DE1086752B - Leistungsverstaerkerstufe mit Doppelbasistransistor in Emitterschaltung - Google Patents

Leistungsverstaerkerstufe mit Doppelbasistransistor in Emitterschaltung

Info

Publication number
DE1086752B
DE1086752B DEM33618A DEM0033618A DE1086752B DE 1086752 B DE1086752 B DE 1086752B DE M33618 A DEM33618 A DE M33618A DE M0033618 A DEM0033618 A DE M0033618A DE 1086752 B DE1086752 B DE 1086752B
Authority
DE
Germany
Prior art keywords
emitter
amplifier stage
transistor
input
power amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEM33618A
Other languages
German (de)
English (en)
Inventor
James F Marshall
Howard T Mooers
Richard J Zelinka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE1086752B publication Critical patent/DE1086752B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DEM33618A 1956-03-21 1957-03-20 Leistungsverstaerkerstufe mit Doppelbasistransistor in Emitterschaltung Pending DE1086752B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1086752XA 1956-03-21 1956-03-21

Publications (1)

Publication Number Publication Date
DE1086752B true DE1086752B (de) 1960-08-11

Family

ID=22323484

Family Applications (1)

Application Number Title Priority Date Filing Date
DEM33618A Pending DE1086752B (de) 1956-03-21 1957-03-20 Leistungsverstaerkerstufe mit Doppelbasistransistor in Emitterschaltung

Country Status (2)

Country Link
BE (1) BE555973A (enrdf_load_stackoverflow)
DE (1) DE1086752B (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1095877A (fr) * 1953-01-19 1955-06-07 Thomson Houston Comp Francaise Perfectionnements aux appareils utilisant des semi-conducteurs
GB739294A (en) * 1952-06-13 1955-10-26 Rca Corp Improvements in semi-conductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB739294A (en) * 1952-06-13 1955-10-26 Rca Corp Improvements in semi-conductor devices
FR1095877A (fr) * 1953-01-19 1955-06-07 Thomson Houston Comp Francaise Perfectionnements aux appareils utilisant des semi-conducteurs

Also Published As

Publication number Publication date
BE555973A (enrdf_load_stackoverflow)

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