Thyristors (AREA)
DEW25639A 1958-05-26 1959-05-16 Strombegrenzende Halbleiteranordnung, insbesondere Diode, mit einem Halbleiterkoerper mit einer Folge von wenigstens vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps Pending DE1090331B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US737883A US2959504A (en) 1958-05-26 1958-05-26 Semiconductive current limiters

Publications (1)

Publication Number Publication Date
DE1090331B true DE1090331B (de) 1960-10-06

Family

ID=24965687

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW25639A Pending DE1090331B (de) 1958-05-26 1959-05-16 Strombegrenzende Halbleiteranordnung, insbesondere Diode, mit einem Halbleiterkoerper mit einer Folge von wenigstens vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Country Status (7)

Country Link
US (1) US2959504A (en, 2012)
JP (1) JPS374662B1 (en, 2012)
BE (1) BE578696A (en, 2012)
DE (1) DE1090331B (en, 2012)
FR (1) FR1225369A (en, 2012)
GB (1) GB923104A (en, 2012)
NL (1) NL239104A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005023479A1 (de) * 2005-05-20 2006-11-23 Infineon Technologies Ag Thyristor mit Zündstufenstruktur

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
NL264084A (en, 2012) * 1959-06-23
DE1146152B (de) * 1959-07-07 1963-03-28 Philips Patentverwaltung Isolatoranordnung aus Isolationsmaterialien mit bevorzugt elektronischer Leitfaehigkeit, insbesondere fuer elektrische Entladungsroehren
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3195077A (en) * 1960-09-06 1965-07-13 Westinghouse Electric Corp Semiconductor multisection r-c filter of tapered monolithic construction having progressively varied values of impedance per section
US3200017A (en) * 1960-09-26 1965-08-10 Gen Electric Gallium arsenide semiconductor devices
US3220380A (en) * 1961-08-21 1965-11-30 Merck & Co Inc Deposition chamber including heater element enveloped by a quartz workholder
US3237062A (en) * 1961-10-20 1966-02-22 Westinghouse Electric Corp Monolithic semiconductor devices
US3239728A (en) * 1962-07-17 1966-03-08 Gen Electric Semiconductor switch
GB1052447A (en, 2012) * 1962-09-15
NL300210A (en, 2012) * 1962-11-14
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
US3265909A (en) * 1963-09-03 1966-08-09 Gen Electric Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor
US3284680A (en) * 1963-11-26 1966-11-08 Gen Electric Semiconductor switch
US3458781A (en) * 1966-07-18 1969-07-29 Unitrode Corp High-voltage planar semiconductor devices
US3996601A (en) * 1974-07-15 1976-12-07 Hutson Jerald L Shorting structure for multilayer semiconductor switching devices
US4364021A (en) * 1977-10-07 1982-12-14 General Electric Company Low voltage varistor configuration
SE409789B (sv) * 1978-01-10 1979-09-03 Ericsson Telefon Ab L M Overstromsskyddad transistor
FR2737343B1 (fr) * 1995-07-28 1997-10-24 Ferraz Composant limiteur de courant et procede de realisation
DE102014107040A1 (de) * 2014-05-19 2015-11-19 Epcos Ag Elektronisches Bauelement und Verfahren zu dessen Herstellung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (en, 2012) * 1948-06-26
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005023479A1 (de) * 2005-05-20 2006-11-23 Infineon Technologies Ag Thyristor mit Zündstufenstruktur
DE102005023479B4 (de) * 2005-05-20 2011-06-09 Infineon Technologies Ag Thyristor mit Zündstufenstruktur

Also Published As

Publication number Publication date
NL239104A (en, 2012) 1900-01-01
BE578696A (fr) 1959-08-31
FR1225369A (fr) 1960-06-30
GB923104A (en) 1963-04-10
JPS374662B1 (en, 2012) 1962-05-15
US2959504A (en) 1960-11-08

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